公开(公告)号：WO2007001112A1

公开(公告)日：2007-01-04

申请号：PCT/KR2006/001387

申请日：2006-04-14

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： CHEONG, Byung-ki ,  JEONG, Jeung-hyun ,  KANG, Dae-Hwan ,  JUNG, Han Ju ,  LEE, Taek Sung ,  KIM, In Ho ,  KIM, Won Mok ,  LEE, Kyeong Seok

IPC: H01L27/10

CPC classification number: H01L45/1233 ,  C01B19/002 ,  H01L45/06 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1625 ,  Y10T428/21

Abstract: The present invention provides a phase change non-volatile memory material comprising a base material and at least one non-metallic light element selected from the group consisting of boron, carbon, nitrogen and oxygen, wherein the base material has a composition which corresponds to either that of congruent melting of the type with a minimum melting point or that of eutectic melting within the range of ±0.15 atomic fraction for each constituent element, thereby having a melting temperature of 600°C or lower. The phase change non-volatile memory material according to the present invention may be utilized to reduce the electric power needed for reset/set operation and thermal interference between memory cells.

Abstract translation: 本发明提供了一种相变非挥发性记忆材料，其包括基材和至少一种选自硼，碳，氮和氧的非金属光元素，其中所述基材具有对应于 对于每个构成元素，具有最低熔点或共晶熔化的类型的均匀熔融在±0.15原子级的范围内，从而具有600℃或更低的熔融温度。 可以利用根据本发明的相变非易失性存储器材料来降低复位/设置操作所需的电力以及存储单元之间的热干扰。

公开(公告)号：WO2006057541A1

公开(公告)日：2006-06-01

申请号：PCT/KR2005/004039

申请日：2005-11-29

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION

Inventor： CHEONG, Byung-ki ,  JEONG, Jeung-hyun ,  KANG, Dae-Hwan ,  LEE, Taek Sung ,  KIM, In Ho ,  LEE, Kyeong Seok ,  KIM, Won Mok ,  AHN, Dong-Ho ,  KIM, Ki-Bum

IPC: H01L27/115

CPC classification number: H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/144

Abstract: The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based material which has a high electric conductivity, a low thermal conductivity and a good thermal stability. A non-volatile phase change memory cell according to the present invention may be utilized to reduce the electric power needed for reset and set operation.

Abstract translation: 本发明提供了一种非易失性相变存储单元，其包含设置在金属电极层和相变材料层之间的电极接触层，电极接触层由透明导电氧化物基材料形成，该材料具有高导电性 ，导热性低，热稳定性好。 可以使用根据本发明的非易失性相变存储器单元来减少复位和设置操作所需的电力。