公开(公告)号：KR100762258B1

公开(公告)日：2007-10-01

申请号：KR20060039528

申请日：2006-05-02

Applicant: KOREA RES INST OF STANDARDS

Inventor： AH CHIL SEONG ,  YUN YONG JU ,  LEE JUN SUNG ,  PARK HYUNG JU ,  HA DONG HAN ,  YUN WAN SOO

IPC: H01L29/40

CPC classification number: G01R33/1269 ,  Y10T428/12389

Abstract: A method for manufacturing a nano gap electrode and a nano gap device manufactured by using the same are provided to manufacture uniform and reproductive nano gap electrodes by controlling the density and the reactive time of a reaction material. A method for manufacturing a nano gap electrode is characterized by dipping a substrate(1) having metal patterns(2) into a solution containing metal ions. And a reduced metal is grown on a surface of the metal pattern by a reducing agent included in the solution.

Abstract translation: 提供一种制造纳米间隙电极的方法和使用该方法制造的纳米间隙装置，以通过控制反应材料的密度和反应时间来制造均匀的和生殖的纳米间隙电极。 纳米间隙电极的制造方法的特征在于，将具有金属图案（2）的基板（1）浸渍在含有金属离子的溶液中。 并且还原金属通过溶液中包含的还原剂在金属图案的表面上生长。