PROCESS FOR PREPARING NANOGAP ELECTRODE AND NANOGAP DEVICE USING THE SAME
    1.
    发明授权
    PROCESS FOR PREPARING NANOGAP ELECTRODE AND NANOGAP DEVICE USING THE SAME 无效
    用于制备纳米微粒电极的方法和使用其的纳米粒子装置

    公开(公告)号:KR100762258B1

    公开(公告)日:2007-10-01

    申请号:KR20060039528

    申请日:2006-05-02

    CPC classification number: G01R33/1269 Y10T428/12389

    Abstract: A method for manufacturing a nano gap electrode and a nano gap device manufactured by using the same are provided to manufacture uniform and reproductive nano gap electrodes by controlling the density and the reactive time of a reaction material. A method for manufacturing a nano gap electrode is characterized by dipping a substrate(1) having metal patterns(2) into a solution containing metal ions. And a reduced metal is grown on a surface of the metal pattern by a reducing agent included in the solution.

    Abstract translation: 提供一种制造纳米间隙电极的方法和使用该方法制造的纳米间隙装置,以通过控制反应材料的密度和反应时间来制造均匀的和生殖的纳米间隙电极。 纳米间隙电极的制造方法的特征在于,将具有金属图案(2)的基板(1)浸渍在含有金属离子的溶液中。 并且还原金属通过溶液中包含的还原剂在金属图案的表面上生长。

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