公开(公告)号：KR100762258B1

公开(公告)日：2007-10-01

申请号：KR20060039528

申请日：2006-05-02

Applicant: KOREA RES INST OF STANDARDS

Inventor： AH CHIL SEONG ,  YUN YONG JU ,  LEE JUN SUNG ,  PARK HYUNG JU ,  HA DONG HAN ,  YUN WAN SOO

IPC: H01L29/40

CPC classification number: G01R33/1269 ,  Y10T428/12389

Abstract: A method for manufacturing a nano gap electrode and a nano gap device manufactured by using the same are provided to manufacture uniform and reproductive nano gap electrodes by controlling the density and the reactive time of a reaction material. A method for manufacturing a nano gap electrode is characterized by dipping a substrate(1) having metal patterns(2) into a solution containing metal ions. And a reduced metal is grown on a surface of the metal pattern by a reducing agent included in the solution.

Abstract translation: 提供一种制造纳米间隙电极的方法和使用该方法制造的纳米间隙装置，以通过控制反应材料的密度和反应时间来制造均匀的和生殖的纳米间隙电极。 纳米间隙电极的制造方法的特征在于，将具有金属图案（2）的基板（1）浸渍在含有金属离子的溶液中。 并且还原金属通过溶液中包含的还原剂在金属图案的表面上生长。

公开(公告)号：KR100777973B1

公开(公告)日：2007-11-29

申请号：KR20060065828

申请日：2006-07-13

Applicant: KOREA RES INST OF STANDARDS

Inventor： YUN WAN SOO ,  PARK HYUNG JU ,  CHI YOUNG SHIK

IPC: G01N33/53 ,  G01N33/50

CPC classification number: G01N33/5438 ,  C12Q2565/607

Abstract: A bio-sensor is provided to detect the existence and the concentration of various bio-materials such as genes and proteins to be measured efficiently and electrically. A bio-sensor in which a plurality of interdigitated electrode sensor units, each of which is independently operated, is integrated in a substrate comprises a first and a second electrodes formed to be spaced apart from one another with a multi-line shape and a biomolecule receptor fixed on a sensor which is fixed on the substrate exposed between the first and second electrodes and specifically bound to biomolecules, and is characterized in that the biomolecule is analyzed by the number of the multi-line electrode sensor units electrically conducted by conductive particles directly bound to biomolecules captured by the biomolecule receptor or conductive particles bound to the biomolecules via the biomolecule receptor. A method for analyzing biomolecules comprises the steps of: (a) contacting a sample solution including the biomolecules to be measured with the bio-sensor to capture the biomolecules in the sensor-fixed biomolecule receptor fixed on the substrate exposed between the first and second electrodes of the multi-line electrode sensor units independently operated to one another; (b) contacting the biomolecules bound to the sensor-fixed biomolecules receptor with the particle fixed biomolecule receptor in which the conductive particles are fixed to bind the conductive particles to the biomolecules; (c) measuring the electric conductivity of the bio-sensor; and (d) converting the electric conductivity into the concentration of the biomolecules in the sample solution from the relation between the rate of the sensor showing the change of the electric conductivity before and after the sample solution contact and the concentration.

Abstract translation: 提供生物传感器来检测各种生物材料的存在和浓度，例如有效和电气地测量的基因和蛋白质。 一种生物传感器，其中多个独立操作的叉指电极传感器单元集成在基板中，包括形成为彼此间隔开的多线形状的第一和第二电极以及生物分子 受体固定在传感器上，该传感器固定在暴露在第一和第二电极之间并且特异性结合生物分子的基板上，其特征在于通过直接导电颗粒电导电的多线电极传感器单元的数量来分析生物分子 结合生物分子捕获的生物分子或通过生物分子受体结合生物分子的导电颗粒。 用于分析生物分子的方法包括以下步骤：（a）使包含待测量的生物分子的样品溶液与生物传感器接触，以捕获固定在暴露于第一和第二电极之间的衬底上的传感器固定的生物分子受体中的生物分子 的多线电极传感器单元彼此独立操作; （b）将与传感器固定的生物分子受体结合的生物分子与固定有导电颗粒的颗粒固定生物分子受体接触，以将导电颗粒结合到生物分子上; （c）测量生物传感器的电导率; 和（d）从示出溶液接触之前和之后的电导率的变化与浓度之间的关系，将样品溶液中的电导率转换成样品溶液中的生物分子的浓度。

公开(公告)号：DE602005016193D1

公开(公告)日：2009-10-08

申请号：DE602005016193

申请日：2005-06-30

Applicant: KOREA RES INST OF STANDARDS

Inventor： AH CHIL SEONG ,  YUN WAN SOO ,  YUN YONG JU ,  HA DONG HAN

IPC: B22F9/24 ,  B22F1/00

Abstract: The present invention relates to gold nanoparticles which can be produced at low costs with high yields in large amounts by a liquid phase synthesis method and have a controlled size, as well as a synthesis method thereof. The inventive gold nanoparticles consist of gold nanoplates having a polygonal or circular plate structure.

公开(公告)号：AT440690T

公开(公告)日：2009-09-15

申请号：AT05447158

申请日：2005-06-30

Applicant: KOREA RES INST OF STANDARDS

Inventor： AH CHIL SEONG ,  YUN WAN SOO ,  YUN YONG JU ,  HA DONG HAN

IPC: B22F9/24 ,  B22F1/00

Abstract: The present invention relates to gold nanoparticles which can be produced at low costs with high yields in large amounts by a liquid phase synthesis method and have a controlled size, as well as a synthesis method thereof. The inventive gold nanoparticles consist of gold nanoplates having a polygonal or circular plate structure.

公开(公告)号：WO2010110610A2

公开(公告)日：2010-09-30

申请号：PCT/KR2010001839

申请日：2010-03-25

Applicant: KOREA RES INST OF STANDARDS ,  YUN WAN SOO ,  PARK HYUNG JU ,  CHI YOUNG SHIK

Inventor： YUN WAN SOO ,  PARK HYUNG JU ,  CHI YOUNG SHIK

IPC: B82B1/00 ,  B82B3/00

CPC classification number: B82Y10/00 ,  B82Y30/00 ,  H01L29/0665 ,  H01L29/127 ,  H01L29/7613

Abstract: Provided is a nanogap device having metallic nanodots. To be specific, the nanogap device having a plurality of metallic nanodots performed by a heat-treatment process of the device having a large separation distance between electrodes formed by lithographic technology is provided for easy fabrication of a biosensor and a memory device having a superior performance. In particular, the nanogap device can be easily applied to the biosensor that has the high sensitivity in the detection of biomolecules and the suitability of statistical measurement method.

Abstract translation: 提供了具有金属纳米点的纳米间隙装置。 具体而言，提供具有多个金属纳米点的纳米间隙装置，所述纳米间隙装置通过光刻技术形成的电极之间具有大的间隔距离的装置的热处理工艺进行，以便于制造具有优异性能的生物传感器和存储装置 。 特别是，纳米间隙装置可以容易地应用于对生物分子检测具有高灵敏度和统计测量方法的适用性的生物传感器。

公开(公告)号：WO2010024629A3

公开(公告)日：2010-04-29

申请号：PCT/KR2009004852

申请日：2009-08-28

Applicant: KOREA RES INST OF STANDARDS ,  KIM KYUNG JOONG ,  LEE WOO ,  KIM YONG SUNG ,  KIM YOUNG HEON ,  HONG SEUNG HUI ,  YUN WAN SOO ,  KANG SANG WOO

Inventor： KIM KYUNG JOONG ,  LEE WOO ,  KIM YONG SUNG ,  KIM YOUNG HEON ,  HONG SEUNG HUI ,  YUN WAN SOO ,  KANG SANG WOO

IPC: H01L31/042

CPC classification number: H01L31/035218 ,  H01L31/18

Abstract: The present invention provides a semiconductor based photovoltaic device and a manufacturing method thereof. The semiconductor based photovoltaic device is able to absorb light with a wide band wavelength, and has high photoelectric conversion efficiency since it has high electron-hole pair separation efficiency. More specifically, the method for manufacturing the photovoltaic device comprises the steps of: a) forming a thin semiconductor quantum dot film on a p or n-type semiconductor substrate, wherein the thin semiconductor quantum dot film includes semiconductor quantum dots inside a medium at which the same type of impurities as the semiconductor substrate are doped; b) forming a pore array through partial etching, wherein the pore array penetrates the thin semiconductor quantum dot film; c) depositing a semiconductor in which complementary impurities to the semiconductor substrate are doped on the thin semiconductor quantum dot film at which the pore array is formed; and d) forming sequentially a transparent conductive film and an upper electrode on the semiconductor in which the complementary impurities are doped and forming a lower electrode at a lower portion of the semiconductor substrate.

Abstract translation: 本发明提供一种基于半导体的光电器件及其制造方法。 基于半导体的光电器件能够吸收宽带波长的光，并且由于具有高的电子 - 空穴对分离效率，因此光电转换效率高。 更具体地说，制造光伏器件的方法包括以下步骤：a）在p型或n型半导体衬底上形成薄的半导体量子点膜，其中薄的半导体量子点膜包括介质内的半导体量子点， 与半导体衬底掺杂相同类型的杂质; b）通过部分蚀刻形成孔阵列，其中孔阵列穿透薄的半导体量子点膜; c）在其上形成有孔阵列的薄半导体量子点膜上沉积半导体衬底掺杂杂质的半导体; 以及d）在所述半导体上顺序形成透明导电膜和上电极，其中所述互补杂质被掺杂并在所述半导体衬底的下部形成下电极。

公开(公告)号：DE112009002124T5

公开(公告)日：2012-01-26

申请号：DE112009002124

申请日：2009-08-28

Applicant: KOREA RES INST OF STANDARDS

Inventor： KIM KYUNG JOONG ,  LEE WOO ,  KIM YONG SUNG ,  KIM YOUNG HEON ,  HONG SEUNG HUI ,  YUN WAN SOO ,  KANG SANG WOO

IPC: H01L31/18 ,  H01L31/0352

Abstract: Die vorliegende Erfindung stellt eine halbleiterbasierte Photovoltaikvorrichtung und ein Herstellungsverfahren dafür bereit. Die halbleiterbasierte Photovoltaikvorrichtung ist in der Lage, Licht mit einer breitbandigen Wellenlänge zu absorbieren und hat eine hohe photoelektrische Konversionseffizienz, weil sie eine hohe Separationseffizienz für Elektron-Loch-Paare aufweist. Spezieller umfasst das verfahren zur Herstellung der Photovoltaikvorrichtung die Schritte a) Ausbilden einer Halbleiterquantenpunktdünnschicht auf einem Halbleitersubstrat vom p- oder n-Typ, wobei die Halbleiterquantenpunktdünnschicht innerhalb eines Mediums, bei welchem derselbe Typ von Störstellen wie das Halbleitersubstrat dotiert sind, Halbleiterquantenpunkte beinhaltet; b) Ausbilden einer Porenanordnung durch Teilätzung, wobei die Porenanordnung die Halbleiterquantenpunktdünnschicht durchdringt; c) Abscheiden eines Halbleiters, in welchem zu dem Halbleitersubstrat komplementäre Störstellen dotiert sind, auf der Halbleiterquantenpunktdünnschicht, bei welcher die Porenanordnung ausgebildet ist; und d) nacheinander Ausbilden einer transparenten leitfähigen Schicht und einer oberen Elektrode auf dem Halbleiter, in welchem die komplementären Störstellen dotiert sind, und Ausbilden einer unteren Elektrode an einem unteren Abschnitt des Halbleitersubstrats.