公开(公告)号：US20180175303A1

公开(公告)日：2018-06-21

申请号：US15393173

申请日：2016-12-28

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Ansoon KIM ,  Songwoung HONG ,  Jeong Won KIM ,  Hyuksang KWON

IPC: H01L51/00

CPC classification number: H01L51/0067 ,  C01B25/02 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/70 ,  H01L29/778 ,  H01L29/861 ,  H01L51/0015 ,  H01L51/05 ,  H01L51/0558 ,  H01L51/0575 ,  H01L51/42

Abstract: Provided are a lateral p-n junction black phosphorus thin film, and a method of manufacturing the same, and specifically, a lateral p-n junction black phosphorus thin film in which a p-type black phosphorus thin film having a p-type semiconductor property and a n-type black phosphorus thin film having a n-type semiconductor property form a lateral junction by modifying some regions on a surface of the black phosphorus thin film through light irradiation with a compound having a specific chemical structure, and a method of manufacturing the same.