公开(公告)号：US20180138039A1

公开(公告)日：2018-05-17

申请号：US15576664

申请日：2016-03-24

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Hyuksang KWON ,  Jeong Won KIM ,  Eun Seong LEE

IPC: H01L21/02 ,  H01L21/428

CPC classification number: H01L21/02664 ,  H01L21/02 ,  H01L21/02521 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/205 ,  H01L21/428 ,  H01L29/24 ,  H01L29/34 ,  H01L29/78696 ,  H01L31/032 ,  H01L33/26

Abstract: The present invention relates to a method of fabricating a black phosphorus thin film and a black phosphorus thin film thereof and, more particularly, to a method of fabricating a black phosphorus ultrathin film by forming the black phosphorous ultrathin film in a chamber by active oxygen and removing accompanying black phosphorus oxide film water. The black phosphorus ultrathin film has a surface that does not substantially have defects and is uniform in a large area, and has a surface roughness property of 1 nm or less, to represent a high application property to an optoelectronic device and a field effect transistor.

公开(公告)号：US20180136136A1

公开(公告)日：2018-05-17

申请号：US15580117

申请日：2017-04-27

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Hyuksang KWON

IPC: G01N21/65 ,  G01N21/25

CPC classification number: G01N21/658 ,  G01N21/255 ,  G01N2201/06113 ,  G01N2201/12

Abstract: The present invention relates to a method for evaluating a SERS sensor substrate, comprising the steps of: a) measuring, through a dark-field microscope, the color of nanoparticles positioned on the SERS sensor substrate; b) converting the measured color into a distance between the nanoparticles; c) acquiring the Raman signal intensity of the SERS sensor substrate; d) acquiring the standard Raman signal intensity of a standard SERS sensor substrate including the nanoparticles having the distance that is the same as the converted distance; and e) comparing the Raman signal intensity and the standard Raman signal intensity.

公开(公告)号：US20180175303A1

公开(公告)日：2018-06-21

申请号：US15393173

申请日：2016-12-28

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Ansoon KIM ,  Songwoung HONG ,  Jeong Won KIM ,  Hyuksang KWON

IPC: H01L51/00

CPC classification number: H01L51/0067 ,  C01B25/02 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/70 ,  H01L29/778 ,  H01L29/861 ,  H01L51/0015 ,  H01L51/05 ,  H01L51/0558 ,  H01L51/0575 ,  H01L51/42

Abstract: Provided are a lateral p-n junction black phosphorus thin film, and a method of manufacturing the same, and specifically, a lateral p-n junction black phosphorus thin film in which a p-type black phosphorus thin film having a p-type semiconductor property and a n-type black phosphorus thin film having a n-type semiconductor property form a lateral junction by modifying some regions on a surface of the black phosphorus thin film through light irradiation with a compound having a specific chemical structure, and a method of manufacturing the same.