公开(公告)号：US20220244203A1

公开(公告)日：2022-08-04

申请号：US17726382

申请日：2022-04-21

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Jeong Won KIM ,  Jiyoung YOON

IPC: G01N23/2273

Abstract: In a method for determining an energy level of a core/shell according to an example, a valence band energy level of a shell and a core-level energy level of a core in a core/shell nanoparticle are measured together, and by using a valence band energy level and a core-level of a core nanoparticle including only a core, a reliable energy level in a core/shell structure may be determined.

公开(公告)号：US20180175303A1

公开(公告)日：2018-06-21

申请号：US15393173

申请日：2016-12-28

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Ansoon KIM ,  Songwoung HONG ,  Jeong Won KIM ,  Hyuksang KWON

IPC: H01L51/00

CPC classification number: H01L51/0067 ,  C01B25/02 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/70 ,  H01L29/778 ,  H01L29/861 ,  H01L51/0015 ,  H01L51/05 ,  H01L51/0558 ,  H01L51/0575 ,  H01L51/42

Abstract: Provided are a lateral p-n junction black phosphorus thin film, and a method of manufacturing the same, and specifically, a lateral p-n junction black phosphorus thin film in which a p-type black phosphorus thin film having a p-type semiconductor property and a n-type black phosphorus thin film having a n-type semiconductor property form a lateral junction by modifying some regions on a surface of the black phosphorus thin film through light irradiation with a compound having a specific chemical structure, and a method of manufacturing the same.

公开(公告)号：US20180138039A1

公开(公告)日：2018-05-17

申请号：US15576664

申请日：2016-03-24

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Hyuksang KWON ,  Jeong Won KIM ,  Eun Seong LEE

IPC: H01L21/02 ,  H01L21/428

CPC classification number: H01L21/02664 ,  H01L21/02 ,  H01L21/02521 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/205 ,  H01L21/428 ,  H01L29/24 ,  H01L29/34 ,  H01L29/78696 ,  H01L31/032 ,  H01L33/26

Abstract: The present invention relates to a method of fabricating a black phosphorus thin film and a black phosphorus thin film thereof and, more particularly, to a method of fabricating a black phosphorus ultrathin film by forming the black phosphorous ultrathin film in a chamber by active oxygen and removing accompanying black phosphorus oxide film water. The black phosphorus ultrathin film has a surface that does not substantially have defects and is uniform in a large area, and has a surface roughness property of 1 nm or less, to represent a high application property to an optoelectronic device and a field effect transistor.