Photolithography method
    7.
    发明授权

    公开(公告)号:US10108092B2

    公开(公告)日:2018-10-23

    申请号:US14895180

    申请日:2015-06-09

    Inventor: Eun-Ah You

    Abstract: Provided is a photolithography method, including: a) forming a photoresist layer satisfying D=m*(λ/2n) (D is a thickness of the photoresist layer, n is a refractive index of the photoresist, λ is a wavelength of irradiated light at the time of exposure, and m is a natural number of 1 or more) on a substrate; and b) manufacturing a photoresist pattern having a ring shape by exposing the photoresist layer and developing the exposed photoresist layer using a photo mask including a transparent substrate and a plate-type metal dot contacting a light emitting surface of the transparent substrate.

    Apparatus for dipping substrate
    8.
    发明授权

    公开(公告)号:US09795982B2

    公开(公告)日:2017-10-24

    申请号:US14892900

    申请日:2015-05-19

    Inventor: Eun-Ah You

    CPC classification number: B05C3/02 B05C3/04 B05C13/02 C25D17/00

    Abstract: An apparatus for dipping a substrate includes: a body having an internal plate formed therein, and including a backing plate provided over the internal plate; a crucible accommodating an aqueous solution therein and provided over the backing plate; a crucible driving unit provided in the body and connected to the crucible to move the crucible in a horizontal direction or a vertical direction of the body; a support having a lower end to which a substrate is fixed; a support driving unit provided to an upper side of the body and connected to the support to drive the support in a length direction of the support or rotate the support in the vertical direction of the body; and a controlling unit connected to the crucible driving unit and the support driving unit to control driving of the crucible driving unit and the support driving unit.

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