CONVEYING METHOD FOR SEMICONDUCTOR WAFER

    公开(公告)号:JPS6246811A

    公开(公告)日:1987-02-28

    申请号:JP18169885

    申请日:1985-08-21

    Applicant: KOSAKA LAB

    Abstract: PURPOSE:To protect a semiconductor wafer from scratches and dust sticking, by inserting the thin disclike semiconductor wafer into an oval section transfer pipe whose major axis is larger than a diameter of this semiconductor wafer and the minor axis is shorter than this diameter, and transferring the wafer with a fluid. CONSTITUTION:A transfer pipe 2 consists in an oval section taking its major axis (a) to be larger than a diameter R of a semiconductor wafer 1 and to be smaller than the diameter R of its minor axis (b). A fluid is made to flow in this transfer pipe whereby the semiconductor wafer is transferable, and since this semiconductor wafer 1 has a little chance to be exposed in the air, a fear of dust being stuck is reducible and, what is more, scratches and the like attributable to a conveying device are hardly sustained.

    ARTICLE POSITIONING METHOD
    3.
    发明专利

    公开(公告)号:JPS6093306A

    公开(公告)日:1985-05-25

    申请号:JP19991783

    申请日:1983-10-27

    Applicant: KOSAKA LAB

    Abstract: PURPOSE:To make precise measurement possible in case of measurement of the shape of an article such as out of roundness or the like, by jetting compressed air uniformly from a jetting member consisting of a porous material and fitting an object to be measured to this jetting member with a narrow gap between them to hold the objet to be measured in the stable state. CONSTITUTION:Compressed air is supplied to an air chamber 11 provided in a supporting plate 7, which is supported freely rotatably on a base plate 10 through a thrust bearing 9, through an air path 12. Compressed air is jetted uniformly from the outside face of a part projected from the supporting plate 7. The outside diameter of a jetting member 8 is so determined that the inside diameter of a cylindrical object 1 to be measured whose center should be obtained is slightly larger than the outside diameter of the jetting member 8 and the object 1 to be measured can be fitted easily to the jetting member 8. Even if the gap between the inside circumferential face of the object 1 to be measured and the outside circumferential face of the jetting member 8 is not uniform, this ununiformity is corrected immediately, and the width of the gap is made uniform throughout the circumference. Thus, the center of the object 1 to be measured coincides with the center of the jetting member 8.

    POROUS STATIC PRESSURE GAS BEARING

    公开(公告)号:JPS5850314A

    公开(公告)日:1983-03-24

    申请号:JP14550181

    申请日:1981-09-17

    Abstract: PURPOSE:To adjust the rate of gas infiltration to the predetermined value by applying solid powder on the face of a bearing made of porous material. CONSTITUTION:Infiltration rate of a bearing member 3 is set larger than a design value through appropriate selection of grain size of material, the thickness of the bearing member 3 and the like. After thus making up the material into a bearing of predetermined measurement, solid powder 9 is applied on the face 8 of the bearing so as to cause the plugging due to said powder in small holes opening on said face of the bearing member made of porous material, thereby lowering the rate of infiltration to the design value.

    CUTTING METHOD FOR GLASS PANEL
    6.
    发明专利

    公开(公告)号:JPH05185270A

    公开(公告)日:1993-07-27

    申请号:JP2435692

    申请日:1992-01-16

    Applicant: KOSAKA LAB

    Abstract: PURPOSE:To improve a cutting speed, prevent splashing of glass splinters generated by chipping and prevent surface flawing of the glass panel 8 by the glass splinters. CONSTITUTION:A slight volume of liquid 25 is stuck to the surface of the glass panel 8 to cover line traces 22 formed on this surface. These line traces 22 are then irradiated with a laser beam to generate thermal strains in the line trace 22 parts and to evaporate the liquid 25 advancing into a crack 26. As a result, the glass panel 8 is rapidly cut. The glass splinters are confined by the liquid 25 and are prevented from splashing to the surroundings.

    PROCESSING METHOD FOR SEMICONDUCTOR WAFER

    公开(公告)号:JPS6245123A

    公开(公告)日:1987-02-27

    申请号:JP18397885

    申请日:1985-08-23

    Applicant: KOSAKA LAB

    Abstract: PURPOSE:To conduct polishing rapidly while obtaining an excellent specular surface by thickening the concentration of abrasives first and thinning it as processing progresses. CONSTITUTION:A semiconductor wafer 1 is fitted onto the lower surface of a holding plate 11, the holding plate 11 is turned through a belt 13, a pulley 12 and a vertical shaft 10 while a lifting lever 14 is rotated and operated so as to push down a thrust bearing 14b, and the ground surface of the wafer 1 is pushed against the ground surface of a polisher 3. The upper surface of the polisher 3 is supplied with abrasive 4 under the state, and a rotating disk 7 is revolved and the holding plate 11 is reciprocated while being turned, thus rubbing the polisher 3 and the wafer 1 each other. When the concentration of abrasives is thickened first and thinned as processing progresses, strong etching action is obtained at the initial stage of processing, and an excellent specular surface is acquired at the last stage of processing.

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