公开(公告)号：US11061186B2

公开(公告)日：2021-07-13

申请号：US16199468

申请日：2018-11-26

Applicant: GLOBALFOUNDRIES U.S. INC. ,  KHALIFA UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Ajey Poovannummoottil Jacob ,  Marcus V. S. Dahlem ,  Humaira Zafar ,  Anatol Khilo ,  Sujith Chandran

IPC: G02B6/12 ,  G02B6/125 ,  G02B6/124 ,  G02B6/136

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to rib waveguide structures and methods of manufacture. The structure includes: a waveguide structure comprising one or more bends, an input end and an output end; and grating structures which are positioned adjacent to the one or more bends of the waveguide structure.

公开(公告)号：US20180038890A1

公开(公告)日：2018-02-08

申请号：US15670281

申请日：2017-08-07

Applicant: Khalifa University of Science and Technology

Inventor： Marcus S. Dahlem ,  Evgenii Demidov ,  Anatol Khilo

IPC: G01P15/13 ,  G01C19/56 ,  G01P15/097

CPC classification number: G01P15/131 ,  B81B2201/0235 ,  B81B2201/047 ,  B81C1/00246 ,  B81C2201/0143 ,  B81C2201/0188 ,  B81C2203/0714 ,  G01C19/56 ,  G01C19/66 ,  G01P15/093 ,  G01P15/097

Abstract: A method of forming a photonic inertial sensor includes providing a substrate having an insulation layer and a silicon layer on the insulation layer opposite the substrate; etching the silicon layer to form a silicon proof mass for the photonic inertial sensor; etching at least a portion of the insulation layer underneath the silicon proof mass to suspend the silicon proof mass; and depositing a high-density mass-increasing layer on the silicon proof mass to thereby increase the mass of the silicon proof mass.