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公开(公告)号:US20240158953A1
公开(公告)日:2024-05-16
申请号:US18224396
申请日:2023-07-20
Applicant: Korea Institute of Ceramic Engineering and Technology , Electronics and Telecommunications Research Institute
Inventor: Dae-Woo JEON , Ji-Hyeon PARK , Jae-Kyoung MUN
Abstract: Disclosed are an alpha gallium oxide thin-film structure having high conductivity obtained using selective area growth in a HVPE growth manner, and a method for manufacturing the same, in which a nitride-based nitride film pattern is formed on an alpha gallium oxide thin-film so as to expose only a selected area thereof, and re-growth is performed only on the partially exposed area thereof, thereby forming a high-quality patterned alpha gallium oxide re-growth pattern.
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2.
公开(公告)号:US20230175168A1
公开(公告)日:2023-06-08
申请号:US18053989
申请日:2022-11-09
Inventor: Dae-Woo JEON , Ji-Hyeon Park
CPC classification number: C30B29/16 , C30B25/14 , C30B25/165 , C30B33/02
Abstract: Proposed is a manufacturing method of a high-quality β-Ga2O3 thin film using a high-quality β-Ga2O3 thin film manufacturing apparatus based on halide vapor phase epitaxy (HVPE) growth. The apparatus includes a reaction gas generating unit in which a chlorine-based gas and Ga in a source zone react to generate GaClx, a dopant gas supply unit, an additional chlorine-based gas supply unit for supplying an additional chlorine-based gas in a source tube, oxygen-based gas supply units, and a susceptor unit supporting a substrate on which a Ga2O3 thin film is to be formed. During the epitaxial growth, the additional hydrogen chloride (HCl) gas is supplied to reduce the pre-reaction between precursors, and a movement distance to the susceptor can is increased to increase growth rate and growth speed to control the crystallinity. Thus, high-quality epitaxial growth and a high production yield can be achieved.
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