公开(公告)号：US20240158953A1

公开(公告)日：2024-05-16

申请号：US18224396

申请日：2023-07-20

Applicant: Korea Institute of Ceramic Engineering and Technology ,  Electronics and Telecommunications Research Institute

Inventor： Dae-Woo JEON ,  Ji-Hyeon PARK ,  Jae-Kyoung MUN

IPC: C30B25/04 ,  C30B25/10 ,  C30B25/16 ,  C30B25/22 ,  C30B29/16 ,  C30B29/38

CPC classification number: C30B25/04 ,  C30B25/10 ,  C30B25/165 ,  C30B25/22 ,  C30B29/16 ,  C30B29/38

Abstract: Disclosed are an alpha gallium oxide thin-film structure having high conductivity obtained using selective area growth in a HVPE growth manner, and a method for manufacturing the same, in which a nitride-based nitride film pattern is formed on an alpha gallium oxide thin-film so as to expose only a selected area thereof, and re-growth is performed only on the partially exposed area thereof, thereby forming a high-quality patterned alpha gallium oxide re-growth pattern.

公开(公告)号：US20230175168A1

公开(公告)日：2023-06-08

申请号：US18053989

申请日：2022-11-09

Applicant: Korea Institute of Ceramic Engineering and Technology

Inventor： Dae-Woo JEON ,  Ji-Hyeon Park

IPC: C30B29/16 ,  C30B25/14 ,  C30B25/16 ,  C30B33/02

CPC classification number: C30B29/16 ,  C30B25/14 ,  C30B25/165 ,  C30B33/02

Abstract: Proposed is a manufacturing method of a high-quality β-Ga2O3 thin film using a high-quality β-Ga2O3 thin film manufacturing apparatus based on halide vapor phase epitaxy (HVPE) growth. The apparatus includes a reaction gas generating unit in which a chlorine-based gas and Ga in a source zone react to generate GaClx, a dopant gas supply unit, an additional chlorine-based gas supply unit for supplying an additional chlorine-based gas in a source tube, oxygen-based gas supply units, and a susceptor unit supporting a substrate on which a Ga2O3 thin film is to be formed. During the epitaxial growth, the additional hydrogen chloride (HCl) gas is supplied to reduce the pre-reaction between precursors, and a movement distance to the susceptor can is increased to increase growth rate and growth speed to control the crystallinity. Thus, high-quality epitaxial growth and a high production yield can be achieved.