公开(公告)号：US11476116B2

公开(公告)日：2022-10-18

申请号：US17358284

申请日：2021-06-25

Applicant: Korea Institute of Ceramic Engineering and Technology

Inventor： Dae-Woo Jeon ,  Ji-Hyeon Park

IPC: H01L21/02 ,  H01L21/265

Abstract: Disclosed is a method of manufacturing a gallium oxide thin film for a power semiconductor using a dopant activation technology that maximizes dopant activation effect and rearrangement effect of lattice in a grown epitaxial at the same time by performing in-situ annealing in a growth condition of a nitrogen atmosphere at the same time as the growth of a doped layer is finished.

公开(公告)号：US20230175168A1

公开(公告)日：2023-06-08

申请号：US18053989

申请日：2022-11-09

Applicant: Korea Institute of Ceramic Engineering and Technology

Inventor： Dae-Woo JEON ,  Ji-Hyeon Park

IPC: C30B29/16 ,  C30B25/14 ,  C30B25/16 ,  C30B33/02

CPC classification number: C30B29/16 ,  C30B25/14 ,  C30B25/165 ,  C30B33/02

Abstract: Proposed is a manufacturing method of a high-quality β-Ga2O3 thin film using a high-quality β-Ga2O3 thin film manufacturing apparatus based on halide vapor phase epitaxy (HVPE) growth. The apparatus includes a reaction gas generating unit in which a chlorine-based gas and Ga in a source zone react to generate GaClx, a dopant gas supply unit, an additional chlorine-based gas supply unit for supplying an additional chlorine-based gas in a source tube, oxygen-based gas supply units, and a susceptor unit supporting a substrate on which a Ga2O3 thin film is to be formed. During the epitaxial growth, the additional hydrogen chloride (HCl) gas is supplied to reduce the pre-reaction between precursors, and a movement distance to the susceptor can is increased to increase growth rate and growth speed to control the crystallinity. Thus, high-quality epitaxial growth and a high production yield can be achieved.