公开(公告)号：EP4550983A2

公开(公告)日：2025-05-07

申请号：EP24209890.3

申请日：2024-10-30

Applicant: Korea Institute of Science and Technology

Inventor： LEE, Myung-Jae ,  LEE, In-Ho

IPC: H10F30/225 ,  H10F30/227 ,  H10F77/30 ,  H10F77/40 ,  H10F39/12 ,  H10F39/18

Abstract: A light-sensing device (1) for sensing incident light (L) of a predetermined wavelength includes a photodiode substrate (100) having a P-N junction structure (110, 120, 130) for avalanche multiplication and a first surface (100a) and a second surface (100b) facing each other. The device has an absorption structure (150, 160) including a metal layer (150) formed on the first surface of the photodiode substrate and a functional layer (160) formed on the metal layer which increases an absorption rate of the metal layer with respect to light of the predetermined wavelength.

公开(公告)号：EP4550983A3

公开(公告)日：2025-05-14

申请号：EP24209890.3

申请日：2024-10-30

Applicant: Korea Institute of Science and Technology

Inventor： LEE, Myung-Jae ,  LEE, In-Ho

IPC: H10F30/225 ,  H10F30/227 ,  H10F77/30 ,  H10F77/40 ,  H10F39/12 ,  H10F39/18

Abstract: A light-sensing device (1) for sensing incident light (L) of a predetermined wavelength includes a photodiode substrate (100) having a P-N junction structure (110, 120, 130) for avalanche multiplication and a first surface (100a) and a second surface (100b) facing each other. The device has an absorption structure (150, 160) including a metal layer (150) formed on the first surface of the photodiode substrate and a functional layer (160) formed on the metal layer which increases an absorption rate of the metal layer with respect to light of the predetermined wavelength.