公开(公告)号：WO2023033399A1

公开(公告)日：2023-03-09

申请号：PCT/KR2022/012002

申请日：2022-08-11

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： LEE, Myung-Jae

IPC: H01L31/107 ,  G01J1/44

Abstract: A single-photon detection device includes a first well having a first conductivity type, a second well provided on the first well and having a second conductivity type that is different from the first conductivity type, a first depletion forming region provided on the second well and having the first conductivity type, a main depletion region provided between the first well and the second well, and a first sub-depletion region provided between the second well and the first depletion forming region, wherein the first well and the first depletion forming region are spaced apart from each other by the second well.

公开(公告)号：EP4550983A2

公开(公告)日：2025-05-07

申请号：EP24209890.3

申请日：2024-10-30

Applicant: Korea Institute of Science and Technology

Inventor： LEE, Myung-Jae ,  LEE, In-Ho

IPC: H10F30/225 ,  H10F30/227 ,  H10F77/30 ,  H10F77/40 ,  H10F39/12 ,  H10F39/18

Abstract: A light-sensing device (1) for sensing incident light (L) of a predetermined wavelength includes a photodiode substrate (100) having a P-N junction structure (110, 120, 130) for avalanche multiplication and a first surface (100a) and a second surface (100b) facing each other. The device has an absorption structure (150, 160) including a metal layer (150) formed on the first surface of the photodiode substrate and a functional layer (160) formed on the metal layer which increases an absorption rate of the metal layer with respect to light of the predetermined wavelength.

公开(公告)号：EP4550983A3

公开(公告)日：2025-05-14

申请号：EP24209890.3

申请日：2024-10-30

Applicant: Korea Institute of Science and Technology

Inventor： LEE, Myung-Jae ,  LEE, In-Ho

IPC: H10F30/225 ,  H10F30/227 ,  H10F77/30 ,  H10F77/40 ,  H10F39/12 ,  H10F39/18

Abstract: A light-sensing device (1) for sensing incident light (L) of a predetermined wavelength includes a photodiode substrate (100) having a P-N junction structure (110, 120, 130) for avalanche multiplication and a first surface (100a) and a second surface (100b) facing each other. The device has an absorption structure (150, 160) including a metal layer (150) formed on the first surface of the photodiode substrate and a functional layer (160) formed on the metal layer which increases an absorption rate of the metal layer with respect to light of the predetermined wavelength.