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1.发明申请UNITIZED CONFINEMENT RING ARRANGEMENTS AND METHODS THEREOF 审中-公开UNITIZED CONFINEMENT RING ARRANGEM AND METHODS WITHFORE
公开(公告)号：WO2011038344A3
公开(公告)日：2011-07-28
申请号：PCT/US2010050401
申请日：2010-09-27
Applicant: LAM RES CORP , DHINDSA RAJINDER , KALYANARAMAN RAJARAMANAN , MANI SATHYANARAYANAN , BHATTACHARYYA GUATAM
CPC classification number: H01J37/32449 , H01J37/32091 , H01J37/32477 , H01J37/32495 , H01J37/32532 , H01J37/32623 , H01J37/32642 , H01J37/32816 , H01J37/32834 , H01J2237/334
Abstract: An arrangement for performing pressure control in a plasma processing chamber comprising an upper electrode, a lower electrode, a unitized confinement ring arrangement wherein the upper electrode, the lower electrode and the unitized confinement ring arrangement are configured at least for surrounding a confined chamber region to facilitate plasma generation and confinement therein. The arrangement further includes at least one plunger configured for moving the unitized confinement ring arrangement in a vertical direction to adjust at least one of a first gas conductance path and a second gas conductance path to perform the pressure control, wherein the first gas conductance path is formed between the upper electrode and the unitized confinement ring arrangement and the second gas conductance path is formed between the lower electrode and the single unitized ring arrangement.
Abstract translation: 一种用于在等离子体处理室中执行压力控制的装置，包括上电极，下电极，单位化约束环装置，其中上电极，下电极和单位化约束环装置至少构成为围绕限制室区域 促进等离子体产生和限制。 所述装置还包括至少一个柱塞，所述至少一个柱塞构造成用于沿垂直方向移动所述单位化限制环装置，以调节第一气体传导路径和第二气体导电路径中的至少一个，以执行所述压力控制，其中所述第一气体导电路径 形成在上部电极和单元化的限制环装置之间，并且第二气体导电路径形成在下部电极和单个组合环形装置之间。
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2.发明公开UNITIZED CONFINEMENT RING ARRANGEMENTS AND METHODS THEREOF 审中-公开VEREINHEITLICHEBESCHRÄNKUNGSRINGANORDNUNGENUND VERFAHRENDAFÜR
公开(公告)号：EP2484185A4
公开(公告)日：2014-07-23
申请号：EP10819603
申请日：2010-09-27
Applicant: LAM RES CORP
IPC: C23C16/455 , H01J37/32
CPC classification number: H01J37/32449 , H01J37/32091 , H01J37/32477 , H01J37/32495 , H01J37/32532 , H01J37/32623 , H01J37/32642 , H01J37/32816 , H01J37/32834 , H01J2237/334
Abstract: An arrangement for performing pressure control in a plasma processing chamber comprising an upper electrode, a lower electrode, a unitized confinement ring arrangement wherein the upper electrode, the lower electrode and the unitized confinement ring arrangement are configured at least for surrounding a confined chamber region to facilitate plasma generation and confinement therein. The arrangement further includes at least one plunger configured for moving the unitized confinement ring arrangement in a vertical direction to adjust at least one of a first gas conductance path and a second gas conductance path to perform the pressure control, wherein the first gas conductance path is formed between the upper electrode and the unitized confinement ring arrangement and the second gas conductance path is formed between the lower electrode and the single unitized ring arrangement.
Abstract translation: 一种用于在等离子体处理室中执行压力控制的装置，包括上电极，下电极，单位化约束环装置，其中上电极，下电极和单位化约束环装置至少构成为围绕限制室区域 促进等离子体产生和限制。 该装置还包括至少一个柱塞，该柱塞构造用于沿垂直方向移动单位化限制环装置以调节第一气体导通路径和第二气体导电路径中的至少一个，以执行压力控制，其中第一气体导电路径 形成在上电极和单元化限制环装置之间，并且第二气体导电路径形成在下电极和单一组合环装置之间。
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公开(公告)号：SG10201405469WA
公开(公告)日：2014-10-30
申请号：SG10201405469W
申请日：2010-09-27
Applicant: LAM RES CORP
Abstract: An arrangement for performing pressure control in a plasma processing chamber comprising an upper electrode, a lower electrode, a unitized confinement ring arrangement wherein the upper electrode, the lower electrode and the unitized confinement ring arrangement are configured at least for surrounding a confined chamber region to facilitate plasma generation and confinement therein. The arrangement further includes at least one plunger configured for moving the unitized confinement ring arrangement in a vertical direction to adjust at least one of a first gas conductance path and a second gas conductance path to perform the pressure control, wherein the first gas conductance path is formed between the upper electrode and the unitized confinement ring arrangement and the second gas conductance path is formed between the lower electrode and the single unitized ring arrangement.
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公开(公告)号：SG178371A1
公开(公告)日：2012-03-29
申请号：SG2012009619
申请日：2010-09-27
Applicant: LAM RES CORP
Abstract: An arrangement for performing pressure control in a plasma processing chamber comprising an upper electrode, a lower electrode, a unitized confinement ring arrangement wherein the upper electrode, the lower electrode and the unitized confinement ring arrangement are configured at least for surrounding a confined chamber region to facilitate plasma generation and confinement therein. The arrangement further includes at least one plunger configured for moving the unitized confinement ring arrangement in a vertical direction to adjust at least one of a first gas conductance path and a second gas conductance path to perform the pressure control, wherein the first gas conductance path is formed between the upper electrode and the unitized confinement ring arrangement and the second gas conductance path is formed between the lower electrode and the single unitized ring arrangement.
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