公开(公告)号：MY159475A

公开(公告)日：2017-01-13

申请号：MYPI20052852

申请日：2005-06-22

Applicant: LAM RES CORP

Inventor： YEZDI DORDI ,  BOB MARASCHIN ,  JOHN BOYD ,  FRED C REDEKER

IPC: C25D17/00 ,  C25D17/14

Abstract: AN ELECTROPLATING HEAD (100) INCLUDING A CHAMBER (105) HAVING A FLUID ENTRANCE (111) AND A FLUID EXIT (112) IS PROVIDED. THE CHAMBER IS CONFIGURED TO CONTAIN A FLOW OF ELECTROPLATING SOLUTION FROM THE FLUID ENTRANCE TO THE FLUID EXIT. THE ELECTROPLATING HEAD ALSO INCLUDES AN ANODE (115A,115B) DISPOSED WITHIN THE CHAMBER (105A,105B). THE ANODE IS CONFIGURED TO BE ELECTRICALLY CONNECTED TO A POWER SUPPLY (117). THE ELECTROPLATING HEAD FURTHER INCLUDES A POROUS RESISTIVE MATERIAL (119) DISPOSED AT THE FLUID EXIT SUCH THAT THE FLOW OF ELECTROPLATING SOLUTION IS REQUIRED TO TRAVERSE THROUGH THE POROUS RESISTIVE MATERIAL.

公开(公告)号：MY184648A

公开(公告)日：2021-04-14

申请号：MYPI20044983

申请日：2004-12-02

Applicant: LAM RES CORP

Inventor： FRED C REDEKER ,  JOHN BOYD ,  YEZDI N DORDI ,  WILLIAM THIE ,  BOB MARASCHIN ,  JOEL M COOK

IPC: C23C18/16 ,  C23C18/54

Abstract: A method and an apparatus are provided for selective heating of a surface of a wafer (207, 1107) exposed to an electroless plating solution (203, 1103). Selective heating by a radiant energy source (209, 1109) causes a temperature increase at an interface between the wafer surface and the electroless plating solution (203, 1103). This temperature increase causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source (209, 1109). Additionally, a planar member (1119) can be positioned over and proximate to the wafer surface to entrap electroless plating solution (1103) between the planar member (1119) and the wafer surface. Material deposited through the plating reactions forms a planarizing layer (1201) that conforms to a planarity of the planar member. (Figure 2A)

公开(公告)号：SG185337A1

公开(公告)日：2012-11-29

申请号：SG2012079166

申请日：2005-06-28

Applicant: LAM RES CORP

Inventor： YEZDI DORDI ,  BOB MARASCHIN ,  JOHN BOYD ,  FRED C REDEKER

IPC: C25D17/00 ,  C25D17/14

Abstract: 235An electroplating head including a chamber having a fluid entrance and afluid exit is provided. The chamber is configured to contain a flow of electroplating solution from the fluid entrance to the fluid exit. The electroplating head also includes an anode disposed within the chamber. The anode is configured10 to be electrically connected to a power supply. The electroplating head further includes a porous resistive material disposed at the fluid exit such that the flow of electroplating solution is required to traverse through the porous resistive material. [Figure 1]

公开(公告)号：SG118432A1

公开(公告)日：2006-01-27

申请号：SG200504758

申请日：2005-06-28

Applicant: LAM RES CORP

Inventor： YEZDI DORDI ,  BOB MARASCHIN ,  JOHN BOYD ,  REDEKER FRED C

IPC: C25D17/00 ,  C25D17/14

Abstract: An electroplating head including a chamber having a fluid entrance and a fluid exit is provided. The chamber is configured to contain a flow of electroplating solution from the fluid entrance to the fluid exit. The electroplating head also includes an anode disposed within the chamber. The anode is configured to be electrically connected to a power supply. The electroplating head further includes a porous resistive material disposed at the fluid exit such that the flow of electroplating solution is required to traverse through the porous resistive material.

公开(公告)号：SG118429A1

公开(公告)日：2006-01-27

申请号：SG200504752

申请日：2005-06-28

Applicant: LAM RES CORP

Inventor： YEZDI DORDI ,  BOB MARASCHIN ,  JOHN BOYD ,  REDEKER FRED C ,  CARL WOODS

IPC: C25D7/12 ,  H01L21/288

Abstract: First and second electrodes (107A,107B) are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer (101) held by the wafer support. An anode (109) is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus (111) between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.