METHOD AND APPARATUS FOR MATERIAL DEPOSITION

    公开(公告)号:MY184648A

    公开(公告)日:2021-04-14

    申请号:MYPI20044983

    申请日:2004-12-02

    Applicant: LAM RES CORP

    Abstract: A method and an apparatus are provided for selective heating of a surface of a wafer (207, 1107) exposed to an electroless plating solution (203, 1103). Selective heating by a radiant energy source (209, 1109) causes a temperature increase at an interface between the wafer surface and the electroless plating solution (203, 1103). This temperature increase causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source (209, 1109). Additionally, a planar member (1119) can be positioned over and proximate to the wafer surface to entrap electroless plating solution (1103) between the planar member (1119) and the wafer surface. Material deposited through the plating reactions forms a planarizing layer (1201) that conforms to a planarity of the planar member. (Figure 2A)

    PROXIMITY PROCESSING USING CONTROLLED BATCH VOLUME WITH AN INTEGRATED PROXIMITY HEAD

    公开(公告)号:SG175595A1

    公开(公告)日:2011-11-28

    申请号:SG2011072907

    申请日:2007-10-05

    Applicant: LAM RES CORP

    Abstract: OF THE DISCLOSUREMethods for plating substrates are herein defined. One method includes providing a plating assembly having a plating source in a plating fluid and a plating facilitator in the plating fluid, and defining a plating meniscus between the plating source and the plating facilitator. The plating meniscus being contained in a path of the plating assembly. The method further includes traversing a substrate through the path of the plating assembly. The substrate being charged so that plating ions are attracted to a surface of the substrate when the plating meniscus is present on the surface of the substrate, wherein the substrate traversing through the path of the plating assembly enables plating across the surface of the substrate. And, inducing a uniform charge in the path where the plating meniscus is formed, such that charge from the plating source is substantially uniformly directed toward the plating facilitator as the substrate that is charged moves through the path of the plating assembly.[Figure 3A]

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