SUBSTRATE MENISCUS INTERFACE AND METHODS FOR OPERATION

    公开(公告)号:SG115839A1

    公开(公告)日:2005-10-28

    申请号:SG200502528

    申请日:2005-03-23

    Applicant: LAM RES CORP

    Inventor: CARL WOODS

    Abstract: An apparatus for processing a substrate with a fluid meniscus to be applied to a surface of the substrate is provided which includes a docking surface configured to be placed adjacent to an edge of the substrate where the docking surface is in the same plane as the substrate. The docking surface provides a transition interface to allow the fluid meniscus to enter and exit the surface of the substrate.

    CONTROLLED AMBIENT SYSTEM FOR INTERFACE ENGINEERING

    公开(公告)号:SG10201501328WA

    公开(公告)日:2015-04-29

    申请号:SG10201501328W

    申请日:2007-08-28

    Applicant: LAM RES CORP

    Abstract: A cluster architecture including a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules The lab-ambient controlled transfer module and the one or more wet substrate processing modules manage a first ambient environment having a vacuum transfer module coupled to the lab-ambient controlled transfer module and one or more plasma processing modules The vacuum transfer module and the one or more plasma processing modules manage a second ambient environment A controlled ambient transfer module coupled to the vacuum transfer module and one or more ambient processing modules manage a third ambient environment The cluster architecture therefore enables controlled processing of the substrate in eith the first, second or third ambient environments, as well as dupng associated transitions The embodiments also provide for efficient methods for filling a trench of a substrate

    Apparatus and method for plating semiconductor wafers

    公开(公告)号:SG118433A1

    公开(公告)日:2006-01-27

    申请号:SG200504761

    申请日:2005-06-28

    Applicant: LAM RES CORP

    Abstract: An electroplating apparatus (100) for electroplating a surface of a wafer (W) is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head (110) capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.

    Method and apparatus for plating semiconductor wafers

    公开(公告)号:SG118429A1

    公开(公告)日:2006-01-27

    申请号:SG200504752

    申请日:2005-06-28

    Applicant: LAM RES CORP

    Abstract: First and second electrodes (107A,107B) are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer (101) held by the wafer support. An anode (109) is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus (111) between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.

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