中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

5 records (took 0.02 seconds)

    SOLUTIONS FOR CLEANING SILICON SEMICONDUCTORS OR SILICON OXIDES
    2.
    发明申请
    SOLUTIONS FOR CLEANING SILICON SEMICONDUCTORS OR SILICON OXIDES 审中-公开
    清洁硅半导体或硅氧化物的方法

    公开(公告)号：WO2006039090A2

    公开(公告)日：2006-04-13

    申请号：PCT/US2005032411

    申请日：2005-09-13

    Applicant: LAM RES CORP ,  LEONTE OANA ,  CHEBI ROBERT

    Inventor： LEONTE OANA ,  CHEBI ROBERT

    IPC: C23G1/00 ,  C11D7/32

    CPC classification number: C11D3/044 ,  C11D1/523 ,  C11D1/90 ,  C11D3/2058 ,  C11D3/2079 ,  C11D3/30 ,  C11D3/33 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/261 ,  C11D7/265 ,  C11D7/3218 ,  C11D7/3245 ,  C11D11/0047 ,  H01L21/02052 ,  H01L21/0206

    Abstract: A solution for cleaning silicon semiconductors or silicon oxides, and methods for cleaning silicon semiconductors or silicon oxides using the solution, is disclosed. The solution includes hydrogen peroxide, ammonium hydroxide, an alkanolamine, and at least one of a tetraalkylammonium hydroxide, an alkanolamide, an amido-betaine, an c ca dihydroxyphenol, a carboxylic acid, a phosphonic acid, a chelating agent or a surfactant. The weight ratio of ammonium hydroxide to peroxide to water is between about 1:1:5 and 1:1-4:50, the weight ratio of ammonium hydroxide to water is between 1:5 and 1:50, and the molar ratio of component A to ammonium hydroxide is between 1:10 and 1:5000 is disclosed. The solution can achieve the efficiency equivalent to that of the conventional RCA two-step cleaning solution within a shorter time by one step preserving the silicon and silicon oxide substrate integrity and effectively remove contaminants such as organics, particles and metals from the surfaces of silicon semiconductors and silicon oxides without using strong acids such as HCI and sulfuric acid.

    Abstract translation: 公开了一种用于清洁硅半导体或硅氧化物的解决方案，以及使用该溶液来清洗硅半导体或氧化硅的方法。 溶液包括过氧化氢，氢氧化铵，链烷醇胺，以及四烷基氢氧化铵，链烷醇酰胺，酰氨基 - 甜菜碱，c-二羟基苯酚，羧酸，膦酸，螯合剂或表面活性剂中的至少一种。 氢氧化铵与过氧化氢与水的重量比约为1:1:5:1:1-4:50，氢氧化铵与水的重量比为1:5至1:50，摩尔比 组分A与氢氧化铵的摩尔比为1:10至1:5000。 该解决方案可以在较短时间内实现与传统RCA两步清洗溶液相当的效率，通过一步保持硅和氧化硅底物的完整性，并有效地从硅半导体表面去除有机物，颗粒和金属等污染物 和氧化硅，而不使用强酸如HCl和硫酸。

    PROCESS FOR ETCHING DIELECTRIC FILMS WITH IMPROVED RESIST AND/OR ETCH PROFILE CHARACTERISTICS
    3.
    发明专利
    PROCESS FOR ETCHING DIELECTRIC FILMS WITH IMPROVED RESIST AND/OR ETCH PROFILE CHARACTERISTICS 未知

    公开(公告)号：AU2003251519A1

    公开(公告)日：2003-12-31

    申请号：AU2003251519

    申请日：2003-06-13

    Applicant: LAM RES CORP

    Inventor： EPPLER AARON ,  SRINIVASAN MUKUND ,  CHEBI ROBERT

    IPC: H01L21/3065 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213

    Abstract: A process of etching openings in a dielectric layer includes supporting a semiconductor substrate in a plasma etch reactor, the substrate having a dielectric layer and a patterned photoresist and/or hardmask layer above the dielectric layer; supplying to the plasma etch reactor an etchant gas comprising (a) a fluorocarbon gas (CxFyHz, where x>=1, y>=1, and z>=0), (b) a silane-containing gas, hydrogen or a hydrocarbon gas (CxHy, where x>=1 and y>=4), (c) an optional oxygen-containing gas, and (d) an optional inert gas, wherein the flow rate ratio of the silane-containing gas to fluorocarbon gas is less than or equal to 0.1, or the flow rate ratio of the hydrogen or hydrocarbon gas to fluorocarbon gas is less than or equal to 0.5; energizing the etchant gas into a plasma; and plasma etching openings in the dielectric layer with enhanced photoresist/hardmask to dielectric layer selectivity and/or minimal photoresist distortion or striation.

    PROCESS FOR ETCHING DIELECTRIC FILMS WITH IMPROVED RESIST AND/OR ETCH PROFILE CHARACTERISTICS USING ETCH GAS WITH FLUOROCARBON AND HYDROGEN
    5.
    发明专利
    PROCESS FOR ETCHING DIELECTRIC FILMS WITH IMPROVED RESIST AND/OR ETCH PROFILE CHARACTERISTICS USING ETCH GAS WITH FLUOROCARBON AND HYDROGEN 未知

    公开(公告)号：SG145568A1

    公开(公告)日：2008-09-29

    申请号：SG2006086862

    申请日：2003-06-13

    Applicant: LAM RES CORP

    Inventor： EPPLER AARON ,  SRINIVASAN MUKUND ,  CHEBI ROBERT

    IPC: H01L21/3065 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/302 ,  H01L21/461

    Abstract: PROCESS FOR ETCHING DIELECTRIC FILMS WITH IMPROVED RESIST AND/OR ETCH PROFILE CHARACTERISTICS USING ETCH GAS WITH FLUOROCARBON AND HYDROGEN A process of etching openings in a dielectric layer includes supporting a semiconductor substrate (720) in a plasma etch reactor (700), the substrate having a dielectric layer and a patterned photoresist and/or hardmask layer above the dielectric layer; supplying to the plasma etch reactor (700) an etchant gas comprising (a) a fluorocarbon gas (CxFyHz, where x>=1, y>=l, and z>=0), (b) a silane-containing gas, hydrogen or a hydrocarbon gas (CxHy, where x>=1 and y>=4), (c) an optional oxygen-containing gas, and (d) an optional inert gas, wherein the flow rate ratio of the silane-containing gas to fluorocarbon gas is less than or equal to 0.1, or the flow rate ratio of the hydrogen or hydrocarbon gas to fluorocarbon gas is less than or equal to 0.5; energizing the etchant gas into a plasma; and, plasma etching openings in the dielectric layer with enhanced photoresist/hardmask to dielectric layer selectivity and/or minimal photoresist distortion or striation.

Patent Agency Ranking