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    STEPPED UPPER ELECTRODE FOR PLASMA PROCESSING UNIFORMITY
    1.
    发明申请
    STEPPED UPPER ELECTRODE FOR PLASMA PROCESSING UNIFORMITY 审中-公开
    用于等离子体加工均质的梯级上电极

    公开(公告)号：WO0231859A9

    公开(公告)日：2003-05-22

    申请号：PCT/US0142611

    申请日：2001-10-10

    Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  EPPLER AARON ,  LENZ ERIC

    Inventor： DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  EPPLER AARON ,  LENZ ERIC

    IPC: H01J37/32 ,  H01L21/3065

    CPC classification number: H01J37/32009 ,  H01J37/3244 ,  Y10T156/10

    Abstract: A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.

    Abstract translation: 一种具有前表面的等离子体放电电极，其中心部分包​​括排出形成等离子体的工艺气体的气体出口和基本上围绕气体出口的周边部分。 周边部分具有用于控制由电极形成的等离子体的密度的至少一个步骤。 在等离子体蚀刻装置等平板等离子体处理装置中，电极可以用作接地上电极。 可以改变下部电极上的台阶和相应的边缘环的几何特征以实现跨晶片表面所需的蚀刻速率分布。

    STEPPED UPPER ELECTRODE FOR PLASMA PROCESSING UNIFORMITY
    4.
    发明申请
    STEPPED UPPER ELECTRODE FOR PLASMA PROCESSING UNIFORMITY 审中-公开
    用于等离子体加工均质的梯级上电极

    公开(公告)号：WO0231859A3

    公开(公告)日：2002-09-12

    申请号：PCT/US0142611

    申请日：2001-10-10

    Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  EPPLER AARON ,  LENZ ERIC

    Inventor： DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  EPPLER AARON ,  LENZ ERIC

    IPC: H01J37/32 ,  H01L21/3065

    CPC classification number: H01J37/32009 ,  H01J37/3244 ,  Y10T156/10

    Abstract: A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.

    Abstract translation: 一种具有前表面的等离子体放电电极，其中心部分包​​括排出形成等离子体的工艺气体的气体出口和基本上围绕气体出口的周边部分。 周边部分具有用于控制由电极形成的等离子体的密度的至少一个步骤。 在等离子体蚀刻装置等平板等离子体处理装置中，电极可以用作接地上电极。 可以改变下部电极上的台阶和相应的边缘环的几何特征以实现跨晶片表面所需的蚀刻速率分布。

    Variable temperature method for tunable electrostatic chuck
    5.
    发明专利
    Variable temperature method for tunable electrostatic chuck 有权
    可变温度保护方法

    公开(公告)号：JP2010187023A

    公开(公告)日：2010-08-26

    申请号：JP2010113921

    申请日：2010-05-18

    Applicant: Lam Res Corp ,  ラム リサーチ コーポレイション

    Inventor： KAMP TOM A ,  GOTTSCHO RICHARD ,  LEE STEVE ,  LEE CHRIS ,  YAMAGUCHI YOKO ,  VAHEDI VAHID ,  EPPLER AARON

    IPC: H01L21/3065 ,  H01L21/00 ,  H01L21/311 ,  H01L21/683 ,  H01L21/768

    CPC classification number: H01L21/67248 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6831 ,  H01L21/76804

    Abstract: PROBLEM TO BE SOLVED: To provide an etching method in which etching process controllability is improved. SOLUTION: An etching processor for etching a wafer includes a chuck for holding the wafer and a temperature sensor for informing a temperature of the wafer. The chuck includes a heater controlled by a temperature control system. The temperature sensor is operatively coupled to the temperature control system to keep the temperature of the chuck at a selectable setting temperature. A first setting temperature and a second setting temperature are selected. The wafer is placed on the chuck and set to the first setting temperature. The wafer is then processed at the first setting temperature for a first period of time and at the second setting temperature for a second period of time. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供蚀刻工艺可控性提高的蚀刻方法。 解决方案：用于蚀刻晶片的蚀刻处理器包括用于保持晶片的卡盘和用于通知晶片温度的温度传感器。 卡盘包括由温度控制系统控制的加热器。 温度传感器可操作地耦合到温度控制系统以将卡盘的温度保持在可选择的设定温度。 选择第一设定温度和第二设定温度。 将晶片放置在卡盘上并设定为第一设定温度。 然后将晶片在第一设定温度下处理第一时间段，并在第二设定温度下处理第二时间段。 版权所有（C）2010，JPO＆INPIT

    6.
    发明专利
    未知

    公开(公告)号：DE60140893D1

    公开(公告)日：2010-02-04

    申请号：DE60140893

    申请日：2001-10-10

    Applicant: LAM RES CORP

    Inventor： DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  EPPLER AARON ,  LENZ ERIC

    IPC: H01J37/32 ,  H01L21/3065

    Abstract: A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.

    Stepped upper electrode for plasma processing uniformity
    7.
    发明专利
    Stepped upper electrode for plasma processing uniformity 未知

    公开(公告)号：AU1188602A

    公开(公告)日：2002-04-22

    申请号：AU1188602

    申请日：2001-10-10

    Applicant: LAM RES CORP

    Inventor： DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  EPPLER AARON ,  LENZ ERIC

    IPC: H01J37/32 ,  H01L21/3065

    Abstract: A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.

    8.
    发明专利
    未知

    公开(公告)号：AT362652T

    公开(公告)日：2007-06-15

    申请号：AT03728281

    申请日：2003-03-25

    Applicant: LAM RES CORP

    Inventor： KAMP TOM ,  GOTTSCHO RICHARD ,  LEE STEVE ,  LEE CHRIS ,  YAMAGUCHI YOKO ,  VAHEDI VAHID ,  EPPLER AARON

    IPC: H01L21/3065 ,  H01L21/324 ,  H01L21/00 ,  H01L21/311 ,  H01L21/68 ,  H01L21/683 ,  H01L21/768

    Abstract: An etch processor for etching a wafer includes a chuck for holding the wafer and a temperature sensor reporting a temperature of the wafer. The chuck includes a heater controlled by a temperature control system. The temperature sensor is operatively coupled to the temperature control system to maintain the temperature of the chuck at a selectable setpoint temperature. A first setpoint temperature and a second setpoint temperature are selected. The wafer is placed on the chuck and set to the first setpoint temperature. The wafer is then processed for a first period of time at the first setpoint temperature and for a second period of time at the second setpoint temperature.

    PROCESS FOR ETCHING DIELECTRIC FILMS WITH IMPROVED RESIST AND/OR ETCH PROFILE CHARACTERISTICS
    9.
    发明专利
    PROCESS FOR ETCHING DIELECTRIC FILMS WITH IMPROVED RESIST AND/OR ETCH PROFILE CHARACTERISTICS 未知

    公开(公告)号：AU2003251519A1

    公开(公告)日：2003-12-31

    申请号：AU2003251519

    申请日：2003-06-13

    Applicant: LAM RES CORP

    Inventor： EPPLER AARON ,  SRINIVASAN MUKUND ,  CHEBI ROBERT

    IPC: H01L21/3065 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213

    Abstract: A process of etching openings in a dielectric layer includes supporting a semiconductor substrate in a plasma etch reactor, the substrate having a dielectric layer and a patterned photoresist and/or hardmask layer above the dielectric layer; supplying to the plasma etch reactor an etchant gas comprising (a) a fluorocarbon gas (CxFyHz, where x>=1, y>=1, and z>=0), (b) a silane-containing gas, hydrogen or a hydrocarbon gas (CxHy, where x>=1 and y>=4), (c) an optional oxygen-containing gas, and (d) an optional inert gas, wherein the flow rate ratio of the silane-containing gas to fluorocarbon gas is less than or equal to 0.1, or the flow rate ratio of the hydrogen or hydrocarbon gas to fluorocarbon gas is less than or equal to 0.5; energizing the etchant gas into a plasma; and plasma etching openings in the dielectric layer with enhanced photoresist/hardmask to dielectric layer selectivity and/or minimal photoresist distortion or striation.

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