公开(公告)号：WO2006130319A3

公开(公告)日：2009-04-16

申请号：PCT/US2006018142

申请日：2006-05-10

Applicant: LAM RES CORP ,  LEE SANGHEON ,  CHOI DAE-HAN ,  KIM JISOO ,  CIRIGLIANO PETER ,  HUANG ZHISONG ,  CHARATAN ROBERT ,  SADJADI S M REZA

Inventor： LEE SANGHEON ,  CHOI DAE-HAN ,  KIM JISOO ,  CIRIGLIANO PETER ,  HUANG ZHISONG ,  CHARATAN ROBERT ,  SADJADI S M REZA

IPC: H01L21/302

CPC classification number: C23F4/00 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76816 ,  Y10S438/947

Abstract: A method for forming a feature (324) in an etch layer (308, 310) is provided. A photoresist layer (312) is formed over the etch layer (308, 310). The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer (318) is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer (320) is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions (324) of the photoresist features. Openings in the control layer (318) are opened with a control layer breakthrough chemistry. Fedures are etched into the etch layer (308, 310) with an etch chemistry, which is different from the control layer (318) break through chemistry, wherein the control layer (318) is more etch resistant to the etch with the etch chemistry than the conformal layer (320).

Abstract translation: 提供了一种在蚀刻层（308,310）中形成特征（324）的方法。 在蚀刻层（308,310）上形成光致抗蚀剂层（312）。 图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。 在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层（318）。 在光致抗蚀剂特征和控制层的侧壁上沉积共形层（320），以减小光刻胶特征的临界尺寸（324）。 控制层（318）中的开口以控制层突破性化学物质打开。 用蚀刻化学物质将蚀刻蚀刻到蚀刻层（308,310）中，蚀刻化学物质不同于控制层（318）突破化学，其中控制层（318）对蚀刻化学腐蚀更耐腐蚀， 共形层（320）。

公开(公告)号：WO2006081233A3

公开(公告)日：2009-04-16

申请号：PCT/US2006002459

申请日：2006-01-24

Applicant: LAM RES CORP ,  CIRIGLIANO PETER

Inventor： CIRIGLIANO PETER

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: C23F4/00 ,  H01J37/32623 ,  H01L21/67069 ,  Y10S156/915

Abstract: A confinement assembly for a semiconductor processing chamber is provided. The confinement assembly includes a plurality of confinement rings disposed over each other. Each of the plurality of confinement rings are separated by a space and each of the plurality of confinement rings have a plurality of holes defined therein. A plunger extending through aligned holes of corresponding confinement rings is provided. The plunger is moveable in a plane substantially orthogonal to the confinement rings. A proportional adjustment support is affixed to the plunger. The proportional adjustment support is configured to support the confinement rings, such that as the plunger moves in the plane, the space separating each of the plurality of confinement rings is proportionally adjusted, hi one embodiment the proportional adjustment support is a bellows sleeve. A semiconductor processing chamber and a method for confining a plasma in an etch chamber having a plurality of confinement rings are provided.

Abstract translation: 提供了一种用于半导体处理室的限制组件。 限制组件包括彼此设置的多个限制环。 多个限制环中的每一个由空间分开，并且多个限制环中的每一个具有限定在其中的多个孔。 提供了延伸穿过相应限制环的对准孔的柱塞。 柱塞可在基本上垂直于限制环的平面内移动。 柱塞附加比例调节支架。 比例调节支撑件构造成支撑限制环，使得当柱塞在平面中移动时，分离每个多个限制环的空间成比例地调整。在一个实施例中，比例调节支撑件是波纹管套筒。 提供半导体处理室和用于将等离子体限制在具有多个限制环的蚀刻室中的方法。

公开(公告)号：WO2007041423A1

公开(公告)日：2007-04-12

申请号：PCT/US2006038299

申请日：2006-09-29

Applicant: LAM RES CORP ,  SADJADI S M REZA ,  CIRIGLIANO PETER ,  KIM JI SOO ,  HUANG ZHISONG ,  HUDSON ERIC A

Inventor： SADJADI S M REZA ,  CIRIGLIANO PETER ,  KIM JI SOO ,  HUANG ZHISONG ,  HUDSON ERIC A

IPC: H01L21/311 ,  G03F7/40 ,  H01L21/027

CPC classification number: H01L21/0273 ,  H01L21/31144

Abstract: A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have irregular profiles along depths of the photoresist features. The irregular profiles along the depths of the photoresist features of the sidewalls of the photoresist features are corrected comprising at least one cycle, where each cycle comprises a sidewall deposition phase and a profile shaping phase. Feature is etched into the etch layer through the photoresist features. The mask is removed.

Abstract translation: 提供了一种用于蚀刻蚀刻层中的特征的方法。 在具有侧壁的光致抗蚀剂特征的蚀刻层上形成图案化的光致抗蚀剂掩模，其中光致抗蚀剂特征的侧壁沿光致抗蚀剂特征的深度具有不规则的轮廓。 沿光致抗蚀剂特征的侧壁的光致抗蚀剂特征的深度的不规则轮廓被校正包括至少一个循环，其中每个循环包括侧壁沉积阶段和轮廓成形阶段。 通过光致抗蚀剂特征将特征蚀刻到蚀刻层中。 去除面具。

公开(公告)号：WO2010033434A3

公开(公告)日：2010-06-10

申请号：PCT/US2009056716

申请日：2009-09-11

Applicant: LAM RES CORP ,  CIRIGLIANO PETER ,  ZHU HELEN ,  KIM JI SOO ,  SADJADI S M REZA

Inventor： CIRIGLIANO PETER ,  ZHU HELEN ,  KIM JI SOO ,  SADJADI S M REZA

IPC: H01L21/3065

CPC classification number: H01L21/31144 ,  H01L21/0337 ,  H01L21/312

Abstract: An etch layer underlying a patterned photoresist mask is provided. A plurality of sidewall forming processes are performed. Each sidewall forming process comprises depositing a protective layer on the patterned photoresist mask by performing multiple cyclical depositions. Each cyclical deposition involves at least a depositing phase for depositing a deposition layer over surfaces of the patterned photoresist mask and a profile shaping phase for shaping vertical surfaces in the deposition layer. Each sidewall forming process further comprises a breakthrough etch for selectively etching horizontal surfaces of the protective layer with respect to vertical surfaces of the protective layer. Afterwards, the etch layer is etched to form a feature having a critical dimension that is less than the critical dimension of the features in the patterned photoresist mask.

Abstract translation: 提供了图案化光刻胶掩模下面的蚀刻层。 执行多个侧壁形成工序。 每个侧壁形成工艺包括通过执行多个循环沉积在图案化的光致抗蚀剂掩模上沉积保护层。 每个循环沉积涉及至少沉积阶段，用于在图案化的光致抗蚀剂掩模的表面上沉积沉积层，以及用于在沉积层中形成垂直表面的轮廓成形阶段。 每个侧壁形成工艺还包括用于相对于保护层的垂直表面选择性地蚀刻保护层的水平表面的穿透蚀刻。 之后，刻蚀蚀刻层以形成临界尺寸小于图案化光致抗蚀剂掩模中特征的临界尺寸的特征。

公开(公告)号：WO2006096528A2

公开(公告)日：2006-09-14

申请号：PCT/US2006007643

申请日：2006-03-02

Applicant: LAM RES CORP ,  SADJADI S M REZA ,  HUDSON ERIC A ,  CIRIGLIANO PETER ,  KIM JI SOO ,  HUANG ZHISONG

Inventor： SADJADI S M REZA ,  HUDSON ERIC A ,  CIRIGLIANO PETER ,  KIM JI SOO ,  HUANG ZHISONG

IPC: H01L21/027 ,  G03F7/40

CPC classification number: H01L21/0273 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/76802 ,  Y10S438/942 ,  Y10S438/949

Abstract: A method for forming features in an etch layer is provided. A first mask is formed over the etch layer where the first mask defines a plurality of spaces with widths. The first mask is laterally etched where the etched first mask defines a plurality of spaces with widths that are greater than the widths of the spaces of the first mask. A sidewall layer is formed over the etched first mask where the sidewall layer defines a plurality of spaces with widths that are less than the widths of the spaces defined by the etched first mask. Features are etched into the etch layer through the sidewall layer, where the features have widths that are smaller than the widths of the spaces defined by the etched first mask. The mask and sidewall layer are removed.

Abstract translation: 提供了一种在蚀刻层中形成特征的方法。 在蚀刻层上形成第一掩模，其中第一掩模限定具有宽度的多个空间。 第一掩模被横向蚀刻，其中蚀刻的第一掩模限定宽度大于第一掩模的空间的宽度的多个空间。 在蚀刻的第一掩模上形成侧壁层，其中侧壁层限定宽度小于由蚀刻的第一掩模限定的空间的宽度的多个空间。 特征通过侧壁蚀刻到蚀刻层中，其中特征具有小于由蚀刻的第一掩模限定的空间的宽度的宽度。 去除掩模和侧壁层。

公开(公告)号：SG144148A1

公开(公告)日：2008-07-29

申请号：SG2008043630

申请日：2006-03-02

Applicant: LAM RES CORP

Inventor： SADJADI S M REZA ,  HUDSON ERIC A ,  CIRIGLIANO PETER ,  KIM JI SOO ,  HUANG ZHISONG

Abstract: STABILIZED PHOTORESIST STRUCTURE FOR ETCHING PROCESS A method for forming features in an etch layer is provided. A first mask is formed over the etch layer where the first mask defines a plurality of spaces with widths. The first mask is laterally etched where the etched first mask defines a plurality of spaces with widths that are greater than the widths of the spaces of the first mask. A sidewall layer is formed over the etched first mask where the sidewall layer defines a plurality of spaces with widths that are less than the widths of the spaces defined by the etched first mask. Features are etched into the etch layer through the sidewall layer, where the features have widths that are smaller than the widths of the spaces defined by the etched first mask. The mask and sidewall layer are removed.

公开(公告)号：IL179695A

公开(公告)日：2011-08-31

申请号：IL17969506

申请日：2006-11-29

Applicant: LAM RES CORP ,  WILCOXSON MARK HENRY ,  SADJADI REZA ,  HUDSON ERIC A ,  TIETZ JAMES V ,  YUN SEOKMIN ,  ZHU JI ,  CIRIGLIANO PETER ,  LEE SANGHEON ,  CHOI THOMAS S ,  LOEWENHARDT PETER

Inventor： WILCOXSON MARK HENRY ,  SADJADI REZA ,  HUDSON ERIC A ,  TIETZ JAMES V ,  YUN SEOKMIN ,  ZHU JI ,  CIRIGLIANO PETER ,  LEE SANGHEON ,  CHOI THOMAS S ,  LOEWENHARDT PETER

IPC: G03F7/42 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/461

Abstract: A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase using first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The performing the stripping phase for stripping the photoresist mask using a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.

公开(公告)号：MY158793A

公开(公告)日：2016-11-15

申请号：MYPI2010000238

申请日：2006-05-22

Applicant: LAM RES CORP

Inventor： LEE SANGHEON ,  CHOI DAE-HAN ,  KIM JISOO ,  CIRIGLIANO PETER ,  HUANG ZHISONG ,  CHARATAN ROBERT ,  SADJADI S M REZA

IPC: H01L21/302

Abstract: A METHOD FOR FORMING A FEATURE IN AN ETCH LAYER IS PROVIDED. A PHOTORESIST LAYER (312) IS FORMED (204) OVER THE ETCH LAYER (308). THE PHOTORESIST LAYER IS PATTERNED TO FORM PHOTORESIST FEATURES (314) WITH PHOTORESIST SIDEWALLS. A CONTROL LAYER (318) IS FORMED (206) OVER THE PHOTORESIST LAYER AND BOTTOMS OF THE PHOTORESIST FEATURES. A CONFORMAL LAYER (320) IS DEPOSITED (208) OVER THE SIDEWALLS OF THE PHOTORESIST FEATURES AND CONTROL LAYER TO REDUCE THE CRITICAL DIMENSIONS (316) OF THE PHOTORESIST FEATURES. OPENINGS IN THE CONTROL LAYER ARE OPENED (210) WITH A CONTROL LAYER BREAKTHROUGH CHEMISTRY. FEATURES ARE ETCHED (212) INTO THE ETCH LAYER WITH AN ETCH CHEMISTRY, WHICH IS DIFFERENT FROM THE CONTROL LAYER BREAKTHROUGH CHEMISTRY, WHEREIN THE CONTROL LAYER IS MORE ETCH RESISTANT TO THE ETCH WITH THE ETCH CHEMISTRY THAN THE CONFORMAL LAYER. FIG. 2

公开(公告)号：IL185743A

公开(公告)日：2010-12-30

申请号：IL18574307

申请日：2007-09-05

Applicant: LAM RES CORP ,  CIRIGLIANO PETER ,  SADJADI S M REZA ,  HUDSON ERIC ,  HUANG ZHISONG ,  KIM JI SOO

Inventor： CIRIGLIANO PETER ,  SADJADI S M REZA ,  HUDSON ERIC ,  HUANG ZHISONG ,  KIM JI SOO

Abstract: A method for etching a feature in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have striations forming peaks and valleys. The striations of the sidewalls of the photoresist features are reduced. The reducing the striations comprises at least one cycle, wherein each cycle comprises etching back peaks formed by the striations of the sidewalls of the photoresist features and depositing on the sidewalls of the photoresist features. Features are etched into the etch layer through the photoresist features. The photoresist mask is removed.