公开(公告)号：WO2006096528A2

公开(公告)日：2006-09-14

申请号：PCT/US2006007643

申请日：2006-03-02

Applicant: LAM RES CORP ,  SADJADI S M REZA ,  HUDSON ERIC A ,  CIRIGLIANO PETER ,  KIM JI SOO ,  HUANG ZHISONG

Inventor： SADJADI S M REZA ,  HUDSON ERIC A ,  CIRIGLIANO PETER ,  KIM JI SOO ,  HUANG ZHISONG

IPC: H01L21/027 ,  G03F7/40

CPC classification number: H01L21/0273 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/76802 ,  Y10S438/942 ,  Y10S438/949

Abstract: A method for forming features in an etch layer is provided. A first mask is formed over the etch layer where the first mask defines a plurality of spaces with widths. The first mask is laterally etched where the etched first mask defines a plurality of spaces with widths that are greater than the widths of the spaces of the first mask. A sidewall layer is formed over the etched first mask where the sidewall layer defines a plurality of spaces with widths that are less than the widths of the spaces defined by the etched first mask. Features are etched into the etch layer through the sidewall layer, where the features have widths that are smaller than the widths of the spaces defined by the etched first mask. The mask and sidewall layer are removed.

Abstract translation: 提供了一种在蚀刻层中形成特征的方法。 在蚀刻层上形成第一掩模，其中第一掩模限定具有宽度的多个空间。 第一掩模被横向蚀刻，其中蚀刻的第一掩模限定宽度大于第一掩模的空间的宽度的多个空间。 在蚀刻的第一掩模上形成侧壁层，其中侧壁层限定宽度小于由蚀刻的第一掩模限定的空间的宽度的多个空间。 特征通过侧壁蚀刻到蚀刻层中，其中特征具有小于由蚀刻的第一掩模限定的空间的宽度的宽度。 去除掩模和侧壁层。

公开(公告)号：EP1741128A4

公开(公告)日：2010-03-17

申请号：EP05738420

申请日：2005-04-22

Applicant: LAM RES CORP

Inventor： HUANG ZHISONG ,  SAM JOSE TONG ,  LENZ ERIC ,  DHINDSA RAJINDER ,  SADJADI REZA

IPC: C23F1/00 ,  C23C16/455 ,  H01J37/32 ,  H01L21/306

CPC classification number: C23C16/45561 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

公开(公告)号：JP2008060566A

公开(公告)日：2008-03-13

申请号：JP2007214211

申请日：2007-08-21

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： JI BING ,  EDELBERG ERIK A ,  YANAGAWA TAKUMI ,  HUANG ZHISONG ,  LI LUMIN

IPC: H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a bowing-free feature part in a dielectric layer on a semiconductor wafer, by etching a structure defined by an etch mask through the use of plasma. SOLUTION: This method forms a mask on a dielectric layer and a protective silicon-containing coating on an exposed surface of the mask and etches a feature part via the mask and protective silicon-containing coating. In another method, the feature part is partially etched, prior to protective silicon-containing coating formation. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：通过使用等离子体蚀刻由蚀刻掩模限定的结构来提供在半导体晶片上的电介质层中形成无弓形特征部分的方法。 解决方案：该方法在掩模的暴露表面上的电介质层和保护性含硅涂层上形成掩模，并通过掩模和保护性含硅涂层蚀刻特征部分。 在另一种方法中，在保护性含硅涂层形成之前，特征部分被部分蚀刻。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：WO2006130319A3

公开(公告)日：2009-04-16

申请号：PCT/US2006018142

申请日：2006-05-10

Applicant: LAM RES CORP ,  LEE SANGHEON ,  CHOI DAE-HAN ,  KIM JISOO ,  CIRIGLIANO PETER ,  HUANG ZHISONG ,  CHARATAN ROBERT ,  SADJADI S M REZA

Inventor： LEE SANGHEON ,  CHOI DAE-HAN ,  KIM JISOO ,  CIRIGLIANO PETER ,  HUANG ZHISONG ,  CHARATAN ROBERT ,  SADJADI S M REZA

IPC: H01L21/302

CPC classification number: C23F4/00 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76816 ,  Y10S438/947

Abstract: A method for forming a feature (324) in an etch layer (308, 310) is provided. A photoresist layer (312) is formed over the etch layer (308, 310). The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer (318) is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer (320) is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions (324) of the photoresist features. Openings in the control layer (318) are opened with a control layer breakthrough chemistry. Fedures are etched into the etch layer (308, 310) with an etch chemistry, which is different from the control layer (318) break through chemistry, wherein the control layer (318) is more etch resistant to the etch with the etch chemistry than the conformal layer (320).

Abstract translation: 提供了一种在蚀刻层（308,310）中形成特征（324）的方法。 在蚀刻层（308,310）上形成光致抗蚀剂层（312）。 图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。 在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层（318）。 在光致抗蚀剂特征和控制层的侧壁上沉积共形层（320），以减小光刻胶特征的临界尺寸（324）。 控制层（318）中的开口以控制层突破性化学物质打开。 用蚀刻化学物质将蚀刻蚀刻到蚀刻层（308,310）中，蚀刻化学物质不同于控制层（318）突破化学，其中控制层（318）对蚀刻化学腐蚀更耐腐蚀， 共形层（320）。

公开(公告)号：WO2004034445A2

公开(公告)日：2004-04-22

申请号：PCT/US0331712

申请日：2003-10-06

Applicant: LAM RES CORP ,  HUANG ZHISONG ,  LI LUMIN ,  SADJADI REZA

Inventor： HUANG ZHISONG

IPC: H01L21/311 ,  H01L21/768 ,  H01L21/00

CPC classification number: H01L21/76808 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76807 ,  H01L21/76831

Abstract: A method for etching a feature in a layer through an etching mask is provided. A protective layer is formed on exposed surfaces of the etching mask and vertical sidewalls of the feature with a passivation gas mixture. The feature is etched through the etching mask with reactive etching mixtures containing at least one etching chemical and at least one passivation chemical.

Abstract translation: 提供了通过蚀刻掩模蚀刻层中的特征的方法。 在蚀刻掩模的暴露表面和具有钝化气体混合物的特征的垂直侧壁上形成保护层。 通过蚀刻掩模蚀刻该特征，反应性蚀刻混合物含有至少一种蚀刻化学品和至少一种钝化化学品。

公开(公告)号：WO2006065630A3

公开(公告)日：2007-04-12

申请号：PCT/US2005044505

申请日：2005-12-06

Applicant: LAM RES CORP ,  HUANG ZHISONG ,  SADJADI S M REZA ,  MARKS JEFFREY

Inventor： HUANG ZHISONG ,  SADJADI S M REZA ,  MARKS JEFFREY

IPC: H01L21/311 ,  H01L21/00 ,  H01L21/308

CPC classification number: H01L21/67069 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144

Abstract: A method for forming features in an etch layer in an etch stack with an etch mask over the etch layer, wherein the etch mask has etch mask features with sidewalls, where the etch mask features have a first critical dimension, is provided. A cyclical critical dimension reduction is performed to form deposition layer features with a second critical dimension, which is less than the first critical dimension. Each cycle, comprises a depositing phase for depositing a deposition layer over the exposed surfaces, including the vertical sidewalls, of the etch mask features and an etching phase for etching back the deposition layer leaving a selective deposition on the vertical sidewalls. Features are etched into the etch layer, wherein the etch layer features have a third critical dimension, which is less than the first critical dimension.

Abstract translation: 一种用于在蚀刻层上的蚀刻层中形成蚀刻层中的特征的方法，其中蚀刻掩模具有带侧壁的蚀刻掩模特征，其中蚀刻掩模特征具有第一临界尺寸。 执行周期性临界尺寸降低以形成具有小于第一临界尺寸的第二临界尺寸的沉积层特征。 每个循环包括沉积相，用于在包括垂直侧壁的蚀刻掩模特征的暴露表面上沉积沉积层，以及用于蚀刻回沉积层的蚀刻阶段，在垂直侧壁上留下选择性沉积。 将特征蚀刻到蚀刻层中，其中蚀刻层特征具有小于第一临界尺寸的第三临界尺寸。

公开(公告)号：WO2004034445B1

公开(公告)日：2004-09-30

申请号：PCT/US0331712

申请日：2003-10-06

Applicant: LAM RES CORP ,  HUANG ZHISONG ,  LI LUMIN ,  SADJADI REZA

Inventor： HUANG ZHISONG

IPC: H01L21/311 ,  H01L21/768

CPC classification number: H01L21/76808 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76807 ,  H01L21/76831

Abstract: A method for etching a feature in a layer through an etching mask is provided. A protective layer is formed on exposed surfaces of the etching mask and vertical sidewalls of the feature with a passivation gas mixture. The feature is etched through the etching mask with reactive etching mixtures containing at least one etching chemical and at least one passivation chemical.

公开(公告)号：WO2007041423A1

公开(公告)日：2007-04-12

申请号：PCT/US2006038299

申请日：2006-09-29

Applicant: LAM RES CORP ,  SADJADI S M REZA ,  CIRIGLIANO PETER ,  KIM JI SOO ,  HUANG ZHISONG ,  HUDSON ERIC A

Inventor： SADJADI S M REZA ,  CIRIGLIANO PETER ,  KIM JI SOO ,  HUANG ZHISONG ,  HUDSON ERIC A

IPC: H01L21/311 ,  G03F7/40 ,  H01L21/027

CPC classification number: H01L21/0273 ,  H01L21/31144

Abstract: A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have irregular profiles along depths of the photoresist features. The irregular profiles along the depths of the photoresist features of the sidewalls of the photoresist features are corrected comprising at least one cycle, where each cycle comprises a sidewall deposition phase and a profile shaping phase. Feature is etched into the etch layer through the photoresist features. The mask is removed.

Abstract translation: 提供了一种用于蚀刻蚀刻层中的特征的方法。 在具有侧壁的光致抗蚀剂特征的蚀刻层上形成图案化的光致抗蚀剂掩模，其中光致抗蚀剂特征的侧壁沿光致抗蚀剂特征的深度具有不规则的轮廓。 沿光致抗蚀剂特征的侧壁的光致抗蚀剂特征的深度的不规则轮廓被校正包括至少一个循环，其中每个循环包括侧壁沉积阶段和轮廓成形阶段。 通过光致抗蚀剂特征将特征蚀刻到蚀刻层中。 去除面具。

公开(公告)号：WO2005112093A3

公开(公告)日：2007-01-11

申请号：PCT/US2005013582

申请日：2005-04-22

Applicant: LAM RES CORP ,  HUANG ZHISONG ,  SAM JOSE TONG ,  LENZ ERIC ,  DHINDSA RAJINDER ,  SADJADI REZA

Inventor： HUANG ZHISONG ,  SAM JOSE TONG ,  LENZ ERIC ,  DHINDSA RAJINDER ,  SADJADI REZA

IPC: C23F1/00 ,  H01L21/306

CPC classification number: C23C16/45561 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

Abstract: A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows. The switching section preferably includes fast switching valves operable to quickly open and close to allow fast switching of the first and second gases, preferably without the occurrence of undesirable pressure surges or flow instabilities in the flow of either gas.

Abstract translation: 提供了一种用于向诸如等离子体处理装置的等离子体处理室之类的室提供不同气体组成的气体分配系统。 气体分配系统可以包括气体供应部，流量控制部和切换部。 气体供应部分将第一和第二气体（通常为气体混合物）提供给流量控制部分，该控制部分控制第一和第二气体流到室的流动。 腔室可以包括多个区域，并且流量控制部分可以以期望的气体流量比将第一和第二气体供应到多个区域。 气体分配系统可以将第一和第二气体连续地供应到切换部分，并且切换部分可操作地切换第一和第二气体的流动，使得第一和第二处理气体中的一个被供应到腔室，而 第一和第二气体中的另一个被供应到旁路管线，然后切换气体流。 切换部分优选地包括可操作以快速打开和关闭的快速切换阀，以允许第一和第二气体的快速切换，优选地，在任一种气体的流动中不会出现不期望的压力波动或流动不稳定性。

公开(公告)号：IL167935A

公开(公告)日：2009-12-24

申请号：IL16793505

申请日：2005-04-10

Applicant: LAM RES CORP ,  LI LUMIN ,  HUANG ZHISONG ,  SADJADI REZA

Inventor： LI LUMIN ,  HUANG ZHISONG ,  SADJADI REZA

IPC: H01L21/311 ,  H01L21/768