公开(公告)号：WO2007005215A3

公开(公告)日：2009-04-23

申请号：PCT/US2006023134

申请日：2006-06-12

Applicant: LAM RES CORP ,  WOODS CARL ,  FARBER JEFFREY J

Inventor： WOODS CARL ,  FARBER JEFFREY J

IPC: B01D19/00

CPC classification number: B01D19/0068 ,  B01D19/0042

Abstract: A system (100) for producing bubble free liquid includes a continuous liquid source (102) and a de-bubbling chamber (104). The de- bubbling chamber (104) includes an outlet (108) and an inlet (112). The inlet (112) coupled to an outlet of the continuous liquid source by a supply pipe (106). The de-bubbling chamber (104) also includes at least one port (11OA-C) in a sidewall of the de-bubbling chamber (104). The at least one port (11OA-C) being at least a length L from the inlet (112) of the de-bubbling chamber (104). A method for producing bubble free liquid is also described.

Abstract translation: 用于产生无气泡液体的系统（100）包括连续液体源（102）和去气泡室（104）。 脱泡室（104）包括出口（108）和入口（112）。 入口（112）通过供应管（106）联接到连续液体源的出口。 除泡室（104）还包括在去气室（104）的侧壁中的至少一个端口（110A-C）。 所述至少一个端口（110A-C）距离去气室（104）的入口（112）至少为长度L。 还描述了一种生产无气泡液体的方法。

公开(公告)号：JP2001237236A

公开(公告)日：2001-08-31

申请号：JP2000369826

申请日：2000-12-05

Applicant: LAM RES CORP

Inventor： FARBER JEFFREY J ,  RADMAN ALLAN M ,  TREICHEL HELMUTH W

IPC: B08B1/04 ,  B08B3/04 ,  B08B3/08 ,  B08B7/04 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To provide a cleaning method for cleaning a semiconductor wafer after plasma etching. SOLUTION: A plurality of layers are formed on the semiconductor wafer. One of layers is an oxide layer with an upper photoresist mask. In a plasma etching step, a polymer film is generated on the via-shaped side wall. After an ashing process is carried out to remove the photoresist mask, the oxide layer and the via-shaped part in the oxide layer are brush-scrubbed with first chemicals in a first brush station. After the cleaning with pure water in the first brush station, the oxide layer and the via-shaped part are brush-scrubbed with second chemicals in a second brush station. In the second brush station, the oxide layer and the via-shaped part are scrubbed with pure water. The brush scrubbing in the first and second brush station is carried out in a way that the the polymer film is removed from the side walls of the via-shaped part.

公开(公告)号：DE60043686D1

公开(公告)日：2010-03-04

申请号：DE60043686

申请日：2000-11-27

Applicant: LAM RES CORP

Inventor： FARBER JEFFREY J ,  TREICHEL HELMUTH W ,  RADMAN ALLAN M

IPC: B08B1/04 ,  H01L21/306 ,  B08B3/04 ,  B08B3/08 ,  B08B7/04 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065

Abstract: A method for post plasma etch cleaning a semiconductor wafer is provided. The semiconductor wafer has a plurality of layers formed thereon, and one of the plurality of layers is an oxide layer that has an overlying photoresist mask. The method includes plasma etching a via feature in the oxide layer. The plasma etching is configured to generate a polymer film on sidewalls of the via feature. An ashing operation is then performed to remove the photoresist mask. The method then moves to brush scrubbing the oxide layer and the via feature defined in the oxide layer with first chemicals in a first brush station. Brush scrubbing the oxide layer and the via feature follows with DI water in the first brush station. Then, the oxide layer and the via feature are brush scrubbed with second chemicals in a second brush station. In the same second brush station, the oxide layer and the via feature are scrubbed with DI water. The brush scrubbing in the first and second brush stations is configured to remove the polymer film from the side walls of the via feature.

公开(公告)号：MY141072A

公开(公告)日：2010-03-15

申请号：MYPI20063115

申请日：2006-06-29

Applicant: LAM RES CORP

Inventor： WOODS CARLS ,  FARBER JEFFREY J

IPC: B01D19/00

Abstract: A SYSTEM FOR PRODUCING BUBBLE FREE LIQUID INCLUDES A CONTINUOUS LIQUID SOURCE (102') AND A DE-BUBBLING CHAMBER (L04). THE DE-BUBBLING CHAMBER INCLUDES AN OUTLET (L08) AND AN INLET (112). THE INLET COUPLED TO AN OUTLET OF THE CONTINUOUS LIQUID SOURCE BY A SUPPLY PIPE (106). THE DE-BUBBLING CHAMBER ALSO INCLUDES AT LEAST ONE PORT (110A-110C) IN A SIDEWALL (104A) OF THE DE-BUBBLING CHAMBER. THE AT LEAST ONE PORT BEING AT LEAST A LENGTH L FROM THE INLET OF THE DE-BUBBLING CHAMBER. A METHOD FOR PRODUCING BUBBLE FREE LIQUID IS ALSO DESCRIBED.

公开(公告)号：SG10201402465WA

公开(公告)日：2014-09-26

申请号：SG10201402465W

申请日：2010-05-21

Applicant: LAM RES CORP

Inventor： MAGNI ENRICO ,  O'DONNELL ROBERT J ,  FARBER JEFFREY J

Abstract: In an example embodiment, a wet system includes a proximity head and a holder for substrate (e.g., a semiconductor wafer). The proximity head is configured to cause a flow of an aqueous fluid in a meniscus across a surface of the proximity head. The surface of the proximity head interfaces with a surface of a substrate through the flow. The surface of the head is composed of a non-reactive material (e.g., thermoplastic) with modifications as to surface topography that confine, maintain, and/or facilitate the flow. The modifications as to surface topography might be inscribed on the surface with a conical scribe (e.g., with a diamond or SiC tip) or melt printed on the surface using a template. These modifications might produce hemi-wicking or superhydrophobicity. The holder exposes the surface of the substrate to the flow.

公开(公告)号：AT455368T

公开(公告)日：2010-01-15

申请号：AT00310491

申请日：2000-11-27

Applicant: LAM RES CORP

Inventor： FARBER JEFFREY J ,  TREICHEL HELMUTH W ,  RADMAN ALLAN M

IPC: B08B1/04 ,  H01L21/306 ,  B08B3/04 ,  B08B3/08 ,  B08B7/04 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065

Abstract: A method for post plasma etch cleaning a semiconductor wafer is provided. The semiconductor wafer has a plurality of layers formed thereon, and one of the plurality of layers is an oxide layer that has an overlying photoresist mask. The method includes plasma etching a via feature in the oxide layer. The plasma etching is configured to generate a polymer film on sidewalls of the via feature. An ashing operation is then performed to remove the photoresist mask. The method then moves to brush scrubbing the oxide layer and the via feature defined in the oxide layer with first chemicals in a first brush station. Brush scrubbing the oxide layer and the via feature follows with DI water in the first brush station. Then, the oxide layer and the via feature are brush scrubbed with second chemicals in a second brush station. In the same second brush station, the oxide layer and the via feature are scrubbed with DI water. The brush scrubbing in the first and second brush stations is configured to remove the polymer film from the side walls of the via feature.

公开(公告)号：SG176039A1

公开(公告)日：2011-12-29

申请号：SG2011083441

申请日：2010-05-21

Applicant: LAM RES CORP

Inventor： MAGNI ENRICO ,  O'DONNELL ROBERT J ,  FARBER JEFFREY J

Abstract: In an example embodiment, a wet system includes a proximity head and a holder for substrate (e.g., a semiconductor wafer). The proximity head is configured to cause a flow of an aqueous fluid in a meniscus across a surface of the proximity head. The surface of the proximity head interfaces with a surface of a substrate through the flow. The surface of the head is composed of a non-reactive material (e.g., thermoplastic) with modifications as to surface topography that confine, maintain, and/or facilitate the flow. The modifications as to surface topography might be inscribed on the surface with a conical scribe (e.g., with a diamond or SiC tip) or melt printed on the surface using a template. These modifications might produce hemi- wicking or superhydrophobicity. The holder exposes the surface of the substrate to the flow.

公开(公告)号：AT345579T

公开(公告)日：2006-12-15

申请号：AT00943063

申请日：2000-06-23

Applicant: LAM RES CORP

Inventor： FARBER JEFFREY J ,  SVIRCHEVSKI JULIA S

IPC: H01L21/304 ,  H01L21/00

Abstract: A method and system are provided for cleaning a surface of a semiconductor wafer following a fabrication operation. The system includes a brush box, which has a fluid manifold and at least one nozzle. The nozzle is connected to the fluid manifold by a flexible conduit. The nozzle is configured to spray a liquid onto the surface of the wafer at an application angle and at a fan angle. The application angle is defined between a plane of the surface of the wafer and a spraying plane of the liquid. The fan angle and the application angle are configured such that the spraying liquid covers the surface of the wafer in a quiescent manner.