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1.发明申请METHODS AND APPARATUS FOR IN SITU SUBSTRATE TEMPERATURE MONITORING BY ELECTROMAGNETIC RADIATION EMISSION 审中-公开用于电磁辐射发射的原位基板温度监测的方法和设备
公开(公告)号：WO2004015157A3
公开(公告)日：2004-04-01
申请号：PCT/US0325524
申请日：2003-08-13
Applicant: LAM RES CORP , MAGNI ENRICO
Inventor： MAGNI ENRICO
CPC classification number: H01J37/32431 , G01J5/60 , H01J2237/2001
Abstract: A method in a plasma processing system of determining the temperature of a substrate. The method includes providing a substrate comprising a set of materials, wherein the substrate being configured to absorb electromagnetic radiation comprising a first set of electromagnetic frequencies, to convert the first set of electromagnetic frequencies to a set of thermal vibrations, and to transmit a second set of electromagnetic frequencies. The method also includes positioning the substrate on a substrate support structure, wherein the substrate support structure includes a chuck; flowing an etchant gas mixture into a plasma reactor of the plasma processing system; and striking the etchant gas mixture to create a plasma, wherein the plasma comprises the first set of electromagnetic frequencies. The method further includes processing the substrate with the plasma thereby generating the second set of electromagnetic frequencies; calculating a magnitude of the second set of electromagnetic frequencies; and converting the magnitude to a temperature value.
Abstract translation: 一种确定衬底温度的等离子体处理系统中的方法。 该方法包括提供包括一组材料的衬底，其中衬底被配置为吸收包括第一组电磁频率的电磁辐射，将第一组电磁频率转换成一组热电振动，并且将第二组电磁频率 的电磁频率。 该方法还包括将衬底定位在衬底支撑结构上，其中衬底支撑结构包括卡盘; 使蚀刻剂气体混合物流入等离子体处理系统的等离子体反应器中; 并撞击蚀刻剂气体混合物以产生等离子体，其中等离子体包括第一组电磁频率。 该方法还包括用等离子体处理衬底，从而生成第二组电磁频率; 计算第二组电磁频率的大小; 并将该量值转换为温度值。
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2.发明申请METHODS FOR VERIFYING GAS FLOW RATES FROM A GAS SUPPLY SYSTEM INTO A PLASMA PROCESSING CHAMBER 审中-公开将气体供应系统的气体流量验证为等离子体加工室的方法
公开(公告)号：WO2007008509A3
公开(公告)日：2009-04-23
申请号：PCT/US2006026095
申请日：2006-07-05
Applicant: LAM RES CORP , LARSON DEAN J , HEFTY ROBERT C , TIETZ JAMES V , KENNEDY WILLIAM S , LENZ ERIC H , DENTY WILLIAM M JR , MAGNI ENRICO
Inventor： LARSON DEAN J , HEFTY ROBERT C , TIETZ JAMES V , KENNEDY WILLIAM S , LENZ ERIC H , DENTY WILLIAM M JR , MAGNI ENRICO
IPC: G01F25/00
CPC classification number: G01F1/42 , G01F1/36 , G01F25/0007 , G05D7/0652
Abstract: Methods of measuring gas flow rates in a gas supply system for supplying gas to a plasma processing chamber (12) are provided. In a differential flow method, a flow controller is operated at different set flow rates, and upstream orifice pressures are measured for the set flow rates at ambient conditions. The measured orifice pressures are referenced to a secondary flow verification method that generates corresponding actual gas flow rates for the different set flow rates. The upstream orifice pressures can be used as a differential comparison for subsequent orifice pressure measurements taken at any temperature condition of the chamber. In an absolute flow method, some parameters of a selected gas and orifice are predetermined, and other parameters of the gas are measured while the gas is being flowed from a flow controller at a set flow rate through an orifice.
Abstract translation: 提供了一种测量用于向等离子体处理室（12）供应气体的气体供应系统中的气体流量的方法。 在差分流动方法中，流量控制器以不同的设定流量运行，并且在环境条件下测量设定流量的上游孔口压力。 测量的孔口压力参考二次流量验证方法，该方法为不同的设定流量产生相应的实际气体流速。 上游孔压力可以用作在室的任何温度条件下进行的随后的孔口压力测量的差分比较。 在绝对流动方法中，预定了所选择的气体和孔口的一些参数，并且在气体以流量控制器以设定流量通过孔口流动时，测量气体的其它参数。
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3.发明公开METHODS FOR REMOVING BLACK SILICON AND BLACK SILICON CARBIDE FROM SURFACES OF SILICON AND SILICON CARBIDE ELECTRODES FOR PLASMA PROCESSING APPARATUSES 有权法黑硅和黑碳化硅硅表面和SILIZIUMCARBIDELEKTRODEN的等离子处理设备上删除
公开(公告)号：EP1827871A4
公开(公告)日：2009-09-16
申请号：EP05854301
申请日：2005-12-15
Applicant: LAM RES CORP
Inventor： LUPAN MICHELLE , HEFTY ROBERT , KELLY MICHAEL , MAGNI ENRICO
IPC: B44C1/22
CPC classification number: B08B7/0035 , H01J37/32 , H01J37/32862
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4.发明公开SEALED ELASTOMER BONDED Si ELECTRODES AND THE LIKE FOR REDUCED PARTICLE CONTAMINATION IN DIELECTRIC ETCH 有权密封式硅电极，弹性体电层蚀刻以降低颗粒污染结合和LIKE
公开(公告)号：EP1989727A4
公开(公告)日：2010-09-15
申请号：EP07749916
申请日：2007-02-05
Applicant: LAM RES CORP
Inventor： REN DAXING , MAGNI ENRICO , LENZ ERIC , ZHOU REN
IPC: H01L21/302 , H01L21/461
CPC classification number: H01J37/32532 , H01J37/32009 , Y10T156/10
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5.发明公开METHODS FOR SILICON ELECTRODE ASSEMBLY ETCH RATE AND ETCH UNIFORMITY RECOVERY 有权方法恢复对硅电极安排的蚀刻速率和ÄTZEINHEITLICHKEIT
公开(公告)号：EP1848597A4
公开(公告)日：2010-04-14
申请号：EP05854136
申请日：2005-12-15
Applicant: LAM RES CORP
Inventor： HUANG TUOCHUAN , REN DAXING , SHIH HONG , ZHOU CATHERINE , YAN CHUN , MAGNI ENRICO , YEN BI MING , HUBACEK JEROME , LIM DAE J , SUNG DOUGYONG
CPC classification number: H01L21/67069 , B08B3/10 , B08B3/12 , B24C1/003 , H01J37/32605
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Patent Agency Ranking6.发明申请SEALED ELASTOMER BONDED Si ELECTRODES AND THE LIKE FOR REDUCED PARTICLE CONTAMINATION IN DIELECTRIC ETCH 审中-公开密封弹性体粘结Si电极和类似于减少颗粒污染在电介质蚀刻
公开(公告)号：WO2007094984A3
公开(公告)日：2008-04-17
申请号：PCT/US2007003008
申请日：2007-02-05
Applicant: LAM RES CORP , REN DAXING , MAGNI ENRICO , LENZ ERIC , ZHOU REN
Inventor： REN DAXING , MAGNI ENRICO , LENZ ERIC , ZHOU REN
IPC: H01L21/302 , H01L21/461
CPC classification number: H01J37/32532 , H01J37/32009 , Y10T156/10
Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing having a backing member having a bonding surface, an inner electrode having a lower surface on one side and a bonding surface on the other side, and an outer electrode having a lower surface on one side and a bonding surface on the other side. At least one of the electrodes has a flange, which extends underneath at least a portion of the lower surface of the other electrode.
Abstract translation: 一种用于半导体衬底加工的等离子体反应室的电极组件，具有具有接合面的背衬构件，具有一侧下表面的内电极和另一侧的接合面，以及具有下表面的外电极 一侧和另一侧的接合表面。 至少一个电极具有凸缘，该凸缘在另一个电极的下表面的至少一部分的下方延伸。
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7.发明申请METHODS FOR SILICON ELECTRODE ASSEMBLY ETCH RATE AND ETCH UNIFORMITY RECOVERY 审中-公开用于硅电极组装蚀刻速率和蚀刻均匀性恢复的方法
公开(公告)号：WO2006071544A3
公开(公告)日：2007-08-16
申请号：PCT/US2005045361
申请日：2005-12-15
Applicant: LAM RES CORP , HUANG TUOCHUAN , REN DAXING , SHIH HONG , ZHOU CATHERINE , YAN CHUN , MAGNI ENRICO , YEN BI MING , HUBACEK JEROME , LIM DAE J , SUNG DOUGYONG
Inventor： HUANG TUOCHUAN , REN DAXING , SHIH HONG , ZHOU CATHERINE , YAN CHUN , MAGNI ENRICO , YEN BI MING , HUBACEK JEROME , LIM DAE J , SUNG DOUGYONG
IPC: B24B1/00
CPC classification number: H01L21/67069 , B08B3/10 , B08B3/12 , B24C1/003 , H01J37/32605
Abstract: Methods for cleaning an electrode assembly, which can be used for etching a dielectric material in a plasma etching chamber after the cleaning, comprise polishing a silicon surface of the electrode assembly, preferably to remove black silicon contamination therefrom.
Abstract translation: 用于清洁电极组件的方法，其可用于在清洁之后蚀刻等离子体蚀刻室中的电介质材料，包括抛光电极组件的硅表面，优选从其中去除黑色硅污染物。
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8.发明申请METHODS FOR REMOVING BLACK SILICON AND BLACK SILICON CARBIDE FROM SURFACES OF SILICON AND SILICON CARBIDE ELECTRODES FOR PLASMA PROCESSING APPARATUSES 审中-公开用于等离子体处理装置的硅和碳化硅电极表面去除黑色硅和碳黑碳黑的方法
公开(公告)号：WO2006071556A2
公开(公告)日：2006-07-06
申请号：PCT/US2005045541
申请日：2005-12-15
Applicant: LAM RES CORP , MAGNI ENRICO , KELLY MICHAEL , HEFTY ROBERT , LUPAN MICHELLE
Inventor： MAGNI ENRICO , KELLY MICHAEL , HEFTY ROBERT , LUPAN MICHELLE
CPC classification number: B08B7/0035 , H01J37/32 , H01J37/32862
Abstract: Methods for removing black silicon or black silicon carbide from a plasma-exposed surface of an upper electrode of a plasma processing chamber are provided. The methods include forming a plasma using a gas composition containing a fluorine-containing gas, and removing the black silicon or black silicon carbide from the surface with the plasma. The methods can also remove black silicon or black silicon carbide from surfaces of the components in the chamber in addition to the upper electrode.
Abstract translation: 提供了从等离子体处理室的上电极的等离子体暴露表面去除黑色硅或黑色碳化硅的方法。 所述方法包括使用含有含氟气体的气体组合物形成等离子体，并用等离子体从表面除去黑色硅或黑色碳化硅。 除了上电极之外，这些方法还可以从室中的部件的表面除去黑色硅或黑色碳化硅。
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9.发明申请METHODS FOR PROTECTING SILICON OR SILICON CARBIDE ELECTRODE SURFACES FROM MORPHOLOGICAL MODIFICATION DURING PLASMA ETCH PROCESSING 审中-公开在等离子体处理过程中从形态修饰中保护硅或碳化硅电极表面的方法
公开(公告)号：WO2006049954A2
公开(公告)日：2006-05-11
申请号：PCT/US2005038373
申请日：2005-10-26
Applicant: LAM RES CORP , CHEN WAN-LIN , TAKESHITA KENJI , ASO TSUYOSHI , KAWAGUCHI SEIJI , MCCLARD THOMAS , MAGNI ENRICO , KELLY MICHAEL , LUPAN MICHELLE , HEFTY ROBERT
Inventor： CHEN WAN-LIN , TAKESHITA KENJI , ASO TSUYOSHI , KAWAGUCHI SEIJI , MCCLARD THOMAS , MAGNI ENRICO , KELLY MICHAEL , LUPAN MICHELLE , HEFTY ROBERT
IPC: B44C1/22 , B08B6/00 , H01L21/311
CPC classification number: B08B7/0035 , B05D1/62 , H01J37/32559 , H01L21/31116
Abstract: Methods for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber are provided. The polymeric coating provides protection to the underlying surface of the electrode with respect to exposure to constituents of plasma and gaseous reactants. The methods can be performed during a process of cleaning the chamber, or during a process for etching a semiconductor substrate in the chamber.
Abstract translation: 提供了在等离子体处理室的硅或碳化硅电极上形成保护性聚合物涂层的方法。 相对于暴露于等离子体和气态反应物的组分，聚合物涂层为电极的下表面提供保护。 可以在清洁室的过程中或在用于蚀刻室中的半导体衬底的工艺期间执行这些方法。
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公开(公告)号：SG176039A1
公开(公告)日：2011-12-29
申请号：SG2011083441
申请日：2010-05-21
Applicant: LAM RES CORP
Inventor： MAGNI ENRICO , O'DONNELL ROBERT J , FARBER JEFFREY J
Abstract: In an example embodiment, a wet system includes a proximity head and a holder for substrate (e.g., a semiconductor wafer). The proximity head is configured to cause a flow of an aqueous fluid in a meniscus across a surface of the proximity head. The surface of the proximity head interfaces with a surface of a substrate through the flow. The surface of the head is composed of a non-reactive material (e.g., thermoplastic) with modifications as to surface topography that confine, maintain, and/or facilitate the flow. The modifications as to surface topography might be inscribed on the surface with a conical scribe (e.g., with a diamond or SiC tip) or melt printed on the surface using a template. These modifications might produce hemi- wicking or superhydrophobicity. The holder exposes the surface of the substrate to the flow.
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