公开(公告)号：WO2006026110A3

公开(公告)日：2007-04-26

申请号：PCT/US2005028571

申请日：2005-08-12

Applicant: LAM RES CORP ,  KADKHODAYAN BABAK ,  DHINDSA RAJINDER ,  FU YUEHONG

Inventor： KADKHODAYAN BABAK ,  DHINDSA RAJINDER ,  FU YUEHONG

IPC: H01L21/3065

CPC classification number: C04B35/505 ,  C04B2235/725 ,  C04B2235/728 ,  C04B2235/77 ,  C04B2235/9692 ,  H01J37/32642 ,  H01J2237/0206 ,  Y10T29/4973

Abstract: A yttria insulator ring for use in a plasma processing apparatus is provided to minimize arcing between the apparatus and a ground extension, while also increasing a mean time between cleanings (MTBC). The yttria insulator ring may be located between a ground extension and a plasma generation zone, or gap, of the chamber of the apparatus, as well as between an edge ring and the ground extension. Compared to a quartz ring, the yttria insulator ring can also provide improved semiconductor substrate uniformity because of improved RF coupling as a result of decreased reactivity and increased dielectric constant.

Abstract translation: 提供用于等离子体处理装置的氧化钇绝缘体环，以最小化装置和地面延伸部之间的电弧，同时也增加清洗之间的平均时间（MTBC）。 氧化钇绝缘体环可以位于设备的室的接地延伸部和等离子体产生区域或间隙之间，以及边缘环和接地延伸部之间。 与石英环相比，氧化钇绝缘体环也可以提供改善的半导体衬底均匀性，因为由于反应性降低和介电常数增加导致RF耦合改善。

公开(公告)号：SG157420A1

公开(公告)日：2009-12-29

申请号：SG2009078577

申请日：2005-08-12

Applicant: LAM RES CORP

Inventor： KADKHODAYAN BABAK ,  DHINDSA RAJINDER ,  FU YUEHONG

Abstract: A yttria insulator ring for use in a plasma processing apparatus is provided to minimize arcing between the apparatus and a ground extension, while also increasing a mean time between cleanings (MTBC). The yttria insulator ring may be located between a ground extension and a plasma generation zone, or gap, of the chamber of the apparatus, as well as between an edge ring and the ground extension. Compared to a quartz ring, the yttria insulator ring can also provide improved semiconductor substrate uniformity because of improved RF coupling as a result of decreased reactivity and increased dielectric constant.