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    LIGHT-UP PREVENTION IN ELECTROSTATIC CHUCKS
    2.
    发明申请
    LIGHT-UP PREVENTION IN ELECTROSTATIC CHUCKS 审中-公开
    防静电保护灯防护

    公开(公告)号：WO2011014328A3

    公开(公告)日：2011-05-05

    申请号：PCT/US2010040284

    申请日：2010-06-29

    Applicant: LAM RES CORP ,  STEVENSON TOM ,  BYUN DANIEL ,  ULLAL SAURABH ,  KADKHODAYAN BABAK ,  DHINDSA RAJINDER

    Inventor： STEVENSON TOM ,  BYUN DANIEL ,  ULLAL SAURABH ,  KADKHODAYAN BABAK ,  DHINDSA RAJINDER

    IPC: H01L21/687 ,  B23Q3/15 ,  H02N13/00

    CPC classification number: H01L21/68757 ,  H01J37/32541 ,  H01J37/3255 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/6875

    Abstract: An electrostatic chuck assembly is provided comprising a ceramic contact layer, a patterned bonding layer, an electrically conductive base plate, and a subterranean arc mitigation layer. The ceramic contact layer and the electrically conductive base plate cooperate to define a plurality of hybrid gas distribution channels formed in a subterranean portion of the electrostatic chuck assembly. Individual ones of the hybrid gas distribution channels comprise surfaces of relatively high electrical conductivity presented by the electrically conductive base plate and relatively low electrical conductivity presented by the ceramic contact layer. The subterranean arc mitigation layer comprises a layer of relatively low electrical conductivity and is formed over the relatively high conductivity surfaces of the hybrid gas distribution channels in the subterranean portion of the electrostatic chuck assembly. Semiconductor wafer processing chambers are also provided.

    Abstract translation: 提供一种静电卡盘组件，其包括陶瓷接触层，图案化结合层，导电基板和地下电弧缓解层。 陶瓷接触层和导电基板协作以形成在静电卡盘组件的地下部分中形成的多个混合气体分配通道。 混合气体分配通道中的各个包括由导电基板呈现的相对高的导电性的表面和由陶瓷接触层呈现的相对低的电导率。 地下电弧缓解层包括相对较低电导率的层，并且形成在静电卡盘组件的地下部分中的混合气体分配通道的较高电导率表面上。 还提供了半导体晶片处理室。

    EDGE RING ASSEMBLY WITH DIELECTRIC SPACER RING
    5.
    发明申请
    EDGE RING ASSEMBLY WITH DIELECTRIC SPACER RING 审中-公开
    带电介质环的边缘环组装

    公开(公告)号：WO2007019049A3

    公开(公告)日：2007-12-27

    申请号：PCT/US2006028844

    申请日：2006-07-24

    Applicant: LAM RES CORP ,  CHANG JEREMY ,  FISCHER ANDREAS ,  KADKHODAYAN BABAK

    Inventor： CHANG JEREMY ,  FISCHER ANDREAS ,  KADKHODAYAN BABAK

    IPC: H01L21/306 ,  H01L21/302

    CPC classification number: H01L21/467 ,  H01J37/32623 ,  Y10T29/4973

    Abstract: An edge ring assembly surrounds a substrate support surface in a plasma etching chamber. The edge ring assembly comprises an edge ring and a dielectric spacer ring. The dielectric spacer ring, which surrounds the substrate support surface and which is surrounded by the edge ring in the radial direction, is configured to insulate the edge ring from the baseplate. Incorporation of the edge ring assembly around the substrate support surface can decrease the buildup of polymer at the underside and along the edge of a substrate and increase plasma etching uniformity of the substrate.

    Abstract translation: 边缘环组件围绕等离子体蚀刻室中的衬底支撑表面。 边缘环组件包括边缘环和介电间隔环。 围绕基板支撑表面并且在径向方向上被边缘环围绕的电介质间隔环被配置为使边缘环与基板隔离。 将边缘环组件结合在衬底支撑表面周围可以减少聚合物在衬底的下侧和沿着衬底的边缘的堆积并且增加衬底的等离子体刻蚀均匀性。

    YTTRIA INSULATOR RING FOR USE INSIDE A PLASMA CHAMBER
    6.
    发明申请
    YTTRIA INSULATOR RING FOR USE INSIDE A PLASMA CHAMBER 审中-公开
    YTTRIA绝缘子环用于等离子体室内

    公开(公告)号：WO2006026110A3

    公开(公告)日：2007-04-26

    申请号：PCT/US2005028571

    申请日：2005-08-12

    Applicant: LAM RES CORP ,  KADKHODAYAN BABAK ,  DHINDSA RAJINDER ,  FU YUEHONG

    Inventor： KADKHODAYAN BABAK ,  DHINDSA RAJINDER ,  FU YUEHONG

    IPC: H01L21/3065

    CPC classification number: C04B35/505 ,  C04B2235/725 ,  C04B2235/728 ,  C04B2235/77 ,  C04B2235/9692 ,  H01J37/32642 ,  H01J2237/0206 ,  Y10T29/4973

    Abstract: A yttria insulator ring for use in a plasma processing apparatus is provided to minimize arcing between the apparatus and a ground extension, while also increasing a mean time between cleanings (MTBC). The yttria insulator ring may be located between a ground extension and a plasma generation zone, or gap, of the chamber of the apparatus, as well as between an edge ring and the ground extension. Compared to a quartz ring, the yttria insulator ring can also provide improved semiconductor substrate uniformity because of improved RF coupling as a result of decreased reactivity and increased dielectric constant.

    Abstract translation: 提供用于等离子体处理装置的氧化钇绝缘体环，以最小化装置和地面延伸部之间的电弧，同时也增加清洗之间的平均时间（MTBC）。 氧化钇绝缘体环可以位于设备的室的接地延伸部和等离子体产生区域或间隙之间，以及边缘环和接地延伸部之间。 与石英环相比，氧化钇绝缘体环也可以提供改善的半导体衬底均匀性，因为由于反应性降低和介电常数增加导致RF耦合改善。

    CLAMPED SHOWERHEAD ELECTRODE ASSEMBLY
    7.
    发明申请
    CLAMPED SHOWERHEAD ELECTRODE ASSEMBLY 审中-公开
    夹紧式淋浴电极组件

    公开(公告)号：WO2010005541A3

    公开(公告)日：2010-04-22

    申请号：PCT/US2009003953

    申请日：2009-07-06

    Applicant: LAM RES CORP ,  KADKHODAYAN BABAK ,  DHINDSA RAJINDER ,  DE LA LLERA ANTHONY ,  KELLOGG MICHAEL C

    Inventor： KADKHODAYAN BABAK ,  DHINDSA RAJINDER ,  DE LA LLERA ANTHONY ,  KELLOGG MICHAEL C

    IPC: H05H1/34 ,  H01L21/3065 ,  H05H1/38

    CPC classification number: H01J37/32532 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32605

    Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which includes an inner electrode mechanically attached to a backing plate by a clamp ring and an outer electrode attached to the backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release cam pins extending upward from the upper face of the outer electrode. To compensate for differential thermal expansion, the clamp ring can include expansion joins at spaced locations which allow the clamp ring to absorb thermal stresses.

    Abstract translation: 用于等离子体反应室的电极组件，用于半导体衬底处理。 组件包括上喷头电极，其包括通过夹紧环机械连接到背板的内电极和通过一系列间隔开的凸轮锁附接到背板的外电极。 防护环围绕背板并且可移动到保护环中的开口与背板中的开口对准的位置，使得凸轮锁可以用工具旋转以释放从外部的上表面向上延伸的凸轮销 电极。 为了补偿差分热膨胀，夹紧环可以包括在间隔位置处的膨胀接合，这允许夹紧环吸收热应力。

    PRETREATED GAS DISTRIBUTION PLATE
    9.
    发明申请
    PRETREATED GAS DISTRIBUTION PLATE 审中-公开
    预制气体分配板

    公开(公告)号：WO0124216A3

    公开(公告)日：2002-09-26

    申请号：PCT/US0026637

    申请日：2000-09-27

    Applicant: LAM RES CORP

    Inventor： RICCI ANTHONY J ,  KADKHODAYAN BABAK

    IPC: H05H1/46 ,  H01J37/32 ,  H01L21/3065

    CPC classification number: H01J37/3244 ,  H01J2237/022

    Abstract: A gas distribution plate (GDP) GDP is pretreated before implementation in a semiconductor fabrication apparatus so as to be stable over the operational lifetime of the GDP. The pre-treatment acts to reduce undesired reactions of the GDP with process chemistry used in the semiconductor fabrication apparatus. The pre-treatment is applied to at least a portion of the gas distribution plate. Preferably, surfaces of the gas distribution plate which come in contact with the process chemistry are pretreated.

    Abstract translation: 在半导体制造设备实施前，预计燃气配电板（GDP）GDP将在国内生产总值的使用寿命内稳定。 预处理用于减少GDP与半导体制造装置中使用的工艺化学品的不期望的反应。 预处理被施加到气体分配板的至少一部分。 优选地，与处理化学品接触的气体分配板的表面被预处理。

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