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    METHOD FOR RESIST STRIP IN PRESENCE OF REGULAR LOW K AND/OR POROUS LOW K DIELECTRIC MATERIALS
    1.
    发明申请
    METHOD FOR RESIST STRIP IN PRESENCE OF REGULAR LOW K AND/OR POROUS LOW K DIELECTRIC MATERIALS 审中-公开
    常规低K和/或多孔低介电材料存在的耐腐蚀条纹方法

    公开(公告)号：WO2006122119A3

    公开(公告)日：2007-06-21

    申请号：PCT/US2006017917

    申请日：2006-05-08

    Applicant: LAM RES CORP

    Inventor： ZHU HELEN ,  SADJADI REZA

    IPC: H01L21/461

    CPC classification number: H01L21/31138 ,  G03F7/427 ,  H01L21/02063

    Abstract: A two-step process is disclosed for stripping photoresist material from a substrate, wherein the substrate includes a low k dielectric material underlying the photoresist material and a polymer film overlying both the photoresist material and the low k dielectric material. The first step of the two-step process uses an oxygen plasma to remove the polymer film. The second step of the two-step process uses an ammonia plasma to remove the photoresist material, wherein the second step commences after completion of the first step. Each step of the two-step photoresist stripping process is respectively defined by particular values for process parameters including chemistry, temperature, pressure, gas flow rate, radio frequency power and frequency, and duration.

    Abstract translation: 公开了用于从基底剥离光致抗蚀剂材料的两步法，其中所述基底包括位于光致抗蚀剂材料下方的低k电介质材料和覆盖光致抗蚀剂材料和低k电介质材料的聚合物膜。 两步法的第一步使用氧等离子体去除聚合物膜。 两步法的第二步骤使用氨等离子体去除光致抗蚀剂材料，其中第二步骤在第一步骤完成之后开始。 两步光刻胶剥离工艺的每个步骤分别由工艺参数的特定值定义，包括化学，温度，压力，气体流速，射频功率和频率以及持续时间。

    METHOD FOR RESIST STRIP IN PRESENCE OF REGULAR LOW K AND/OR POROUS LOW K DIELECTRIC MATERIALS
    3.
    发明公开
    METHOD FOR RESIST STRIP IN PRESENCE OF REGULAR LOW K AND/OR POROUS LOW K DIELECTRIC MATERIALS 有权
    方法在正常和/或多孔介质材料具有低K值存在下分离PHOTO PAINT

    公开(公告)号：EP1880414A4

    公开(公告)日：2008-07-16

    申请号：EP06752442

    申请日：2006-05-08

    Applicant: LAM RES CORP

    Inventor： ZHU HELEN ,  SADJADI REZA

    IPC: H01L21/02 ,  G03F7/42 ,  H01L21/311

    CPC classification number: H01L21/31138 ,  G03F7/427 ,  H01L21/02063

    Abstract: A two-step process is disclosed for stripping photoresist material from a substrate, wherein the substrate includes a low k dielectric material underlying the photoresist material and a polymer film overlying both the photoresist material and the low k dielectric material. The first step of the two-step process uses an oxygen plasma to remove the polymer film. The second step of the two-step process uses an ammonia plasma to remove the photoresist material, wherein the second step commences after completion of the first step. Each step of the two-step photoresist stripping process is respectively defined by particular values for process parameters including chemistry, temperature, pressure, gas flow rate, radio frequency power and frequency, and duration.

    APPARATUS AND METHOD FOR CONTROLLING PLASMA POTENTIAL
    5.
    发明申请
    APPARATUS AND METHOD FOR CONTROLLING PLASMA POTENTIAL 审中-公开
    用于控制等离子体潜能的装置和方法

    公开(公告)号：WO2008008259A2

    公开(公告)日：2008-01-17

    申请号：PCT/US2007015509

    申请日：2007-07-06

    Applicant: LAM RES CORP ,  KEIL DOUGLAS ,  LI LUMIN ,  SADJADI REZA ,  HUDSON ERIC ,  LENZ ERIC ,  DHINDSA RAJINDER

    Inventor： KEIL DOUGLAS ,  LI LUMIN ,  SADJADI REZA ,  HUDSON ERIC ,  LENZ ERIC ,  DHINDSA RAJINDER

    IPC: C23F1/00 ,  C23C16/00

    CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32532

    Abstract: An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The upper electrode is disposed above the lower electrode and is electrically isolated from the chamber. A voltage source is connected to the upper electrode. The voltage source is defined to control an electric potential of the upper electrode relative to the chamber. The electric potential of the upper electrode as controlled by the voltage source is capable of influencing an electric potential of the plasma to be generated between the lower and upper electrodes.

    Abstract translation: 提供了一种用于半导体晶片等离子体处理的装置。 该装置包括具有下电极和设置在其中的上电极的腔室。 下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。 上电极设置在下电极的上方，并与腔电隔离。 电压源连接到上电极。 电压源被定义为控制上电极相对于腔室的电位。 由电压源控制的上电极的电位能够影响在下电极和上电极之间产生的等离子体的电位。

    GAS DISTRIBUTION SYSTEM HAVING FAST GAS SWITCHING CAPABILITIES
    6.
    发明申请
    GAS DISTRIBUTION SYSTEM HAVING FAST GAS SWITCHING CAPABILITIES 审中-公开
    具有快速气体切换能力的气体分配系统

    公开(公告)号：WO2005112093A3

    公开(公告)日：2007-01-11

    申请号：PCT/US2005013582

    申请日：2005-04-22

    Applicant: LAM RES CORP ,  HUANG ZHISONG ,  SAM JOSE TONG ,  LENZ ERIC ,  DHINDSA RAJINDER ,  SADJADI REZA

    Inventor： HUANG ZHISONG ,  SAM JOSE TONG ,  LENZ ERIC ,  DHINDSA RAJINDER ,  SADJADI REZA

    IPC: C23F1/00 ,  H01L21/306

    CPC classification number: C23C16/45561 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

    Abstract: A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows. The switching section preferably includes fast switching valves operable to quickly open and close to allow fast switching of the first and second gases, preferably without the occurrence of undesirable pressure surges or flow instabilities in the flow of either gas.

    Abstract translation: 提供了一种用于向诸如等离子体处理装置的等离子体处理室之类的室提供不同气体组成的气体分配系统。 气体分配系统可以包括气体供应部，流量控制部和切换部。 气体供应部分将第一和第二气体（通常为气体混合物）提供给流量控制部分，该控制部分控制第一和第二气体流到室的流动。 腔室可以包括多个区域，并且流量控制部分可以以期望的气体流量比将第一和第二气体供应到多个区域。 气体分配系统可以将第一和第二气体连续地供应到切换部分，并且切换部分可操作地切换第一和第二气体的流动，使得第一和第二处理气体中的一个被供应到腔室，而 第一和第二气体中的另一个被供应到旁路管线，然后切换气体流。 切换部分优选地包括可操作以快速打开和关闭的快速切换阀，以允许第一和第二气体的快速切换，优选地，在任一种气体的流动中不会出现不期望的压力波动或流动不稳定性。

    APPARATUS AND METHOD FOR CONTROLLING PLASMA POTENTIAL
    8.
    发明专利
    APPARATUS AND METHOD FOR CONTROLLING PLASMA POTENTIAL 未知

    公开(公告)号：SG10201500055UA

    公开(公告)日：2015-02-27

    申请号：SG10201500055U

    申请日：2007-07-06

    Applicant: LAM RES CORP

    Inventor： KEIL DOUGLAS ,  LI LUMIN ,  SADJADI REZA ,  HUDSON ERIC ,  LENZ ERIC ,  DHINDSA RAJINDER

    Abstract: A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.

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