公开(公告)号：SG11201907625UA

公开(公告)日：2019-09-27

申请号：SG11201907625U

申请日：2018-02-26

Applicant: LAM RES CORP

Inventor： FISCHER ANDREAS ,  LILL THORSTEN ,  JANEK RICHARD

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: OO\ O N O N O (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 30 August 2018 (30.08.2018) WIP0 I PCT onion °nolo loomoiloimoliflom (10) International Publication Number WO 2018/157090 Al (51) International Patent Classification: H01L 21/3065 (2006.01) H01L 21/3213 (2006.01) H01L 21/311 (2006.01) (21) International Application Number: PCT/US2018/019784 (22) International Filing Date: 26 February 2018 (26.02.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/464,360 27 February 2017 (27.02.2017) US 15/615,691 06 June 2017 (06.06.2017) US (71) Applicant: LAM RESEARCH CORPORATION [US/US]; 4650 Cushing Parkway, Fremont, CA 94538 (US). (72) Inventors: FISCHER, Andreas; 4650 Cushing Parkway, Fremont, CA 94538 (US). LILL, Thorsten; 4650 Cush- ing Parkway, Fremont, CA 94538 (US). JANEK, Richard; 4650 Cushing Parkway, Fremont, CA 94538 (US). (74) Agent: LEE, David, F.; Martine Penilla Group, Llp, 710 Lakeway Drive, Suite 200, Sunnyvale, CA 94085 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, (54) Title: CONTROL OF DIRECTIONALITY IN ATOMIC LAYER ETCHING A1 2 0 3 ATOP OF 100nm TEOS FLUORINATION 0-BIAS PLASMA LIGAND EXCHANGE Sn(acac) 2 VAPOR PUMP-OUT PLASMA TREATMENT CHAMBER VAPOR TREATMENT CHAMBER FIG. 3 (57) : A method for performing atomic layer etching (ALE) on a substrate is provided, including the following operations: performing a surface modification operation on a substrate surface, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer, wherein a bias voltage is applied during the surface modification operation, the bias voltage configured to control a depth of the substrate surface that is converted by the surface modification operation; performing a removal operation on the substrate surface, the removal operation configured to remove at least a portion of the modified layer from the substrate surface, wherein removing the portion of the modified layer is effected via a ligand exchange reaction that is configured to volatilize the portion of the modified layer. A plasma treatment can be performed to remove residues from the substrate surface following the removal operation. [Continued on next page] WO 2018/157090 Al I IIIII IIIIIIII II 111111 VIII IIIII VIII IIIII 31100111HOMOVOIS MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))