Abstract:
The present invention includes a system and method for confining plasma within a plasma processing chamber. The plasma processing apparatus comprises a first electrode (152), a power generator (154), a second electrode (156), at least one confinement ring (166), and a ground extension (160) surrounding the first electrode (152). The first electrode (152) is configured to receive a workpiece and has an associated first electrode area. The power generator (154) is operatively coupled to the first electrode (152), and the power generator (154) is configured to generate RF power that is communicated to the first electrode (152). The second electrode (156) is disposed at a distance from the first electrode (152). The second electrode (156) is configured to provide a complete electrical circuit for RF power communicated from the first electrode (152). Additionally, the second electrode (156) has a second electrode area that is greater than the first electrode area. At least one confinement ring (166) is configured to assist confine the plasma.
Abstract:
A plasma processing system for processing at least a substrate with plasma. The plasma processing chamber is capable of controlling ion energy distribution. The plasma processing system may include a first electrode. The plasma processing system also includes a second electrode that is different from the first electrode and is configured for bearing the substrate. The plasma processing system may also include a signal source coupled with the first electrode. The signal source may provide a non-sinusoidal signal through the first electrode to control ion energy distribution at the substrate when the substrate is processed in the plasma processing system, wherein the non-sinusoidal signal is periodic.
Abstract:
A plasma processing system for use with a gas. The plasma processing system comprises a first electrode, a second electrode, a gas input port, a power source and a passive circuit. The gas input port is operable to provide the gas between the first electrode and the second electrode. The power source is operable to ignite plasma from the gas between the first electrode and the second electrode. The passive circuit is coupled to the second electrode and is configured to adjust one or more of an impedance, a voltage potential, and a DC bias potential of the second electrode. The passive radio frequency circuit comprises a capacitor arranged in parallel with an inductor.
Abstract:
PROBLEM TO BE SOLVED: To provide a multi-part upper electrode for a semiconductor processing reactor with a replaceable portion and a method of replacing a portion of the electrode.SOLUTION: A replaceable electrode comprises: a ring shaped backing plate 116; a plurality of electrode segments 114 forming a ring shaped electrode; an electrically conductive elastomer securing the plurality of electrode segments 114 to the ring shaped backing plate 116, in which the plurality of electrode segments 114 form a ring having an inner diameter of about 12 inches (30.48 centimeter) and an inner edge 140 with an inclined surface, and the ring shaped backing plate 116 can be attached onto a top plate 118 in a plasma reaction chamber with a plurality of threaded screws 134, 136 extending into the ring shaped backing plate 116 from the back surface of the top pate 118.