公开(公告)号：SG10201608573XA

公开(公告)日：2016-12-29

申请号：SG10201608573X

申请日：2013-04-02

Applicant: LAM RES CORP

Inventor： GUHA JOYDEEP ,  MARKS JEFFREY ,  JINNAI BUTSURIN

Abstract: A method for etching a metal layer dispose below a mask is provided. The metal layer is placed in an etch chamber. A precursor gas is flowed into the etch chamber. The precursor gas is adsorbed into the metal layer to form a precursor metal complex. The precursor metal complex is heated to a temperature above a vaporization temperature of the precursor metal complex, while the metal layer is exposed to the precursor gas. The vaporized precursor metal complex is exhausted from the etch chamber.

公开(公告)号：SG11201406233VA

公开(公告)日：2014-10-30

申请号：SG11201406233V

申请日：2013-04-02

Applicant: LAM RES CORP

Inventor： GUHA JOYDEEP ,  MARKS JEFFREY ,  JINNAI BUTSURIN

IPC: H01L21/3065 ,  H01L21/8247 ,  H01L27/115

Abstract: A method for etching a metal layer dispose below a mask is provided. The metal layer is placed in an etch chamber. A precursor gas is flowed into the etch chamber. The precursor gas is adsorbed into the metal layer to form a precursor metal complex. The precursor metal complex is heated to a temperature above a vaporization temperature of the precursor metal complex, while the metal layer is exposed to the precursor gas. The vaporized precursor metal complex is exhausted from the etch chamber.