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    REDUCTION OF ETCH MASK FEATURE CRITICAL DIMENSIONS
    2.
    发明申请
    REDUCTION OF ETCH MASK FEATURE CRITICAL DIMENSIONS 审中-公开
    减少蚀刻特征的关键尺寸

    公开(公告)号：WO2006065630A3

    公开(公告)日：2007-04-12

    申请号：PCT/US2005044505

    申请日：2005-12-06

    Applicant: LAM RES CORP ,  HUANG ZHISONG ,  SADJADI S M REZA ,  MARKS JEFFREY

    Inventor： HUANG ZHISONG ,  SADJADI S M REZA ,  MARKS JEFFREY

    IPC: H01L21/311 ,  H01L21/00 ,  H01L21/308

    CPC classification number: H01L21/67069 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144

    Abstract: A method for forming features in an etch layer in an etch stack with an etch mask over the etch layer, wherein the etch mask has etch mask features with sidewalls, where the etch mask features have a first critical dimension, is provided. A cyclical critical dimension reduction is performed to form deposition layer features with a second critical dimension, which is less than the first critical dimension. Each cycle, comprises a depositing phase for depositing a deposition layer over the exposed surfaces, including the vertical sidewalls, of the etch mask features and an etching phase for etching back the deposition layer leaving a selective deposition on the vertical sidewalls. Features are etched into the etch layer, wherein the etch layer features have a third critical dimension, which is less than the first critical dimension.

    Abstract translation: 一种用于在蚀刻层上的蚀刻层中形成蚀刻层中的特征的方法，其中蚀刻掩模具有带侧壁的蚀刻掩模特征，其中蚀刻掩模特征具有第一临界尺寸。 执行周期性临界尺寸降低以形成具有小于第一临界尺寸的第二临界尺寸的沉积层特征。 每个循环包括沉积相，用于在包括垂直侧壁的蚀刻掩模特征的暴露表面上沉积沉积层，以及用于蚀刻回沉积层的蚀刻阶段，在垂直侧壁上留下选择性沉积。 将特征蚀刻到蚀刻层中，其中蚀刻层特征具有小于第一临界尺寸的第三临界尺寸。

    METHOD AND APPARATUS FOR DETECTING ENDPOINT DURING PLASMA ETCHING OF THIN FILMS
    4.
    发明申请
    METHOD AND APPARATUS FOR DETECTING ENDPOINT DURING PLASMA ETCHING OF THIN FILMS 审中-公开
    检测薄膜等离子蚀刻中端点的方法和装置

    公开(公告)号：WO2004038788A2

    公开(公告)日：2004-05-06

    申请号：PCT/US0333706

    申请日：2003-10-22

    Applicant: LAM RES CORP ,  MCMILLIN BRIAN K ,  HUDSON ERIC ,  MARKS JEFFREY

    Inventor： MCMILLIN BRIAN K ,  HUDSON ERIC ,  MARKS JEFFREY

    IPC: H01L21/311 ,  H01L21/66 ,  H01L21/768

    CPC classification number: H01L21/76829 ,  H01J37/32963 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76801 ,  H01L21/76807 ,  H01L22/26

    Abstract: A method for controlling a plasma etch process while etching a layer stack having a first layer disposed above an end-point generating layer is disclosed. Method includes etching through first layer and at least partially through end-point generating layer while monitoring an absorption rate of a light beam traversing an interior portion of the plasma processing chamber, wherein the end-point generating layer is selected from material that produces a detectable change in absorption rate when etched. The end-point generating layer is characterized by at least one of a first characteristic and a second characteristic. The first characteristic is an insufficient thickness to function as an etch stop layer, and the second characteristic is an insufficient selectivity to etchants employed to etch through the first layer to function as the etch stop layer. The method additionally includes generating an end-point signal upon detecting the detectable change.

    Abstract translation: 公开了一种用于控制等离子体蚀刻工艺同时蚀刻具有设置在终点产生层上方的第一层的叠层的方法。 方法包括蚀刻穿过第一层并且至少部分地通过端点产生层，同时监测穿过等离子体处理室的内部部分的光束的吸收率，其中终点产生层选自产生可检测 蚀刻时吸收率的变化。 终点产生层的特征在于第一特征和第二特征中的至少一个。 第一特征是厚度不足以用作蚀刻停止层，并且第二特征是对蚀刻穿过第一层以用作蚀刻停止层的蚀刻剂的选择性不足。 该方法还包括在检测到可检测到的变化时生成终点信号。

    AN ENHANCED RESIST STRIP IN A DIELECTRIC ETCHER USING DOWNSTREAM PLASMA
    5.
    发明申请
    AN ENHANCED RESIST STRIP IN A DIELECTRIC ETCHER USING DOWNSTREAM PLASMA 审中-公开
    使用下水平等级的电介质蚀刻机中的增强电阻条

    公开(公告)号：WO0175932A3

    公开(公告)日：2002-03-14

    申请号：PCT/US0108668

    申请日：2001-03-16

    Applicant: LAM RES CORP ,  MARKS JEFFREY

    Inventor： MARKS JEFFREY

    IPC: H05H1/46 ,  G03F7/42 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311

    CPC classification number: H01J37/32082 ,  G03F7/427 ,  H01J37/32357 ,  H01J2237/3342 ,  H01L21/31138

    Abstract: A method and apparatus for performing a dielectric etch, etch mask stripping, and etch chamber clean. A wafer is placed in an etch chamber. A dielectric etch is performed on the wafer using an in situ plasma generated by an in situ plasma device in the etch chamber. The etch mask is stripped using a remote plasma generated in a remote plasma device connected to the etch chamber. The wafer is removed from the etch chamber and either the in situ plasma or the remote plasma may be used to clean the etch chamber. In etch chambers that do not use confinement rings, a heater may be used to heat the etch chamber wall to provide improved cleaning.

    Abstract translation: 用于执行电介质蚀刻，蚀刻掩模剥离和蚀刻室清洁的方法和装置。 将晶片放置在蚀刻室中。 使用在蚀刻室中由原位等离子体装置产生的原位等离子体在晶片上进行电介质蚀刻。 使用在连接到蚀刻室的远程等离子体装置中产生的远程等离子体来剥离蚀刻掩模。 晶片从蚀刻室中移除，原位等离子体或远程等离子体可用于清洁蚀刻室。 在不使用限制环的蚀刻室中，可以使用加热器来加热蚀刻室壁以提供改进的清洁。

    SUBSTRATE PROCESSING SYSTEM WITH MULTIPLE PROCESSING DEVICES DEPLOYED IN SHARED AMBIENT EMVIRONMENT AND ASSOCIATED METHODS
    6.
    发明申请
    SUBSTRATE PROCESSING SYSTEM WITH MULTIPLE PROCESSING DEVICES DEPLOYED IN SHARED AMBIENT EMVIRONMENT AND ASSOCIATED METHODS 审中-公开
    具有共同周围环境中部署的多个处理设备的基板处理系统及相关方法

    公开(公告)号：WO2012047531A3

    公开(公告)日：2012-06-28

    申请号：PCT/US2011052727

    申请日：2011-09-22

    Applicant: LAM RES CORP ,  HEMKER DAVID J ,  SHEET LUBAB L ,  MARKS JEFFREY

    Inventor： HEMKER DAVID J ,  SHEET LUBAB L ,  MARKS JEFFREY

    IPC: B65G49/07 ,  H01L21/00

    CPC classification number: H01L21/3065 ,  C23C16/54 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/67051 ,  H01L21/67173 ,  H01L21/6776 ,  H01L21/68764 ,  H01L21/68771

    Abstract: A plurality of substrate processing devices are disposed in a separated manner within a shared ambient environment. A conveyance device is disposed within the shared ambient environment and is defined to move a substrate through and between each of the substrate processing devices in a continuous manner. Some substrate processing devices are defined to perform dry substrate processing operations in which an energized reactive environment is created in exposure to the substrate in an absence of liquid material. Some substrate processing devices are defined to perform wet substrate processing operations in which at least one material in a liquid state is applied to the substrate. In one embodiment, a complementary pair of dry and wet substrate processing devices are disposed in the shared ambient environment in a sequential manner relative to movement of the substrate by the conveyance device.

    Abstract translation: 多个基板处理装置以分离的方式设置在共享的周围环境中。 传送装置设置在共享的周围环境内并且被限定为以连续的方式移动基板穿过并且在每个基板处理装置之间。 一些基板处理设备被定义为执行干式基板处理操作，其中在没有液体材料的情况下暴露于基板时产生通电的反应性环境。 定义一些基板处理装置以执行湿式基板处理操作，其中将至少一种液态材料施加到基板。 在一个实施例中，干式和湿式衬底处理装置的互补对以相对于由输送装置移动衬底的顺序方式布置在共享的周围环境中。

    APPARATUS AND METHODS FOR OPTIMIZING CLEANING OF PATTERNED SUBSTRATES
    7.
    发明申请
    APPARATUS AND METHODS FOR OPTIMIZING CLEANING OF PATTERNED SUBSTRATES 审中-公开
    优化图案清洗清洗装置及方法

    公开(公告)号：WO2009051763A2

    公开(公告)日：2009-04-23

    申请号：PCT/US2008011830

    申请日：2008-10-15

    Applicant: LAM RES CORP ,  DE LARIOS JOHN M ,  FREER ERIK M ,  RAVKIN MICHAEL ,  MARKS JEFFREY

    Inventor： DE LARIOS JOHN M ,  FREER ERIK M ,  RAVKIN MICHAEL ,  MARKS JEFFREY

    IPC: H01L21/302

    CPC classification number: H01L21/02057 ,  H01L21/67051

    Abstract: Methods and apparatus for cleaning wafer surfaces are provided, especially for cleaning surfaces of patterned wafers. The cleaning apparatus includes a cleaning head with channels on the surface facing the patterned wafer, which has a predominant pattern. Cleaning material flowing the channels exerts a shear force on the surface of a patterned wafer, which is oriented in a specific direction to the cleaning head. The shear force and the specific orientation between the patterned wafer and the cleaning head improve the removal efficiency of the surface contaminants.

    Abstract translation: 提供了用于清洁晶片表面的方法和装置，特别是用于清洁图案化晶片的表面。 清洁装置包括清洁头，该清洁头在面向图案化晶片的表面上具有通道，其具有主要图案。 流动通道的清洁材料在图案化晶片的表面上施加剪切力，该图案化晶片的面向清洁头的特定方向。 图案化晶片和清洁头之间的剪切力和特定取向提高了表面污染物的去除效率。

    ATOMIC LAYER ETCHING OF TUNGSTEN AND OTHER METALS
    8.
    发明专利
    ATOMIC LAYER ETCHING OF TUNGSTEN AND OTHER METALS 未知

    公开(公告)号：SG10201606891SA

    公开(公告)日：2017-03-30

    申请号：SG10201606891S

    申请日：2016-08-18

    Applicant: LAM RES CORP

    Inventor： YANG WENBING ,  TAN SAMANTHA ,  KANARIK KEREN JACOBS ,  MARKS JEFFREY ,  KIM TAESEUNG ,  SHEN MEIHUA ,  LILL THORSTEN

    Abstract: Provided herein are methods of atomic layer etching (ALE) of metals including tungsten (W) and cobalt (Co). The methods disclosed herein provide precise etch control down to the atomic level, with etching a low as 1 Å to 10 Å per cycle in some embodiments. In some embodiments, directional control is provided without damage to the surface of interest. The methods may include cycles of a modification operation to form a reactive layer, followed by a removal operation to etch only this modified layer. The modification is performed without spontaneously etching the surface of the metal.

    METHOD AND APPARATUS FOR DETECTING ENDPOINT DURING PLASMA ETCHING OF THIN FILMS
    10.
    发明专利
    METHOD AND APPARATUS FOR DETECTING ENDPOINT DURING PLASMA ETCHING OF THIN FILMS 未知

    公开(公告)号：AU2003284890A1

    公开(公告)日：2004-05-13

    申请号：AU2003284890

    申请日：2003-10-22

    Applicant: LAM RES CORP

    Inventor： MARKS JEFFREY ,  MCMILLIN BRIAN K ,  HUDSON ERIC

    IPC: H01L21/311 ,  H01L21/66 ,  H01L21/768

    Abstract: A method for controlling a plasma etch process while etching a layer stack having a first layer disposed above an end-point generating layer is disclosed. The method includes etching through the first layer and at least partially through the end-point generating layer while monitoring an absorption rate of a light beam traversing an interior portion of the plasma processing chamber, wherein the end-point generating layer is selected from a material that produces a detectable change in the absorption rate when etched. The end-point generating layer is characterized by at least one of a first characteristic and a second characteristic. The first characteristic is an insufficient thickness to function as an etch stop layer, and the second characteristic is an insufficient selectivity to etchants employed to etch through the first layer to function as the etch stop layer. The method additionally includes generating an end-point signal upon detecting the detectable change.

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