公开(公告)号：WO2011026127A3

公开(公告)日：2011-06-03

申请号：PCT/US2010047376

申请日：2010-08-31

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  KELLOG MIKE ,  KADKODYAN BABAK ,  BAILEY ANDREW

Inventor： DHINDSA RAJINDER ,  KELLOG MIKE ,  KADKODYAN BABAK ,  BAILEY ANDREW

IPC: H05H1/46 ,  C23C16/50 ,  H01L21/3065

CPC classification number: H01J37/32642 ,  H01J37/32623

Abstract: An arrangement for performing pressure control within a processing chamber substrate processing is provided. The arrangement includes a peripheral ring configured at least for surrounding a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The peripheral ring includes a plurality of slots that is configured at least for exhausting processed byproduct gas from the confined chamber volume during substrate processing. The arrangement also includes a conductive control ring that is positioned next to the peripheral ring and is configured to include plurality of slots. The pressure control is achieved by moving the conductive control ring relative to the peripheral ring such that a first slot on the peripheral ring and a second slot on the conductive control ring are offset with respect to one another in a range of zero offset to full offset.

Abstract translation: 提供了一种用于在处理室衬底处理中执行压力控制的装置。 该装置包括至少围绕限制室容积配置的外围环，该限定室容积被配置为在衬底处理期间维持用于刻蚀衬底的等离子体。 周边环包括多个狭槽，其被构造成至少在衬底处理期间从受限腔体积中排出经处理的副产物气体。 该布置还包括导电控制环，该导电控制环位于外围环旁边并且被配置为包括多个狭槽。 通过相对于外围环移动导电控制环来实现压力控制，使得外围环上的第一槽和导电控制环上的第二槽相对于彼此在零偏移到全偏移的范围内彼此偏移 。

公开(公告)号：SG10201405040PA

公开(公告)日：2014-10-30

申请号：SG10201405040P

申请日：2010-08-31

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  KELLOG MIKE ,  KADKODYAN BABAK ,  BAILEY ANDREW

公开(公告)号：SG178287A1

公开(公告)日：2012-03-29

申请号：SG2012008306

申请日：2010-08-31

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  KELLOG MIKE ,  KADKODYAN BABAK ,  BAILEY ANDREW

Abstract: An arrangement for performing pressure control within a processing chamber substrate processing is provided. The arrangement includes a peripheral ring configured at least for surrounding a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The peripheral ring includes a plurality of slots that is configured at least for exhausting processed byproduct gas from the confined chamber volume during substrate processing. The arrangement also includes a conductive control ring that is positioned next to the peripheral ring and is configured to include plurality of slots. The pressure control is achieved by moving the conductive control ring relative to the peripheral ring such that a first slot on the peripheral ring and a second slot on the conductive control ring are offset with respect to one another in a range of zero offset to full offset.