公开(公告)号：EP2417625A4

公开(公告)日：2015-12-02

申请号：EP10762274

申请日：2010-04-06

Applicant: LAM RES CORP

Inventor： MARAKHTANOV ALEXEI ,  HUDSON ERIC ,  DHINDSA RAJINDER ,  BAILEY ANDREW

IPC: H01L21/3065 ,  H01J37/32 ,  H05H1/24 ,  H05H1/36

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/32137 ,  H01J37/32146 ,  H01J2237/334 ,  H01J2237/3348

公开(公告)号：WO2011028600A3

公开(公告)日：2011-06-23

申请号：PCT/US2010046790

申请日：2010-08-26

Applicant: LAM RES CORP ,  JUCO ELLER Y ,  SHIN NEUNGHO ,  KIM YUNSANG ,  BAILEY ANDREW

Inventor： JUCO ELLER Y ,  SHIN NEUNGHO ,  KIM YUNSANG ,  BAILEY ANDREW

IPC: H01L21/3065

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32706 ,  H01J2237/334

Abstract: An arrangement for controlling bevel etch rate during plasma processing within a processing chamber. The arrangement includes a power source and a gas distribution system. The arrangement also includes a lower electrode, which is configured at least for supporting a substrate. The arrangement further includes a top ring electrode positioned above the substrate and a bottom ring electrode positioned below the substrate. The arrangement yet also includes a first match arrangement coupled to the top ring electrode and configured at least for controlling current flowing through the top ring electrode to control amount of plasma available for etching at least a part of the substrate top edge. The arrangement yet further includes a second match arrangement configured to control the current flowing through the bottom ring electrode to control amount of plasma available for at least etching at least a part of the substrate bottom edge.

Abstract translation: 一种用于在处理室内的等离子体处理期间控制斜面蚀刻速率的装置。 该装置包括电源和气体分配系统。 该布置还包括下电极，其被配置为至少用于支撑衬底。 该布置还包括位于基板上方的顶环电极和位于基板下方的底环电极。 该布置还包括耦合到顶环电极并且被配置为至少用于控制流过顶环电极的电流以控制可用于蚀刻衬底顶部边缘的至少一部分的等离子体的第一匹配布置。 该装置还包括第二匹配装置，其被配置为控制流过底环电极的电流以控制可用于至少蚀刻至少一部分衬底底边缘的等离子体的量。

公开(公告)号：WO2011026127A3

公开(公告)日：2011-06-03

申请号：PCT/US2010047376

申请日：2010-08-31

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  KELLOG MIKE ,  KADKODYAN BABAK ,  BAILEY ANDREW

Inventor： DHINDSA RAJINDER ,  KELLOG MIKE ,  KADKODYAN BABAK ,  BAILEY ANDREW

IPC: H05H1/46 ,  C23C16/50 ,  H01L21/3065

CPC classification number: H01J37/32642 ,  H01J37/32623

Abstract: An arrangement for performing pressure control within a processing chamber substrate processing is provided. The arrangement includes a peripheral ring configured at least for surrounding a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The peripheral ring includes a plurality of slots that is configured at least for exhausting processed byproduct gas from the confined chamber volume during substrate processing. The arrangement also includes a conductive control ring that is positioned next to the peripheral ring and is configured to include plurality of slots. The pressure control is achieved by moving the conductive control ring relative to the peripheral ring such that a first slot on the peripheral ring and a second slot on the conductive control ring are offset with respect to one another in a range of zero offset to full offset.

Abstract translation: 提供了一种用于在处理室衬底处理中执行压力控制的装置。 该装置包括至少围绕限制室容积配置的外围环，该限定室容积被配置为在衬底处理期间维持用于刻蚀衬底的等离子体。 周边环包括多个狭槽，其被构造成至少在衬底处理期间从受限腔体积中排出经处理的副产物气体。 该布置还包括导电控制环，该导电控制环位于外围环旁边并且被配置为包括多个狭槽。 通过相对于外围环移动导电控制环来实现压力控制，使得外围环上的第一槽和导电控制环上的第二槽相对于彼此在零偏移到全偏移的范围内彼此偏移 。

公开(公告)号：WO2010117969A3

公开(公告)日：2011-01-13

申请号：PCT/US2010030019

申请日：2010-04-06

Applicant: LAM RES CORP ,  MARAKHTANOV ALEXEI ,  HUDSON ERIC ,  DHINDSA RAJINDER ,  BAILEY ANDREW

Inventor： MARAKHTANOV ALEXEI ,  HUDSON ERIC ,  DHINDSA RAJINDER ,  BAILEY ANDREW

IPC: H01L21/3065 ,  H05H1/24 ,  H05H1/36

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/32137 ,  H01J37/32146 ,  H01J2237/334 ,  H01J2237/3348

Abstract: A method is provided for operating a processing system having a space therein arranged to receive a gas and an electromagnetic field generating portion operable to generate an electromagnetic field within the space. The method includes providing a gas into the space, and operating the electromagnetic field generating portion with a driving potential to generate an electromagnetic field within the space to transform at least a portion of the gas into plasma. The driving potential as a function of time is based on a first potential function portion and a second potential function portion. The first potential function portion comprises a first continuous periodic portion having a first amplitude and a first frequency. The second potential function portion comprises a second periodic portion having an maximum amplitude portion, and minimum amplitude portion and a duty cycle. The maximum amplitude portion is a higher amplitude than the minimum amplitude portion. The duty cycle is the ratio of a duration of the maximum amplitude portion to the sum of the duration of the maximum amplitude portion and the duration of the minimum amplitude portion. The second periodic portion additionally has a second frequency during the maximum amplitude portion. An amplitude modulation of the second periodic portion is phase locked to the first continuous periodic portion.

Abstract translation: 提供了一种操作处理系统的方法，该处理系统具有布置成接收气体的空间和可操作以在该空间内产生电磁场的电磁场产生部分。 所述方法包括向所述空间提供气体，以及利用驱动电位操作所述电磁场产生部分，以在所述空间内产生电磁场，以将所述气体的至少一部分转化为等离子体。 作为时间的函数的驱动电位基于第一潜在功能部分和第二电位功能部分。 第一潜在功能部分包括具有第一幅度和第一频率的第一连续周期部分。 第二电位功能部分包括具有最大振幅部分和最小振幅部分和占空比的第二周期部分。 最大幅度部分比最小振幅部分的幅度更大。 占空比是最大幅度部分的持续时间与最大振幅部分的持续时间和最小振幅部分的持续时间之和的比率。 第二周期部分在最大振幅部分期间另外具有第二频率。 第二周期部分的幅度调制被锁相到第一连续周期部分。

公开(公告)号：SG178287A1

公开(公告)日：2012-03-29

申请号：SG2012008306

申请日：2010-08-31

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  KELLOG MIKE ,  KADKODYAN BABAK ,  BAILEY ANDREW

Abstract: An arrangement for performing pressure control within a processing chamber substrate processing is provided. The arrangement includes a peripheral ring configured at least for surrounding a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The peripheral ring includes a plurality of slots that is configured at least for exhausting processed byproduct gas from the confined chamber volume during substrate processing. The arrangement also includes a conductive control ring that is positioned next to the peripheral ring and is configured to include plurality of slots. The pressure control is achieved by moving the conductive control ring relative to the peripheral ring such that a first slot on the peripheral ring and a second slot on the conductive control ring are offset with respect to one another in a range of zero offset to full offset.

公开(公告)号：AT394789T

公开(公告)日：2008-05-15

申请号：AT00978613

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW ,  SCHOEPP ALAN ,  HEMKER DAVID ,  WILCOXSON MARK

IPC: C23C16/507 ,  H01J37/32 ,  B05D7/24 ,  H01L21/3065

Abstract: A plasma processing system for processing a substrate, is disclosed. The plasma processing system includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing chamber includes a material that does not substantially react with the reactive gas chemistries that are delivered into the plasma processing chamber. In addition, the reactant gases that are flown into the plasma processing chamber are disclosed.

公开(公告)号：SG174501A1

公开(公告)日：2011-10-28

申请号：SG2011068269

申请日：2010-04-06

Applicant: LAM RES CORP

Inventor： MARAKHTANOV ALEXEI ,  HUDSON ERIC ,  DHINDSA RAJINDER ,  BAILEY ANDREW

Abstract: A method is provided for operating a processing system having a space therein arranged to receive a gas and an electromagnetic field generating portion operable to generate an electromagnetic field within the space. The method includes providing a gas into the space, and operating the electromagnetic field generating portion with a driving potential to generate an electromagnetic field within the space to transform at least a portion of the gas into plasma. The driving potential as a function of time is based on a first potential function portion and a second potential function portion. The first potential function portion comprises a first continuous periodic portion having a first amplitude and a first frequency. The second potential function portion comprises a second periodic portion having an maximum amplitude portion, and minimum amplitude portion and a duty cycle. The maximum amplitude portion is a higher amplitude than the minimum amplitude portion. The duty cycle is the ratio of a duration of the maximum amplitude portion to the sum of the duration of the maximum amplitude portion and the duration of the minimum amplitude portion. The second periodic portion additionally has a second frequency during the maximum amplitude portion. An amplitude modulation of the second periodic portion is phase locked to the first continuous periodic portion.

公开(公告)号：AT412250T

公开(公告)日：2008-11-15

申请号：AT00980409

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW ,  SCHOEPP ALAN ,  HEMKER DAVID ,  WILCOXSON MARK

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/3065

Abstract: A plasma processing system that includes a plasma processing chamber that provides enhanced control over an etch process is disclosed. The plasma processing chamber is connected to a gas flow system. The gas flow system can be employed to control the release of gases into different regions within the plasma processing chamber. In addition, the volume of the released gas, e.g., the flow rate of the gas, can be adjusted by a gas flow control mechanism. In this manner, both the position and the amount of the gas that is delivered to the plasma processing chamber can be controlled. The ability to adjust the position and the amount of gas that is released into the plasma processing chamber provides for a better control over the distribution of the neutral components. This in turn enhances control over the etching process.

公开(公告)号：SG10201405258YA

公开(公告)日：2014-10-30

申请号：SG10201405258Y

申请日：2010-08-26

Applicant: LAM RES CORP

Inventor： JUCO ELLER Y ,  SHIN NEUNGHO ,  KIM YUNSANG ,  BAILEY ANDREW

Abstract: Methods for controlling bevel etch rate of a substrate during plasma processing within a processing chamber includes securing the substrate on a lower electrode within the processing chamber. A power source is provided. A gas mixture is flowed into the processing chamber. A first match arrangement coupled to an upper electrode is adjusted to control current flowing through the upper electrode to change the upper electrode from a grounded state to a floating state. A second match arrangement coupled to a top ring electrode is adjusted to control current flowing through the top ring electrode so as to control plasma formed above a top edge of the substrate. An extension of the upper electrode is lowered during plasma processing so as to minimize a gap between the extension of the upper electrode and the substrate received on the lower electrode, such that the gap is incapable of supporting plasma formed in the processing chamber.

公开(公告)号：SG10201405040PA

公开(公告)日：2014-10-30

申请号：SG10201405040P

申请日：2010-08-31

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  KELLOG MIKE ,  KADKODYAN BABAK ,  BAILEY ANDREW