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公开(公告)号:WO03003448A2
公开(公告)日:2003-01-09
申请号:PCT/US0217663
申请日:2002-06-05
Applicant: LAM RES CORP , SEXTON GREG , SCHOEPP ALAN , KENNARD MARK ALLEN
Inventor: SEXTON GREG , SCHOEPP ALAN , KENNARD MARK ALLEN
IPC: H01L21/3065 , H01L21/00 , H01L21/205 , H01L21/683 , H01L25/00 , H02N13/00 , H01L21/68
CPC classification number: H01L21/67103 , H01L21/6831 , H01L21/6833
Abstract: An electrostatic chuck suitable for use at high temperatures having a replaceable expansion assembly, functioning as an outer tubulation and heat choke, between a chuck body and a heat transfer body. The expansion assembly accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or limits direct heat conduction from the chuck body to the heat transfer body. The ability to operate the chuck at temperatures in excess of 200 DEG C allows it to be used for plasma etching of materials, such as platinum, which require high temperatures to volatilize low volatility etch products as well as routine plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The novel design of the removably attached expansion assembly allows the chuck to be scaled for larger workpieces, to remain serviceable through more heating cycles, and to be economically serviced.
Abstract translation: 一种适于在高温下使用的静电卡盘,其具有用作卡盘体和传热体之间的外管和热阻塞的可替换的膨胀组件。 膨胀组件适应卡盘体和传热体之间的不同的热应力,和/或限制从卡盘体到传热体的直接热传导。 在超过200℃的温度下操作卡盘的能力允许其用于等离子体蚀刻诸如铂的材料,其需要高温挥发低挥发性蚀刻产物以及常规等离子体蚀刻,化学气相沉积, 溅射,离子注入,灰化等。可移除连接的扩展组件的新颖设计允许卡盘被缩放用于较大的工件,以通过更多的加热循环保持可使用并且经济地维护。
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公开(公告)号:JP2001250816A
公开(公告)日:2001-09-14
申请号:JP2000391452
申请日:2000-12-22
Applicant: LAM RES CORP
Inventor: SEXTON GREG , KENNARD MARK ALLEN , SCHOEPP ALAN
IPC: C23C14/50 , C23C16/458 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/683 , H01L21/68
Abstract: PROBLEM TO BE SOLVED: To provide a high-temperature electrostatic chuck. SOLUTION: This electrostatic chuck has an expansion joint between a chuck and a heat transfer body. The expansion joint provides a hermetic seal, absorbs the difference in thermal expansion between the chuck and heat transfer body, and/or controls the quantity of heat conducted from the chuck to the heat transfer body. A plenum provided between surface of the chuck and the surface of the heat transfer body separated from the surface of the chuck is filled with a heat transfer gas which is made to pass through a gas passage, such as the lift pin hole of the chuck for cooling the back face of a substrate supported on the chuck. The heat transfer gas in the plenum conducts heat from the chuck to the heat transfer body. Since this chuck can operate at a temperature of >200 deg.C, the chuck can be used for plasma etching of a noble metal, such as Pt, etc., which is required to be etched at a high temperature for evaporating a low-volatility etched product.
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公开(公告)号:AU2002303965A1
公开(公告)日:2003-03-03
申请号:AU2002303965
申请日:2002-06-05
Applicant: LAM RES CORP
Inventor: SCHOEPP ALAN , SEXTON GREG , KENNARD MARK ALLEN
IPC: H01L21/3065 , H01L21/00 , H01L21/205 , H01L21/683 , H01L25/00 , H02N13/00 , H01L21/68
Abstract: An electrostatic chuck suitable for use at high temperatures having a replaceable expansion assembly, functioning as an outer tubulation and heat choke, between a chuck body and a heat transfer body. The expansion assembly accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or limits direct heat conduction from the chuck body to the heat transfer body. The ability to operate the chuck at temperatures in excess of 200° C. allows it to be used for plasma etching of materials, such as platinum, which require high temperatures to volatilize low volatility etch products as well as routine plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The novel design of the removably attached expansion assembly allows the chuck to be scaled for larger workpieces, to remain serviceable through more heating cycles, and to be economically serviced.
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公开(公告)号:DE60034862T2
公开(公告)日:2008-01-24
申请号:DE60034862
申请日:2000-12-20
Applicant: LAM RES CORP
Inventor: SEXTON GREG , KENNARD MARK ALLEN , SCHOEPP ALAN
IPC: C23C14/50 , H01L21/00 , C23C16/458 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683
Abstract: An electrostatic chuck for use in a plasma chamber where etching or deposition processes are carried out on semiconductor wafers is composed of a chuck body (56) with an electrode (60) to clamp a wafer (30) electrostatically and a heat transfer body (58). A plenum (80) is established between surfaces of the chuck body (56) and the heat transfer body (58). An expansion joint (64) attaches the chuck and heat transfer bodies together and accommodate differential thermal expansion thereof while maintaining a seal during thermal cycles.
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公开(公告)号:AT362650T
公开(公告)日:2007-06-15
申请号:AT00311471
申请日:2000-12-20
Applicant: LAM RES CORP
Inventor: SEXTON GREG , KENNARD MARK ALLEN , SCHOEPP ALAN
IPC: C23C14/50 , H01L21/00 , C23C16/458 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683
Abstract: An electrostatic chuck for use in a plasma chamber where etching or deposition processes are carried out on semiconductor wafers is composed of a chuck body (56) with an electrode (60) to clamp a wafer (30) electrostatically and a heat transfer body (58). A plenum (80) is established between surfaces of the chuck body (56) and the heat transfer body (58). An expansion joint (64) attaches the chuck and heat transfer bodies together and accommodate differential thermal expansion thereof while maintaining a seal during thermal cycles.
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公开(公告)号:AT356431T
公开(公告)日:2007-03-15
申请号:AT02732033
申请日:2002-06-05
Applicant: LAM RES CORP
Inventor: SEXTON GREG , SCHOEPP ALAN , KENNARD MARK ALLEN
IPC: H01L21/3065 , H01L21/00 , H01L21/205 , H01L21/683 , H01L25/00 , H02N13/00 , H01L21/68
Abstract: An electrostatic chuck suitable for use at high temperatures having a replaceable expansion assembly, functioning as an outer tubulation and heat choke, between a chuck body and a heat transfer body. The expansion assembly accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or limits direct heat conduction from the chuck body to the heat transfer body. The ability to operate the chuck at temperatures in excess of 200° C. allows it to be used for plasma etching of materials, such as platinum, which require high temperatures to volatilize low volatility etch products as well as routine plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The novel design of the removably attached expansion assembly allows the chuck to be scaled for larger workpieces, to remain serviceable through more heating cycles, and to be economically serviced.
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公开(公告)号:DE60034862D1
公开(公告)日:2007-06-28
申请号:DE60034862
申请日:2000-12-20
Applicant: LAM RES CORP
Inventor: SEXTON GREG , KENNARD MARK ALLEN , SCHOEPP ALAN
IPC: C23C14/50 , H01L21/00 , C23C16/458 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683
Abstract: An electrostatic chuck for use in a plasma chamber where etching or deposition processes are carried out on semiconductor wafers is composed of a chuck body (56) with an electrode (60) to clamp a wafer (30) electrostatically and a heat transfer body (58). A plenum (80) is established between surfaces of the chuck body (56) and the heat transfer body (58). An expansion joint (64) attaches the chuck and heat transfer bodies together and accommodate differential thermal expansion thereof while maintaining a seal during thermal cycles.
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公开(公告)号:DE60218669D1
公开(公告)日:2007-04-19
申请号:DE60218669
申请日:2002-06-05
Applicant: LAM RES CORP
Inventor: SEXTON GREG , SCHOEPP ALAN , KENNARD MARK ALLEN
IPC: H01L21/3065 , H01L21/68 , H01L21/00 , H01L21/205 , H01L21/683 , H01L25/00 , H02N13/00
Abstract: An electrostatic chuck suitable for use at high temperatures having a replaceable expansion assembly, functioning as an outer tubulation and heat choke, between a chuck body and a heat transfer body. The expansion assembly accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or limits direct heat conduction from the chuck body to the heat transfer body. The ability to operate the chuck at temperatures in excess of 200° C. allows it to be used for plasma etching of materials, such as platinum, which require high temperatures to volatilize low volatility etch products as well as routine plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The novel design of the removably attached expansion assembly allows the chuck to be scaled for larger workpieces, to remain serviceable through more heating cycles, and to be economically serviced.
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