HIGH TEMPERATURE ELECTROSTATIC CHUCK
    1.
    发明申请
    HIGH TEMPERATURE ELECTROSTATIC CHUCK 审中-公开
    高温静电卡盘

    公开(公告)号:WO03003448A2

    公开(公告)日:2003-01-09

    申请号:PCT/US0217663

    申请日:2002-06-05

    CPC classification number: H01L21/67103 H01L21/6831 H01L21/6833

    Abstract: An electrostatic chuck suitable for use at high temperatures having a replaceable expansion assembly, functioning as an outer tubulation and heat choke, between a chuck body and a heat transfer body. The expansion assembly accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or limits direct heat conduction from the chuck body to the heat transfer body. The ability to operate the chuck at temperatures in excess of 200 DEG C allows it to be used for plasma etching of materials, such as platinum, which require high temperatures to volatilize low volatility etch products as well as routine plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The novel design of the removably attached expansion assembly allows the chuck to be scaled for larger workpieces, to remain serviceable through more heating cycles, and to be economically serviced.

    Abstract translation: 一种适于在高温下使用的静电卡盘,其具有用作卡盘体和传热体之间的外管和热阻塞的可替换的膨胀组件。 膨胀组件适应卡盘体和传热体之间的不同的热应力,和/或限制从卡盘体到传热体的直接热传导。 在超过200℃的温度下操作卡盘的能力允许其用于等离子体蚀刻诸如铂的材料,其需要高温挥发低挥发性蚀刻产物以及常规等离子体蚀刻,化学气相沉积, 溅射,离子注入,灰化等。可移除连接的扩展组件的新颖设计允许卡盘被缩放用于较大的工件,以通过更多的加热循环保持可使用并且经济地维护。

    HIGH-TEMPERATURE ELECTROSTATIC CHUCK

    公开(公告)号:JP2001250816A

    公开(公告)日:2001-09-14

    申请号:JP2000391452

    申请日:2000-12-22

    Applicant: LAM RES CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a high-temperature electrostatic chuck. SOLUTION: This electrostatic chuck has an expansion joint between a chuck and a heat transfer body. The expansion joint provides a hermetic seal, absorbs the difference in thermal expansion between the chuck and heat transfer body, and/or controls the quantity of heat conducted from the chuck to the heat transfer body. A plenum provided between surface of the chuck and the surface of the heat transfer body separated from the surface of the chuck is filled with a heat transfer gas which is made to pass through a gas passage, such as the lift pin hole of the chuck for cooling the back face of a substrate supported on the chuck. The heat transfer gas in the plenum conducts heat from the chuck to the heat transfer body. Since this chuck can operate at a temperature of >200 deg.C, the chuck can be used for plasma etching of a noble metal, such as Pt, etc., which is required to be etched at a high temperature for evaporating a low-volatility etched product.

    High temperature electrostatic chuck

    公开(公告)号:AU2002303965A1

    公开(公告)日:2003-03-03

    申请号:AU2002303965

    申请日:2002-06-05

    Applicant: LAM RES CORP

    Abstract: An electrostatic chuck suitable for use at high temperatures having a replaceable expansion assembly, functioning as an outer tubulation and heat choke, between a chuck body and a heat transfer body. The expansion assembly accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or limits direct heat conduction from the chuck body to the heat transfer body. The ability to operate the chuck at temperatures in excess of 200° C. allows it to be used for plasma etching of materials, such as platinum, which require high temperatures to volatilize low volatility etch products as well as routine plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The novel design of the removably attached expansion assembly allows the chuck to be scaled for larger workpieces, to remain serviceable through more heating cycles, and to be economically serviced.

    4.
    发明专利
    未知

    公开(公告)号:DE60034862T2

    公开(公告)日:2008-01-24

    申请号:DE60034862

    申请日:2000-12-20

    Applicant: LAM RES CORP

    Abstract: An electrostatic chuck for use in a plasma chamber where etching or deposition processes are carried out on semiconductor wafers is composed of a chuck body (56) with an electrode (60) to clamp a wafer (30) electrostatically and a heat transfer body (58). A plenum (80) is established between surfaces of the chuck body (56) and the heat transfer body (58). An expansion joint (64) attaches the chuck and heat transfer bodies together and accommodate differential thermal expansion thereof while maintaining a seal during thermal cycles.

    5.
    发明专利
    未知

    公开(公告)号:AT362650T

    公开(公告)日:2007-06-15

    申请号:AT00311471

    申请日:2000-12-20

    Applicant: LAM RES CORP

    Abstract: An electrostatic chuck for use in a plasma chamber where etching or deposition processes are carried out on semiconductor wafers is composed of a chuck body (56) with an electrode (60) to clamp a wafer (30) electrostatically and a heat transfer body (58). A plenum (80) is established between surfaces of the chuck body (56) and the heat transfer body (58). An expansion joint (64) attaches the chuck and heat transfer bodies together and accommodate differential thermal expansion thereof while maintaining a seal during thermal cycles.

    6.
    发明专利
    未知

    公开(公告)号:AT356431T

    公开(公告)日:2007-03-15

    申请号:AT02732033

    申请日:2002-06-05

    Applicant: LAM RES CORP

    Abstract: An electrostatic chuck suitable for use at high temperatures having a replaceable expansion assembly, functioning as an outer tubulation and heat choke, between a chuck body and a heat transfer body. The expansion assembly accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or limits direct heat conduction from the chuck body to the heat transfer body. The ability to operate the chuck at temperatures in excess of 200° C. allows it to be used for plasma etching of materials, such as platinum, which require high temperatures to volatilize low volatility etch products as well as routine plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The novel design of the removably attached expansion assembly allows the chuck to be scaled for larger workpieces, to remain serviceable through more heating cycles, and to be economically serviced.

    7.
    发明专利
    未知

    公开(公告)号:DE60034862D1

    公开(公告)日:2007-06-28

    申请号:DE60034862

    申请日:2000-12-20

    Applicant: LAM RES CORP

    Abstract: An electrostatic chuck for use in a plasma chamber where etching or deposition processes are carried out on semiconductor wafers is composed of a chuck body (56) with an electrode (60) to clamp a wafer (30) electrostatically and a heat transfer body (58). A plenum (80) is established between surfaces of the chuck body (56) and the heat transfer body (58). An expansion joint (64) attaches the chuck and heat transfer bodies together and accommodate differential thermal expansion thereof while maintaining a seal during thermal cycles.

    8.
    发明专利
    未知

    公开(公告)号:DE60218669D1

    公开(公告)日:2007-04-19

    申请号:DE60218669

    申请日:2002-06-05

    Applicant: LAM RES CORP

    Abstract: An electrostatic chuck suitable for use at high temperatures having a replaceable expansion assembly, functioning as an outer tubulation and heat choke, between a chuck body and a heat transfer body. The expansion assembly accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or limits direct heat conduction from the chuck body to the heat transfer body. The ability to operate the chuck at temperatures in excess of 200° C. allows it to be used for plasma etching of materials, such as platinum, which require high temperatures to volatilize low volatility etch products as well as routine plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The novel design of the removably attached expansion assembly allows the chuck to be scaled for larger workpieces, to remain serviceable through more heating cycles, and to be economically serviced.

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