公开(公告)号：WO03003448A2

公开(公告)日：2003-01-09

申请号：PCT/US0217663

申请日：2002-06-05

Applicant: LAM RES CORP ,  SEXTON GREG ,  SCHOEPP ALAN ,  KENNARD MARK ALLEN

Inventor： SEXTON GREG ,  SCHOEPP ALAN ,  KENNARD MARK ALLEN

IPC: H01L21/3065 ,  H01L21/00 ,  H01L21/205 ,  H01L21/683 ,  H01L25/00 ,  H02N13/00 ,  H01L21/68

CPC classification number: H01L21/67103 ,  H01L21/6831 ,  H01L21/6833

Abstract: An electrostatic chuck suitable for use at high temperatures having a replaceable expansion assembly, functioning as an outer tubulation and heat choke, between a chuck body and a heat transfer body. The expansion assembly accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or limits direct heat conduction from the chuck body to the heat transfer body. The ability to operate the chuck at temperatures in excess of 200 DEG C allows it to be used for plasma etching of materials, such as platinum, which require high temperatures to volatilize low volatility etch products as well as routine plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The novel design of the removably attached expansion assembly allows the chuck to be scaled for larger workpieces, to remain serviceable through more heating cycles, and to be economically serviced.

Abstract translation: 一种适于在高温下使用的静电卡盘，其具有用作卡盘体和传热体之间的外管和热阻塞的可替换的膨胀组件。 膨胀组件适应卡盘体和传热体之间的不同的热应力，和/或限制从卡盘体到传热体的直接热传导。 在超过200℃的温度下操作卡盘的能力允许其用于等离子体蚀刻诸如铂的材料，其需要高温挥发低挥发性蚀刻产物以及常规等离子体蚀刻，化学气相沉积， 溅射，离子注入，灰化等。可移除连接的扩展组件的新颖设计允许卡盘被缩放用于较大的工件，以通过更多的加热循环保持可使用并且经济地维护。

公开(公告)号：WO2011028617A3

公开(公告)日：2011-06-09

申请号：PCT/US2010046848

申请日：2010-08-26

Applicant: LAM RES CORP ,  SALDANA MIGUEL A ,  SEXTON GREG

Inventor： SALDANA MIGUEL A ,  SEXTON GREG

IPC: H01L21/3065 ,  H01L21/02

CPC classification number: H01L21/6708 ,  H01L21/67017 ,  Y10T137/0318

Abstract: An apparatus to supply a plurality of process fluids for processing a substrate in a semiconductor processing chamber is disclosed. The apparatus includes a plurality of process fluid supply valves and a fluid supply network that is defined between a crossover valve and a tuning supply valve. The apparatus further includes a tuning fluid supply being connected to the fluid supply network through the tuning supply valve. Further included with the apparatus is a plurality of process fluids that are connected to the fluid supply network through the plurality of process fluid supply valves. A process chamber that has a substrate support is also included in the apparatus. The process chamber further including an edge fluid supply and a center fluid supply, the edge fluid supply connected to the fluid supply network through an edge enable valve and the center supply connected to the fluid supply network through a center enable valve. Wherein the crossover valve, edge enable valve, and center enable valve allow one of tuning fluid or process fluids to flow to one of the edge fluid supply or the center fluid supply.

Abstract translation: 公开了一种在半导体处理室中提供用于处理衬底的多个工艺流体的装置。 该设备包括多个过程流体供应阀和限定在交叉阀和调节供应阀之间的流体供应网络。 该装置还包括通过调节供应阀连接到流体供应网络的调节流体供应。 该设备还包括多个工艺流体，其通过多个工艺流体供应阀连接到流体供应网络。 具有基板支撑件的处理室也包括在该装置中。 所述处理室还包括边缘流体供应源和中心流体供应源，所述边缘流体供应通过边缘使能阀连接到所述流体供应网络，并且所述中心供应通过中心使能阀连接到所述流体供应网络。 其中交叉阀，边缘使能阀和中心使能阀允许调节流体或过程流体中的一个流入边缘流体供应源或中心流体供应源中的一个。

公开(公告)号：JP2001250816A

公开(公告)日：2001-09-14

申请号：JP2000391452

申请日：2000-12-22

Applicant: LAM RES CORP

Inventor： SEXTON GREG ,  KENNARD MARK ALLEN ,  SCHOEPP ALAN

IPC: C23C14/50 ,  C23C16/458 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/68

Abstract: PROBLEM TO BE SOLVED: To provide a high-temperature electrostatic chuck. SOLUTION: This electrostatic chuck has an expansion joint between a chuck and a heat transfer body. The expansion joint provides a hermetic seal, absorbs the difference in thermal expansion between the chuck and heat transfer body, and/or controls the quantity of heat conducted from the chuck to the heat transfer body. A plenum provided between surface of the chuck and the surface of the heat transfer body separated from the surface of the chuck is filled with a heat transfer gas which is made to pass through a gas passage, such as the lift pin hole of the chuck for cooling the back face of a substrate supported on the chuck. The heat transfer gas in the plenum conducts heat from the chuck to the heat transfer body. Since this chuck can operate at a temperature of >200 deg.C, the chuck can be used for plasma etching of a noble metal, such as Pt, etc., which is required to be etched at a high temperature for evaporating a low-volatility etched product.

公开(公告)号：AU2002303965A1

公开(公告)日：2003-03-03

申请号：AU2002303965

申请日：2002-06-05

Applicant: LAM RES CORP

Inventor： SCHOEPP ALAN ,  SEXTON GREG ,  KENNARD MARK ALLEN

IPC: H01L21/3065 ,  H01L21/00 ,  H01L21/205 ,  H01L21/683 ,  H01L25/00 ,  H02N13/00 ,  H01L21/68

Abstract: An electrostatic chuck suitable for use at high temperatures having a replaceable expansion assembly, functioning as an outer tubulation and heat choke, between a chuck body and a heat transfer body. The expansion assembly accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or limits direct heat conduction from the chuck body to the heat transfer body. The ability to operate the chuck at temperatures in excess of 200° C. allows it to be used for plasma etching of materials, such as platinum, which require high temperatures to volatilize low volatility etch products as well as routine plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The novel design of the removably attached expansion assembly allows the chuck to be scaled for larger workpieces, to remain serviceable through more heating cycles, and to be economically serviced.

公开(公告)号：DE60034862T2

公开(公告)日：2008-01-24

申请号：DE60034862

申请日：2000-12-20

Applicant: LAM RES CORP

Inventor： SEXTON GREG ,  KENNARD MARK ALLEN ,  SCHOEPP ALAN

IPC: C23C14/50 ,  H01L21/00 ,  C23C16/458 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/68 ,  H01L21/683

Abstract: An electrostatic chuck for use in a plasma chamber where etching or deposition processes are carried out on semiconductor wafers is composed of a chuck body (56) with an electrode (60) to clamp a wafer (30) electrostatically and a heat transfer body (58). A plenum (80) is established between surfaces of the chuck body (56) and the heat transfer body (58). An expansion joint (64) attaches the chuck and heat transfer bodies together and accommodate differential thermal expansion thereof while maintaining a seal during thermal cycles.

公开(公告)号：AT362650T

公开(公告)日：2007-06-15

申请号：AT00311471

申请日：2000-12-20

Applicant: LAM RES CORP

Inventor： SEXTON GREG ,  KENNARD MARK ALLEN ,  SCHOEPP ALAN

IPC: C23C14/50 ,  H01L21/00 ,  C23C16/458 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/68 ,  H01L21/683

Abstract: An electrostatic chuck for use in a plasma chamber where etching or deposition processes are carried out on semiconductor wafers is composed of a chuck body (56) with an electrode (60) to clamp a wafer (30) electrostatically and a heat transfer body (58). A plenum (80) is established between surfaces of the chuck body (56) and the heat transfer body (58). An expansion joint (64) attaches the chuck and heat transfer bodies together and accommodate differential thermal expansion thereof while maintaining a seal during thermal cycles.

公开(公告)号：AT356431T

公开(公告)日：2007-03-15

申请号：AT02732033

申请日：2002-06-05

Applicant: LAM RES CORP

Inventor： SEXTON GREG ,  SCHOEPP ALAN ,  KENNARD MARK ALLEN

IPC: H01L21/3065 ,  H01L21/00 ,  H01L21/205 ,  H01L21/683 ,  H01L25/00 ,  H02N13/00 ,  H01L21/68

Abstract: An electrostatic chuck suitable for use at high temperatures having a replaceable expansion assembly, functioning as an outer tubulation and heat choke, between a chuck body and a heat transfer body. The expansion assembly accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or limits direct heat conduction from the chuck body to the heat transfer body. The ability to operate the chuck at temperatures in excess of 200° C. allows it to be used for plasma etching of materials, such as platinum, which require high temperatures to volatilize low volatility etch products as well as routine plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The novel design of the removably attached expansion assembly allows the chuck to be scaled for larger workpieces, to remain serviceable through more heating cycles, and to be economically serviced.

公开(公告)号：SG178585A1

公开(公告)日：2012-03-29

申请号：SG2012013629

申请日：2010-08-26

Applicant: LAM RES CORP

Inventor： SALDANA MIGUEL A ,  SEXTON GREG

Abstract: An apparatus to supply a plurality of process fluids for processing a substrate in a semiconductor processing chamber is disclosed. The apparatus includes a plurality of process fluid supply valves and a fluid supply network that is defined between a crossover valve and a tuning supply valve. The apparatus further includes a tuning fluid supply being connected to the fluid supply network through the tuning supply valve. Further included with the apparatus is a plurality of process fluids that are connected to the fluid supply network through the plurality of process fluid supply valves. A process chamber that has a substrate support is also included in the apparatus. The process chamber further including an edge fluid supply and a center fluid supply, the edge fluid supply connected to the fluid supply network through an edge enable valve and the center supply connected to the fluid supply network through a center enable valve. Wherein the crossover valve, edge enable valve, and center enable valve allow one of tuning fluid or process fluids to flow to one of the edge fluid supply or the center fluid supply.

公开(公告)号：DE60034862D1

公开(公告)日：2007-06-28

申请号：DE60034862

申请日：2000-12-20

Applicant: LAM RES CORP

Inventor： SEXTON GREG ,  KENNARD MARK ALLEN ,  SCHOEPP ALAN

IPC: C23C14/50 ,  H01L21/00 ,  C23C16/458 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/68 ,  H01L21/683

Abstract: An electrostatic chuck for use in a plasma chamber where etching or deposition processes are carried out on semiconductor wafers is composed of a chuck body (56) with an electrode (60) to clamp a wafer (30) electrostatically and a heat transfer body (58). A plenum (80) is established between surfaces of the chuck body (56) and the heat transfer body (58). An expansion joint (64) attaches the chuck and heat transfer bodies together and accommodate differential thermal expansion thereof while maintaining a seal during thermal cycles.

公开(公告)号：DE60218669D1

公开(公告)日：2007-04-19

申请号：DE60218669

申请日：2002-06-05

Applicant: LAM RES CORP

Inventor： SEXTON GREG ,  SCHOEPP ALAN ,  KENNARD MARK ALLEN

IPC: H01L21/3065 ,  H01L21/68 ,  H01L21/00 ,  H01L21/205 ,  H01L21/683 ,  H01L25/00 ,  H02N13/00

Abstract: An electrostatic chuck suitable for use at high temperatures having a replaceable expansion assembly, functioning as an outer tubulation and heat choke, between a chuck body and a heat transfer body. The expansion assembly accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or limits direct heat conduction from the chuck body to the heat transfer body. The ability to operate the chuck at temperatures in excess of 200° C. allows it to be used for plasma etching of materials, such as platinum, which require high temperatures to volatilize low volatility etch products as well as routine plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The novel design of the removably attached expansion assembly allows the chuck to be scaled for larger workpieces, to remain serviceable through more heating cycles, and to be economically serviced.