HIGH TEMPERATURE ELECTROSTATIC CHUCK
    1.
    发明申请
    HIGH TEMPERATURE ELECTROSTATIC CHUCK 审中-公开
    高温静电卡盘

    公开(公告)号:WO03003448A2

    公开(公告)日:2003-01-09

    申请号:PCT/US0217663

    申请日:2002-06-05

    CPC classification number: H01L21/67103 H01L21/6831 H01L21/6833

    Abstract: An electrostatic chuck suitable for use at high temperatures having a replaceable expansion assembly, functioning as an outer tubulation and heat choke, between a chuck body and a heat transfer body. The expansion assembly accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or limits direct heat conduction from the chuck body to the heat transfer body. The ability to operate the chuck at temperatures in excess of 200 DEG C allows it to be used for plasma etching of materials, such as platinum, which require high temperatures to volatilize low volatility etch products as well as routine plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The novel design of the removably attached expansion assembly allows the chuck to be scaled for larger workpieces, to remain serviceable through more heating cycles, and to be economically serviced.

    Abstract translation: 一种适于在高温下使用的静电卡盘,其具有用作卡盘体和传热体之间的外管和热阻塞的可替换的膨胀组件。 膨胀组件适应卡盘体和传热体之间的不同的热应力,和/或限制从卡盘体到传热体的直接热传导。 在超过200℃的温度下操作卡盘的能力允许其用于等离子体蚀刻诸如铂的材料,其需要高温挥发低挥发性蚀刻产物以及常规等离子体蚀刻,化学气相沉积, 溅射,离子注入,灰化等。可移除连接的扩展组件的新颖设计允许卡盘被缩放用于较大的工件,以通过更多的加热循环保持可使用并且经济地维护。

    CONTROLLED AMBIENT SYSTEM FOR INTERFACE ENGINEERING
    3.
    发明申请
    CONTROLLED AMBIENT SYSTEM FOR INTERFACE ENGINEERING 审中-公开
    用于界面工程的控制环境系统

    公开(公告)号:WO2008027386A3

    公开(公告)日:2008-08-21

    申请号:PCT/US2007018924

    申请日:2007-08-28

    Abstract: A cluster architecture including a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules The lab-ambient controlled transfer module and the one or more wet substrate processing modules manage a first ambient environment having a vacuum transfer module coupled to the lab-ambient controlled transfer module and one or more plasma processing modules The vacuum transfer module and the one or more plasma processing modules manage a second ambient environment A controlled ambient transfer module coupled to the vacuum transfer module and one or more ambient processing modules manage a third ambient environment The cluster architecture therefore enables controlled processing of the substrate in eith the first, second or third ambient environments, as well as dupng associated transitions The embodiments also provide for efficient methods for filling a trench of a substrate

    Abstract translation: 一种集群架构,包括耦合到一个或多个湿式衬底处理模块的实验室环境受控传输模块。实验室环境受控传输模块和一个或多个湿衬底处理模块管理第一环境环境,其具有耦合到 实验室环境控制转移模块和一个或多个等离子体处理模块真空转移模块和一个或多个等离子体处理模块管理第二周围环境。耦合到真空转移模块的受控环境转移模块和一个或多个环境处理模块管理 第三环境环境因此,集群体系结构能够在第一,第二或第三环境环境中进行衬底的受控处理,以及重复相关的过渡。实施例还提供用于填充衬底的沟槽的有效方法

    HIGH-TEMPERATURE ELECTROSTATIC CHUCK

    公开(公告)号:JP2001250816A

    公开(公告)日:2001-09-14

    申请号:JP2000391452

    申请日:2000-12-22

    Applicant: LAM RES CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a high-temperature electrostatic chuck. SOLUTION: This electrostatic chuck has an expansion joint between a chuck and a heat transfer body. The expansion joint provides a hermetic seal, absorbs the difference in thermal expansion between the chuck and heat transfer body, and/or controls the quantity of heat conducted from the chuck to the heat transfer body. A plenum provided between surface of the chuck and the surface of the heat transfer body separated from the surface of the chuck is filled with a heat transfer gas which is made to pass through a gas passage, such as the lift pin hole of the chuck for cooling the back face of a substrate supported on the chuck. The heat transfer gas in the plenum conducts heat from the chuck to the heat transfer body. Since this chuck can operate at a temperature of >200 deg.C, the chuck can be used for plasma etching of a noble metal, such as Pt, etc., which is required to be etched at a high temperature for evaporating a low-volatility etched product.

    6.
    发明专利
    未知

    公开(公告)号:DE60034862T2

    公开(公告)日:2008-01-24

    申请号:DE60034862

    申请日:2000-12-20

    Applicant: LAM RES CORP

    Abstract: An electrostatic chuck for use in a plasma chamber where etching or deposition processes are carried out on semiconductor wafers is composed of a chuck body (56) with an electrode (60) to clamp a wafer (30) electrostatically and a heat transfer body (58). A plenum (80) is established between surfaces of the chuck body (56) and the heat transfer body (58). An expansion joint (64) attaches the chuck and heat transfer bodies together and accommodate differential thermal expansion thereof while maintaining a seal during thermal cycles.

    7.
    发明专利
    未知

    公开(公告)号:AT420455T

    公开(公告)日:2009-01-15

    申请号:AT00991021

    申请日:2000-11-14

    Applicant: LAM RES CORP

    Abstract: A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber using a plasma enhanced process is disclosed. The arrangement includes a first magnetic bucket having a plurality of first magnetic elements. The first magnetic elements being configured for producing a first magnetic field inside the process chamber. The arrangement further includes a second magnetic bucket having a plurality of second magnetic elements. The second magnetic elements being configured for producing a second magnetic field inside the process chamber. The second magnetic field being configured to combine with the first magnetic field to produce a resultant magnetic field between the first magnetic bucket and the second magnetic bucket. The resultant magnetic field being configured to permit by-product gas from the processing to pass through while substantially confining the plasma within a volume defined at least by the process chamber and the resultant magnetic field.

    8.
    发明专利
    未知

    公开(公告)号:AT362650T

    公开(公告)日:2007-06-15

    申请号:AT00311471

    申请日:2000-12-20

    Applicant: LAM RES CORP

    Abstract: An electrostatic chuck for use in a plasma chamber where etching or deposition processes are carried out on semiconductor wafers is composed of a chuck body (56) with an electrode (60) to clamp a wafer (30) electrostatically and a heat transfer body (58). A plenum (80) is established between surfaces of the chuck body (56) and the heat transfer body (58). An expansion joint (64) attaches the chuck and heat transfer bodies together and accommodate differential thermal expansion thereof while maintaining a seal during thermal cycles.

    APPARATUSES AND METHODS FOR CLEANING A SUBSTRATE

    公开(公告)号:MY144394A

    公开(公告)日:2011-09-15

    申请号:MYPI20045300

    申请日:2004-12-22

    Applicant: LAM RES CORP

    Abstract: AN APPARATUS FOR USE IN PROCESSING A SUBSTRATE (216) INCLUDES A BRUSH ENCLOSURE (212) EXTENDING OVER A LENGTH (218). THE BRUSH ENCLOSURE (212) IS CONFIGURED TO BE DISPOSED OVER A SURFACE OF THE SUBSTRATE AND HAS AN OPEN REGION (222) THAT IS CONFIGURED TO BE DISPOSED IN PROXIMITY TO THE SUBSTRATE. THE OPEN REGION EXTENDS OVER THE LENGTH OF THE BRUSH ENCLOSURE AND ENABLES FOAM (410) FROM WITHIN THE BRUSH ENCLOSURE TO CONTACT THE SURFACE OF THE SUBSTRATE. A SUBSTRATE CLEANING SYSTEM AND METHOD FOR CLEANING A SUBSTRATE ARE ALSO DESCRIBED.

    High temperature electrostatic chuck

    公开(公告)号:AU2002303965A1

    公开(公告)日:2003-03-03

    申请号:AU2002303965

    申请日:2002-06-05

    Applicant: LAM RES CORP

    Abstract: An electrostatic chuck suitable for use at high temperatures having a replaceable expansion assembly, functioning as an outer tubulation and heat choke, between a chuck body and a heat transfer body. The expansion assembly accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or limits direct heat conduction from the chuck body to the heat transfer body. The ability to operate the chuck at temperatures in excess of 200° C. allows it to be used for plasma etching of materials, such as platinum, which require high temperatures to volatilize low volatility etch products as well as routine plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The novel design of the removably attached expansion assembly allows the chuck to be scaled for larger workpieces, to remain serviceable through more heating cycles, and to be economically serviced.

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