APPARATUS FOR MEASURING A SET OF ELECTRICAL CHARACTERISTICS IN A PLASMA
    1.
    发明申请
    APPARATUS FOR MEASURING A SET OF ELECTRICAL CHARACTERISTICS IN A PLASMA 审中-公开
    用于测量等离子体中一组电特性的装置

    公开(公告)号:WO2007005210A2

    公开(公告)日:2007-01-11

    申请号:PCT/US2006023027

    申请日:2006-06-13

    CPC classification number: H01J37/32431 H01J37/32935 H05H1/0081 Y10T29/49002

    Abstract: A probe apparatus configured to measure a set of electrical characteristics in a plasma processing chamber, the plasma processing chamber including a set of plasma chamber surfaces configured to be exposed to a plasma is disclosed.The probe apparatus includes a collection disk structure configured to be exposed to the plasma, whereby the collection disk structure is coplanar with at least one of the set of plasma chamber surfaces. The probe apparatus also includes a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers, wherein the set of electrical characteristics is generated by an ion flux of the plasma. The probe apparatus further includes an insulation barrier configured to substantially electrically separate the collection disk and the conductive path from the set of plasma chamber surfaces.

    Abstract translation: 探针装置被配置为测量等离子体处理室中的一组电特性,所述等离子体处理室包括一组等离子体室表面,所述一组等离子体室表面被配置为暴露于等离子体。探针装置包括收集盘结构, 由此收集盘结构与该组等离子体室表面中的至少一个共面。 所述探针装置还包括导电路径,所述导电路径被配置为将所述一组电特性从所述收集盘结构传送到一组换能器,其中所述一组电特性由所述等离子体的离子通量产生。 探针装置还包括绝缘屏障,该绝缘屏障被配置为将收集盘和导电路径基本上与等离子体室表面集合电分离。

    Adjustable height pif probe
    3.
    发明专利
    Adjustable height pif probe 有权
    可调高度PIF探头

    公开(公告)号:JP2007294419A

    公开(公告)日:2007-11-08

    申请号:JP2007064587

    申请日:2007-03-14

    CPC classification number: H01J37/32935

    Abstract: PROBLEM TO BE SOLVED: To provide an adjustable height PIF (plasma ion flux) probe for measuring a set of electric characteristics in plasma.
    SOLUTION: A plasma probe assembly 140 for use in a plasma processing chamber is provided. A semiconductor probe element 304 with a probe surface 308 at a first end of the semiconductor probe element is provided. An electrical connector 312 is electrically connected to the semiconductor probe element 304. An electrically insulating sleeve 316 surrounds at least part of the probe element 304. An adjustment device is connected to a semiconductor probe shaft 352 so that the probe surface 308 is coplanar with an interior chamber surface of the plasma processing chamber.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题:提供用于测量等离子体中的一组电特性的可调高度PIF(等离子体离子通量)探针。 解决方案:提供一种用于等离子体处理室的等离子体探针组件140。 提供了在半导体探针元件的第一端具有探针表面308的半导体探针元件304。 电连接器312电连接到半导体探针元件304.电绝缘套管316围绕探针元件304的至少一部分。调节装置连接到半导体探针轴352,使得探针表面308与 等离子体处理室的内室表面。 版权所有(C)2008,JPO&INPIT

    APPARATUS FOR MEASURING A SET OF ELECTRICAL CHARACTERISTICS IN A PLASMA

    公开(公告)号:IL188279A

    公开(公告)日:2012-12-31

    申请号:IL18827907

    申请日:2007-12-19

    Abstract: Methods using a probe apparatus configured to measure a set of electrical characteristics in a plasma include providing a chamber wall including at least a set of plasma chamber surfaces configured to be exposed to a plasma, the plasma having a set of electrical characteristics. The method includes installing a collection disk structure configured to be exposed to the plasma, wherein the collection disk structure having at least a body disposed within the chamber wall and a collection disk structure surface that is either coplanar or recessed with at least one of the set of plasma chamber surfaces and providing a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers. The method may include coupling a thermal grounding element with the conductive path for providing thermal grounding to at least the conductive path and may alternatively or additionally include disposing an insulation barrier configured to substantially electrically separate at least one of the collection disk and the conductive path.

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