公开(公告)号：WO2009158556A3

公开(公告)日：2010-04-01

申请号：PCT/US2009048747

申请日：2009-06-26

Applicant: LAM RES CORP ,  KEIL DOUGLAS ,  BOOTH JEAN-PAUL ,  THORGRIMSSON CHRISTOPHER

Inventor： KEIL DOUGLAS ,  BOOTH JEAN-PAUL ,  THORGRIMSSON CHRISTOPHER

IPC: H05H1/36 ,  H05H1/24

CPC classification number: H01J37/32935 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32926 ,  H01J37/32954 ,  H01J2237/244 ,  H01J2237/24564 ,  H01J2237/327 ,  H01L21/263

Abstract: A method for automatically characterizing plasma during substrate processing is provided. The method includes collecting a set of process data, which includes at least data about current and voltage. The method also includes identifying a relevancy range for the set of process data, wherein the relevancy range includes a subset of the set of process data. The method further includes determining a set of seed values. The method yet also includes employing the relevancy range and the set of seed values to perform curve-fitting, wherein the curve-fitting enables the plasma to be automatically characterized.

Abstract translation: 提供了一种用于在衬底处理期间自动表征等离子体的方法。 该方法包括收集一组过程数据，其至少包括关于电流和电压的数据。 所述方法还包括识别所述一组过程数据的相关范围，其中所述相关范围包括所述一组过程数据的子集。 该方法还包括确定一组种子值。 该方法还包括采用相关范围和种子值集合进行曲线拟合，其中曲线拟合使等离子体能够被自动表征。

公开(公告)号：EP2016204A4

公开(公告)日：2014-04-09

申请号：EP07781269

申请日：2007-04-03

Applicant: LAM RES CORP

Inventor： KEIL DOUGLAS

IPC: C23C16/00 ,  G01R19/00 ,  H01J37/32 ,  H01L21/66 ,  H05H1/00

CPC classification number: H01J37/32935 ,  G01R19/0061 ,  H01J37/32954 ,  H01J37/3299

公开(公告)号：EP1896367A4

公开(公告)日：2011-12-14

申请号：EP06784838

申请日：2006-06-13

Applicant: LAM RES CORP

Inventor： KIMBALL CHRISTOPHER ,  HUDSON ERIC ,  KEIL DOUGLAS ,  MARAKHTANOV ALEXEI

IPC: C02F1/00 ,  H01J37/32 ,  H05H1/00

CPC classification number: H01J37/32431 ,  H01J37/32935 ,  H05H1/0081 ,  Y10T29/49002

公开(公告)号：WO2007121087B1

公开(公告)日：2008-10-02

申请号：PCT/US2007065890

申请日：2007-04-03

Applicant: LAM RES CORP ,  KEIL DOUGLAS

Inventor： KEIL DOUGLAS

IPC: C23C16/00

CPC classification number: H01J37/32935 ,  G01R19/0061 ,  H01J37/32954 ,  H01J37/3299

Abstract: Methods and apparatus for detecting and/or deriving the absolute values of and/or the relative changes in parameters such as the plasma potential and the ion flux using a Planar Ion Flux (PIF) probing arrangement are disclosed. The detected and/or derived values are then employed to control plasma processing processes.

Abstract translation: 公开了使用平面离子通量（PIF）探测装置来检测和/或导出诸如等离子体电位和离子通量的参数的绝对值和/或相对变化的方法和装置。 然后使用检测到的和/或导出的值来控制等离子体处理过程。

公开(公告)号：WO2006104841B1

公开(公告)日：2008-02-21

申请号：PCT/US2006010576

申请日：2006-03-24

Applicant: LAM RES CORP ,  HUDSON ERIC ,  KEIL DOUGLAS ,  MARAKHTANOV ALEXEI

Inventor： HUDSON ERIC ,  KEIL DOUGLAS ,  MARAKHTANOV ALEXEI

IPC: B05C11/00 ,  B05C13/00 ,  C23C16/00

CPC classification number: H01J37/32963 ,  H01J37/32935

Abstract: A method of determining an endpoint of a process by measuring a thickness of a layer, the layer being deposited on the surface by a prior process is disclosed. The method includes providing a sensor that is coplanar with the surface, wherein the sensor is configured to measure the thickness. The method also includes exposing the plasma chamber to a plasma, wherein the thickness is changed by the exposing, and determining the thickness as a function of time. The method further includes ascertaining a steady state condition in the thickness, the steady state condition being characterized by a substantially stable measurement of the thickness, a start of the steady state condition representing the endpoint.

Abstract translation: 公开了一种通过测量层的厚度来确定工艺的端点的方法，该层通过先前的工艺沉积在表面上。 该方法包括提供与表面共面的传感器，其中传感器被配置成测量厚度。 该方法还包括将等离子体室暴露于等离子体，其中通过曝光来改变厚度，并且确定作为时间的函数的厚度。 该方法还包括确定厚度中的稳定状态条件，稳态条件的特征在于厚度的基本上稳定的测量，表示端点的稳态条件的开始。

公开(公告)号：WO2007121087A2

公开(公告)日：2007-10-25

申请号：PCT/US2007065890

申请日：2007-04-03

Applicant: LAM RES CORP ,  KEIL DOUGLAS

Inventor： KEIL DOUGLAS

IPC: B24B31/00

CPC classification number: H01J37/32935 ,  G01R19/0061 ,  H01J37/32954 ,  H01J37/3299

Abstract: Methods and apparatus for detecting and/or deriving the absolute values of and/or the relative changes in parameters such as the plasma potential and the ion flux using a Planar Ion Flux (PIF) probing arrangement are disclosed. The detected and/or derived values are then employed to control plasma processing processes.

Abstract translation: 公开了使用平面离子通量（PIF）探测装置来检测和/或导出诸如等离子体电位和离子通量的参数的绝对值和/或相对变化的方法和装置。 然后使用检测到的和/或导出的值来控制等离子体处理过程。

公开(公告)号：WO2006104841A2

公开(公告)日：2006-10-05

申请号：PCT/US2006010576

申请日：2006-03-24

Applicant: LAM RES CORP ,  HUDSON ERIC ,  KEIL DOUGLAS ,  MARAKHTANOV ALEXEI

Inventor： HUDSON ERIC ,  KEIL DOUGLAS ,  MARAKHTANOV ALEXEI

IPC: C23C16/52 ,  B05C11/00 ,  C23C16/00

CPC classification number: H01J37/32963 ,  H01J37/32935

Abstract: A method of determining an endpoint of a process by measuring a thickness of a layer, the layer being deposited on the surface by a prior process is disclosed. The method includes providing a sensor that is coplanar with the surface, wherein the sensor is configured to measure the thickness. The method also includes exposing the plasma chamber to a plasma, wherein the thickness is changed by the exposing, and determining the thickness as a function of time. The method further includes ascertaining a steady state condition in the thickness, the steady state condition being characterized by a substantially stable measurement of the thickness, a start of the steady state condition representing the endpoint.

Abstract translation: 公开了一种通过测量层的厚度来确定工艺的端点的方法，该层通过先前的工艺沉积在表面上。 该方法包括提供与表面共面的传感器，其中传感器被配置成测量厚度。 该方法还包括将等离子体室暴露于等离子体，其中通过曝光来改变厚度，并且确定作为时间的函数的厚度。 该方法还包括确定厚度中的稳定状态条件，稳态条件的特征在于厚度的基本上稳定的测量，表示端点的稳态条件的开始。

公开(公告)号：WO2007145801A2

公开(公告)日：2007-12-21

申请号：PCT/US2007012581

申请日：2007-05-25

Applicant: LAM RES CORP ,  KEIL DOUGLAS ,  HUDSON ERIC ,  KIMBALL CHRIS ,  FISCHER ANDREAS

Inventor： KEIL DOUGLAS ,  HUDSON ERIC ,  KIMBALL CHRIS ,  FISCHER ANDREAS

IPC: C23C14/00

CPC classification number: C23C16/52 ,  C23C16/509 ,  H01J37/32935 ,  H01J37/3299

Abstract: A method of fault detection for use in a plasma processing chamber is provided. The method comprises monitoring plasma parameters within a plasma chamber and analyzing the resulting information. Such analysis enables detection of failures and the diagnosis of failure modes in a plasma processing reactor during the course of wafer processing. The method comprises measuring the plasma parameters as a function of time and analyzing the resulting data. The data can be observed, characterized, compared with reference data, digitized, processed, or analyzed in any way to reveal a specific fault. Monitoring can be done with a detector such as a probe, which is preferably maintained within the plasma chamber substantively coplanar with a surface within the chamber, and directly measures net ion flux and other plasma parameters. The detector is preferably positioned at a grounded surface within the reactor such as a grounded showerhead electrode, and can be of a planar ion flux probe (PIF) type or a non-capacitive type. Chamber faults that can be detected include a build-up of process by-products in the process chamber, a helium leak, a match re-tuning event, a poor stabilization rate, and a loss of plasma confinement. If the detector is a probe, the probe can be embedded in a part of a plasma processing chamber and can comprises one or more gas feed-through holes.

Abstract translation: 提供了一种用于等离子体处理室的故障检测方法。 该方法包括监测等离子体室内的等离子体参数并分析所得到的信息。 这样的分析使得能够在晶片处理过程中检测等离子体处理反应器中的故障和故障模式的诊断。 该方法包括测量作为时间的函数的等离子体参数并分析所得到的数据。 数据可以观察，表征，与参考数据进行比较，数字化，处理或分析，以显示特定故障。 可以用诸如探针的检测器进行监测，该探针优选地保持在与腔室内的表面基本上共面的等离子体室内，并且直接测量净离子通量和其它等离子体参数。 检测器优选地位于反应器内的接地表面，例如接地喷头电极，并且可以是平面离子通量探针（PIF）型或非电容型。 可以检测到的室内故障包括处理室中的过程副产物的积聚，氦泄漏，匹配重新调谐事件，差的稳定化速率和等离子体约束的损失。 如果检测器是探针，则探针可以嵌入在等离子体处理室的一部分中，并且可以包括一个或多个气体馈通孔。

公开(公告)号：WO2007005210A2

公开(公告)日：2007-01-11

申请号：PCT/US2006023027

申请日：2006-06-13

Applicant: LAM RES CORP ,  KIMBALL CHRISTOPHER ,  HUDSON ERIC ,  KEIL DOUGLAS ,  MARAKHTANOV ALEXEI

Inventor： KIMBALL CHRISTOPHER ,  HUDSON ERIC ,  KEIL DOUGLAS ,  MARAKHTANOV ALEXEI

IPC: C02F1/00

CPC classification number: H01J37/32431 ,  H01J37/32935 ,  H05H1/0081 ,  Y10T29/49002

Abstract: A probe apparatus configured to measure a set of electrical characteristics in a plasma processing chamber, the plasma processing chamber including a set of plasma chamber surfaces configured to be exposed to a plasma is disclosed.The probe apparatus includes a collection disk structure configured to be exposed to the plasma, whereby the collection disk structure is coplanar with at least one of the set of plasma chamber surfaces. The probe apparatus also includes a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers, wherein the set of electrical characteristics is generated by an ion flux of the plasma. The probe apparatus further includes an insulation barrier configured to substantially electrically separate the collection disk and the conductive path from the set of plasma chamber surfaces.

Abstract translation: 探针装置被配置为测量等离子体处理室中的一组电特性，所述等离子体处理室包括一组等离子体室表面，所述一组等离子体室表面被配置为暴露于等离子体。探针装置包括收集盘结构， 由此收集盘结构与该组等离子体室表面中的至少一个共面。 所述探针装置还包括导电路径，所述导电路径被配置为将所述一组电特性从所述收集盘结构传送到一组换能器，其中所述一组电特性由所述等离子体的离子通量产生。 探针装置还包括绝缘屏障，该绝缘屏障被配置为将收集盘和导电路径基本上与等离子体室表面集合电分离。

公开(公告)号：JP2007294419A

公开(公告)日：2007-11-08

申请号：JP2007064587

申请日：2007-03-14

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： KIMBALL CHRISTOPHER ,  HUDSON ERIC ,  KEIL DOUGLAS ,  MARAKHTANOV ALEXEI

IPC: H05H1/00 ,  C23C16/50 ,  H01L21/3065

CPC classification number: H01J37/32935

Abstract: PROBLEM TO BE SOLVED: To provide an adjustable height PIF (plasma ion flux) probe for measuring a set of electric characteristics in plasma.
SOLUTION: A plasma probe assembly 140 for use in a plasma processing chamber is provided. A semiconductor probe element 304 with a probe surface 308 at a first end of the semiconductor probe element is provided. An electrical connector 312 is electrically connected to the semiconductor probe element 304. An electrically insulating sleeve 316 surrounds at least part of the probe element 304. An adjustment device is connected to a semiconductor probe shaft 352 so that the probe surface 308 is coplanar with an interior chamber surface of the plasma processing chamber.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供用于测量等离子体中的一组电特性的可调高度PIF（等离子体离子通量）探针。 解决方案：提供一种用于等离子体处理室的等离子体探针组件140。 提供了在半导体探针元件的第一端具有探针表面308的半导体探针元件304。 电连接器312电连接到半导体探针元件304.电绝缘套管316围绕探针元件304的至少一部分。调节装置连接到半导体探针轴352，使得探针表面308与 等离子体处理室的内室表面。 版权所有（C）2008，JPO＆INPIT