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公开(公告)号：KR20200126011A
公开(公告)日：2020-11-05
申请号：KR20207030669
申请日：2019-03-18
Applicant: LAM RES CORP
Inventor： YU JENGYI , TAN SAMANTHA SIAMHWA , VOLOSSKIY BORIS , KOLICS ARTUR , PAN YANG
IPC: H01L21/285 , C23C16/44 , H01L21/02 , H01L21/324 , H01L21/67
Abstract: 기판상에금속상호접속층을증착하는방법은프로세싱챔버의기판지지부상에기판을배치하는단계및 접착층, 확산배리어, 및시드층 중적어도하나로서기능하도록구성된중간층을기판상에증착하는단계를포함한다. 중간층을증착하는단계는금속-실리사이드 (M-Si) 결합을갖는제 1 재료를포함하는금속-유기전구체를공급하는것을포함한다. 방법은중간층 상에금속상호접속층을증착하는단계를더 포함한다.
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公开(公告)号：EP2240626A4
公开(公告)日：2014-04-16
申请号：EP08859699
申请日：2008-12-12
Applicant: LAM RES CORP
Inventor： LI NANHAI , KOLICS ARTUR , JAIN AMAN , RULKENS RON , BIRTWHISTLE DARIN , CHAN CHEE
CPC classification number: G05D11/138 , C25D21/12 , C25D21/14 , G01N21/31 , G01N21/65 , G01N21/85 , G01N2021/8416
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公开(公告)号：WO2012056390A3
公开(公告)日：2012-07-26
申请号：PCT/IB2011054740
申请日：2011-10-24
Applicant: LAM RES CORP , LAM RES AG , KOLICS ARTUR
Inventor： KOLICS ARTUR
IPC: C23C18/16
Abstract: One aspect of the present invention is a deposition solution to deposit metals and metal alloys such as for fabrication of electronic devices. According to one embodiment, the deposition solution comprises metal ions and a pH adjustor. The pH adjustor comprises a functional group having a general formula (R1R2N)(R3R4N)C=N- R5 where: N is nitrogen; C is carbon; and R-1, R2, R3, R4, and R5 are the same or different and represent hydrogen, alkyl group, aryl group, or alkylaryl group. Another aspect of the presented invention is a method of preparing deposition solutions. Still another aspect of the present invention is a method of fabricating electronic devices.
Abstract translation: 本发明的一个方面是沉积诸如用于制造电子器件的金属和金属合金的沉积溶液。 根据一个实施方案，沉积溶液包含金属离子和pH调节剂。 pH调节剂包括具有通式（R 1 R 2 N）（R 3 R 4 N）C = N-R 5的官能团，其中：N是氮; C是碳; 并且R 1，R 2，R 3，R 4和R 5相同或不同，表示氢，烷基，芳基或烷基芳基。 本发明的另一方面是制备沉积溶液的方法。 本发明的另一方面是制造电子器件的方法。
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公开(公告)号：WO2012004710A3
公开(公告)日：2012-05-18
申请号：PCT/IB2011052895
申请日：2011-06-30
Applicant: LAM RES CORP , LAM RES AG , KOLICS ARTUR , LEE WILLLIAM T , REDEKER FRITZ
Inventor： KOLICS ARTUR , LEE WILLLIAM T , REDEKER FRITZ
IPC: H01L21/60
CPC classification number: H01L24/04 , H01L21/76849 , H01L23/481 , H01L24/03 , H01L24/05 , H01L2224/03464 , H01L2224/0401 , H01L2224/05026 , H01L2224/05099 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05571 , H01L2224/05573 , H01L2224/05599 , H01L2224/05611 , H01L2224/05639 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/05666 , H01L2224/13 , H01L2224/13023 , H01L2224/13025 , H01L2224/13099 , H01L2224/131 , H01L2224/13599 , H01L2224/29099 , H01L2224/29599 , H01L2924/00012 , H01L2924/00013 , H01L2924/00014 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/014 , H01L2924/14 , H01L2224/05552 , H01L2924/00
Abstract: A method of making an electronic device which in one embodiment comprises providing a substrate, electrolessly depositing a barrier metal at least on portions of the substrate, and using wet chemistry such as electroless deposition to deposit a substantially gold-free wetting layer having solder wettability onto the barrier metal. An electronic device which in one embodiment comprises a metallization stack. The metallization stack comprises a barrier metal deposited electrolessly and a substantially gold-free wetting layer deposited on the barrier metal, and the wetting layer is wettable by solder.
Abstract translation: 一种制造电子器件的方法，在一个实施例中，该方法包括提供衬底，在衬底的至少一部分上无电沉积阻挡金属，并且使用湿化学如无电沉积将基本不含金的浸润层浸润到 屏障金属。 在一个实施例中包括金属化叠层的电子器件。 金属化叠层包括无电沉积的阻挡金属和沉积在阻挡金属上的基本上无金的润湿层，并且润湿层可通过焊料润湿。
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Patent Agency Ranking6.发明申请SURFACE MODIFICATION OF INTERLAYER DIELECTRIC FOR MINIMIZING CONTAMINATION AND SURFACE DEGRADATION 审中-公开用于最小化污染和表面降解的中间层电介质的表面改性
公开(公告)号：WO2007146848A3
公开(公告)日：2008-03-06
申请号：PCT/US2007070820
申请日：2007-06-09
Applicant: LAM RES CORP , KOLICS ARTUR , LI NANHAI , POLYANSKAYA MARINA , WEISE MARK , CORNEILLE JASON
Inventor： KOLICS ARTUR , LI NANHAI , POLYANSKAYA MARINA , WEISE MARK , CORNEILLE JASON
IPC: H01L21/02
CPC classification number: H01L21/76861 , B08B3/04 , C11D7/08 , C11D7/22 , C11D7/32 , H01L21/31053 , H01L21/76829 , H01L21/76838 , H01L21/76849 , H01L21/76862 , H01L21/76864
Abstract: A semiconductor system includes: providing a dielectric layer (104); providing a conductor (108) in the dielectric layer (104), the conductor (108) exposed at the top of the dielectric layer (104); capping the exposed conductor (108); and modifying the surface of the dielectric layer (104); modifying the surface of the dielectric layer (104); wherein modifying the surface includes cleaning conductor (108) ions from the dielectric layer (104) by dissolving the conductor (108) in a low pH solution, dissolving the dielectric layer (104) under the conductor (108) ions, mechanically enhanced cleaning, or chemisorbing a hydrophobic layer (800) on the dielectric layer (104).
Abstract translation: 半导体系统包括：提供介电层（104）; 在所述电介质层（104）中提供导体（108），所述导体（108）暴露在所述电介质层（104）的顶部; 盖住暴露的导体（108）; 和改变介电层（104）的表面; 改变介电层（104）的表面; 其中通过将导体（108）溶解在低pH溶液中，将介电层（104）溶解在导体（108）下方的离子，机械增强清洁，改性表面包括清洁导体（108）离子从电介质层（104） 或化学吸附介电层（104）上的疏水层（800）。
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公开(公告)号：WO2012007865A3
公开(公告)日：2012-05-18
申请号：PCT/IB2011052907
申请日：2011-07-01
Applicant: LAM RES CORP , LAM RES AG , KOLICS ARTUR , REDEKER FRITZ
Inventor： KOLICS ARTUR , REDEKER FRITZ
IPC: H01L21/288
CPC classification number: H05K1/09 , C23C18/1607 , C23C18/1662 , C23C18/1834 , C23C18/1844 , C23C18/31 , C23C18/40 , C23C18/50 , C23C18/52 , C25D3/12 , C25D3/20 , C25D3/22 , C25D3/30 , C25D3/38 , C25D3/46 , C25D3/48 , C25D3/50 , C25D3/54 , C25D3/562 , C25D5/02 , C25D7/123 , C25D15/00 , H01L21/288 , H01L21/2885 , H01L21/76877 , H01L21/76898 , H01L23/53209 , H01L23/53238 , H01L23/53252 , H01L23/53266 , H01L2924/0002 , H01L2924/00
Abstract: One aspect of the present invention is a method of processing a substrate. In one embodiment, the method comprises forming an electrical conductor on or in the substrate by providing a mixture comprising metal particles and an electroless deposition solution and electrolessly depositing a metal matrix and co-depositing the metal particles. In another embodiment, the method comprises forming an electrical conductor on or in the substrate by providing a mixture comprising metal particles and an electrochemical plating solution and electrochemically plating a metal matrix and co-depositing the metal particles. Another aspect of the present invention is a mixture for the formation of an electrical conductor on or in a substrate. Another aspect of the present invention is an electronic device.
Abstract translation: 本发明的一个方面是一种处理衬底的方法。 在一个实施方案中，该方法包括通过提供包含金属颗粒和无电镀沉积溶液的混合物和无电沉积金属基质并共沉积金属颗粒在基底上或基底上形成电导体。 在另一个实施方案中，该方法包括通过提供包含金属颗粒和电化学电镀溶液的混合物以及电化学镀金属基质并共沉积金属颗粒在基底上或基底上形成电导体。 本发明的另一方面是用于在基底上或基底中形成电导体的混合物。 本发明的另一方面是电子设备。
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8.发明申请
公开(公告)号：WO2009120727A3
公开(公告)日：2009-11-19
申请号：PCT/US2009038149
申请日：2009-03-24
Applicant: LAM RES CORP , KOLICS ARTUR , LI NANHAI
Inventor： KOLICS ARTUR , LI NANHAI
IPC: H01L21/306
CPC classification number: C11D11/0047 , C11D3/0073 , C11D3/04 , C11D3/042 , C11D3/2086 , C23C16/0227 , H01L21/02041 , H01L21/02074 , H01L21/7684 , H01L21/76883
Abstract: This invention pertains to fabrication of devices. One embodiment is a method of substrate cleaning and electroless deposition of a cap layer for an integrated circuit. The method is performed on a substrate having a surface comprising a metal and dielectric damascene metallization layer. The method comprises exposing the surface of the substrate to a cleaning solution sufficient to clean the surface of the substrate and exposing the surface of the substrate to an electroless deposition solution sufficient to deposit the cap layer. Other embodiments of the present invention include solutions to clean the substrate and solutions to accomplish electroless deposition.
Abstract translation: 本发明涉及器件的制造。 一个实施例是用于集成电路的基底清洁和化学沉积盖层的方法。 该方法在具有包括金属和电介质镶嵌金属化层的表面的衬底上执行。 该方法包括将衬底表面暴露于足以清洁衬底表面并将衬底表面暴露于足以沉积帽层的无电沉积溶液的清洁溶液。 本发明的其他实施例包括清洁基板和溶液以实现无电沉积的解决方案。
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9.发明申请POST-DEPOSITION CLEANING METHODS AND FORMULATIONS FOR SUBSTRATES WITH CAP LAYERS 审中-公开沉积后清洁方法和具有覆盖层的基材的配方
公开(公告)号：WO2009086231A3
公开(公告)日：2009-08-27
申请号：PCT/US2008087878
申请日：2008-12-20
Applicant: LAM RES CORP , KOLICS ARTUR , LI SHIJIAN , ARUNAGIRI TIRUCHIRAPALLI , THIE WILLIAM
Inventor： KOLICS ARTUR , LI SHIJIAN , ARUNAGIRI TIRUCHIRAPALLI , THIE WILLIAM
IPC: H01L21/302 , H01L21/306
CPC classification number: H05K3/0085 , C11D7/3209 , C11D11/0047 , H01L21/02068 , H01L21/76849 , H01L21/76861
Abstract: One embodiment of the present invention is a method of fabricating an integrated circuit. The method includes providing a substrate having a metal and dielectric damascene metallization layer and depositing substantially on the metal a cap. After deposition of the cap, the substrate is cleaned with a solution comprising an amine to provide a pH for the cleaning solution of 7 to about 13. Another embodiment of the presented invention is a method of cleaning substrates. Still another embodiment of the present invention is a formulation for a cleaning solution.
Abstract translation: 本发明的一个实施例是一种制造集成电路的方法。 该方法包括提供具有金属和电介质镶嵌金属化层的衬底并且基本上在金属上沉积帽。 在盖子沉积之后，用包含胺的溶液清洁衬底以提供7至约13的清洁溶液的pH。本发明的另一个实施例是清洁衬底的方法。 本发明的又一个实施方案是用于清洁溶液的配制剂。
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公开(公告)号：WO2009086230A3
公开(公告)日：2009-09-17
申请号：PCT/US2008087877
申请日：2008-12-20
Applicant: LAM RES CORP , KOLICS ARTUR
Inventor： KOLICS ARTUR
IPC: C01B33/113 , B01J23/44 , C23C18/30
CPC classification number: B01J31/1633 , B01J31/1805 , B01J2231/60 , B01J2231/62 , B01J2531/824 , C23C18/1879 , C23C18/1882 , C23C18/31 , H01L21/288 , H01L21/76874
Abstract: Presented is a solution to activate an oxide surface for electroless deposition of a metal. The solution comprises a binding agent having at least one functional group capable of forming a chemical bond with the oxide surface and at least one functional group capable of forming a chemical bond with a catalyst. Also present are methods of fabricating electronic devices and electronic devices fabricated using the method.
Abstract translation: 提出了激活金属的无电沉积的氧化物表面的解决方案。 溶液包含具有至少一个能够与氧化物表面形成化学键的官能团和至少一个能够与催化剂形成化学键的官能团的结合剂。 还存在使用该方法制造电子器件和电子器件的方法。
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