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公开(公告)号:KR20200126011A
公开(公告)日:2020-11-05
申请号:KR20207030669
申请日:2019-03-18
Applicant: LAM RES CORP
Inventor: YU JENGYI , TAN SAMANTHA SIAMHWA , VOLOSSKIY BORIS , KOLICS ARTUR , PAN YANG
IPC: H01L21/285 , C23C16/44 , H01L21/02 , H01L21/324 , H01L21/67
Abstract: 기판상에금속상호접속층을증착하는방법은프로세싱챔버의기판지지부상에기판을배치하는단계및 접착층, 확산배리어, 및시드층 중적어도하나로서기능하도록구성된중간층을기판상에증착하는단계를포함한다. 중간층을증착하는단계는금속-실리사이드 (M-Si) 결합을갖는제 1 재료를포함하는금속-유기전구체를공급하는것을포함한다. 방법은중간층 상에금속상호접속층을증착하는단계를더 포함한다.
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公开(公告)号:SG11202108851RA
公开(公告)日:2021-09-29
申请号:SG11202108851R
申请日:2021-01-11
Applicant: LAM RES CORP
Inventor: XUE JUN , MANUMPIL MARY ANNE , LI DA , TAN SAMANTHA S H , YU JENGYI
Abstract: This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.
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公开(公告)号:SG10201703480QA
公开(公告)日:2017-11-29
申请号:SG10201703480Q
申请日:2017-04-28
Applicant: LAM RES CORP
Inventor: TAN SAMANTHA , YU JENGYI , WISE RICHARD , SHAMMA NADER , PAN YANG
Abstract: Methods of and apparatuses for processing substrates having carbon-containing material using atomic layer etch and selective deposition are provided. Methods involve exposing a carbon-containing material on a substrate to an oxidant and igniting a first plasma to modify a surface of the substrate and exposing the modified surface to a second plasma at a bias power to remove the modified surface. Methods also involve selectively depositing a second carbon-containing material onto the substrate using a precursor having a chemical formula of CxHy, where x and y are integers greater than or equal to 1. ALE and selective deposition may be performed without breaking vacuum.
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