公开(公告)号：KR20200130743A

公开(公告)日：2020-11-19

申请号：KR20207031813

申请日：2019-04-04

Applicant: LAM RES CORP

Inventor： BREILING PATRICK G ,  ROBERTS MICHAEL PHILIP ,  BALDASSERONI CHLOE ,  KARIM ISHTAK ,  LAVOIE ADRIEN ,  CHANDRASEKHARAN RAMESH

IPC: H01L21/683 ,  B23Q3/15 ,  H01L21/67 ,  H02N13/00

Abstract: 페데스탈들을위한장치들및 시스템들이제공된다. 예시적인페데스탈은평면형이고, 바디의수직중심축에수직이고, 방사상두께를갖는상부환형시일표면, 상부환형시일표면으로부터오프셋된하부리세스표면, 및하부리세스표면으로부터돌출하는복수의 MCA들 (micro-contact areas) 로서, MCA 각각은하부리세스표면으로부터제 1 거리이하인제 2 거리만큼오프셋된상단표면을갖는, 복수의 MCA들및 바디내 하나이상의전극들을갖는바디를가질수도있다. 상부환형시일표면은반도체기판이페데스탈에의해지지될때 반도체기판의외측에지를지지하도록구성될수도있고, 상부환형시일표면및 MCA들의상단부들은반도체기판이페데스탈에의해지지될때 반도체기판을지지하도록구성될수도있다.

公开(公告)号：KR20200143494A

公开(公告)日：2020-12-23

申请号：KR20207035203

申请日：2019-05-03

Applicant: LAM RES CORP

Inventor： AGARWAL PULKIT ,  KUMAR PURUSHOTTAM ,  LAVOIE ADRIEN

IPC: H01L21/02 ,  C23C16/455 ,  H01J37/32 ,  H01L21/67

Abstract: 기판상에층을증착하기위한방법이제공된다. 복수의플라즈마원자층 증착 (Atomic Layer Deposition; ALD) 층들이기판위에증착되고, 복수의 ALD 층들의플라즈마 ALD 층각각은제 1 RF 전력으로증착된다. 제 1 RF 전력보다높은제 2 RF 전력을사용하여치밀화 (densifying) 플라즈마를생성하는단계를포함하여, 복수의플라즈마 ALD 층들이치밀화되고, 복수의플라즈마 ALD 층들중 적어도하나가치밀화된다.

公开(公告)号：KR20200127261A

公开(公告)日：2020-11-10

申请号：KR20207030667

申请日：2019-03-15

Applicant: LAM RES CORP

Inventor： LAVOIE ADRIEN

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/285 ,  H01L21/67

Abstract: 탄소막들은알루미늄-탄소결합을갖는알루미늄-함유반응물질 (예를들어, 트리알킬알루미늄) 과탄소-할로겐결합을갖는탄소-함유반응물질 (예를들어, 플루오로카본, 예컨대 CF4 또는 CH2F2) 간반응을사용하여원자층 증착에의해반도체기판들상에증착된다. 방법은프로세싱챔버로반응물질들을순차적으로도입하는단계, 반도체기판의표면상에반응물질들중 하나또는모두의흡착-제한된층을형성하는단계, 및흡착-제한된반응층에의해제한되는양으로탄소층을형성하도록탄소-함유반응물질과알루미늄-함유반응물질을반응시키는단계를수반한다. 알루미늄-함유부산물이프로세싱챔버로부터제거된다. 이러한탄소층들은갭충진적용예들, 예를들어 3D NAND 제조에서자기-정렬더블패터닝프로세스들에서스페이서들로서사용될수 있다.

公开(公告)号：SG11202111962QA

公开(公告)日：2021-11-29

申请号：SG11202111962Q

申请日：2019-07-03

Applicant: LAM RES CORP

Inventor： SOE CHAN MYAE MYAE ,  BALDASSERONI CHLOE ,  BHANDARI SHIVA SHARAN ,  AGARWAL PULKIT ,  LAVOIE ADRIEN ,  VAN SCHRAVENDIJK BART J

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/67

Abstract: Methods and apparatuses for depositing thin films using long and short conversion times during alternating cycles of atomic layer deposition (ALD) are provided herein. Embodiments involve alternating conversion duration of an ALD cycle in one or more cycles of a multi-cycle ALD process. Some embodiments involve modulation of dose, purge, pressure, plasma power or plasma energy in two or more ALD cycles.

公开(公告)号：SG10202012689YA

公开(公告)日：2021-01-28

申请号：SG10202012689Y

申请日：2017-06-12

Applicant: LAM RES CORP

Inventor： KARIM ISHTAK ,  LAVOIE ADRIEN

Abstract: Disclosed are methods of and systems for depositing a film. The methods may include: (a) determining process conditions, including a flow condition of a curtain gas that flows around the periphery of each station in the chamber, for performing film deposition in the chamber, (b) flowing the curtain gas to each station in the chamber during film deposition according to the process conditions determined in (a), (c) determining, during or after (b), an adjusted flow condition of the curtain gas in the chamber to improve substrate nonuniformity, and (d) flowing, after (c), the curtain gas during film deposition according to the adjusted flow condition determined in (c). The systems may include a gas delivery system, a processing chamber, and a controller having control logic for performing one or more of (a)-(d).

公开(公告)号：SG10202003055WA

公开(公告)日：2020-05-28

申请号：SG10202003055W

申请日：2016-09-26

Applicant: LAM RES CORP

Inventor： KUMAR PURUSHOTTAM ,  LAVOIE ADRIEN ,  QIAN JUN ,  KANG HU ,  KARIM ISHTAK ,  OU FUNG SUONG

Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.

公开(公告)号：SG10201705999TA

公开(公告)日：2018-02-27

申请号：SG10201705999T

申请日：2017-07-21

Applicant: LAM RES CORP

Inventor： SWAMINATHAN SHANKAR ,  PHILLIPS RICHARD ,  LAVOIE ADRIEN

Abstract: Methods and apparatuses for patterning substrates using a positive patterning scheme are described herein. Methods involve receiving a substrate having a patterned core material, depositing a doped spacer material conformally over the patterned core material, selectively etching the core material to the doped spacer material to form a spacer mask, and using the spacer mask to etch a target layer on the substrate. Spacer materials may be doped using any of boron, gallium, phosphorus, arsenic, aluminum, and hafnium. Embodiments are suitable for applications in multiple patterning applications.

公开(公告)号：SG10201704782VA

公开(公告)日：2018-01-30

申请号：SG10201704782V

申请日：2017-06-12

Applicant: LAM RES CORP

Inventor： KARIM ISHTAK ,  LAVOIE ADRIEN

Abstract: Disclosed are methods of and systems for depositing a film. The methods may include: (a) determining process conditions, including a flow condition of a curtain gas that flows around the periphery of each station in the chamber, for performing film deposition in the chamber, (b) flowing the curtain gas to each station in the chamber during film deposition according to the process conditions determined in (a), (c) determining, during or after (b), an adjusted flow condition of the curtain gas in the chamber to improve substrate nonuniformity, and (d) flowing, after (c), the curtain gas during film deposition according to the adjusted flow condition determined in (c). The systems may include a gas delivery system, a processing chamber, and a controller having control logic for performing one or more of (a)-(d).

公开(公告)号：SG10201604054PA

公开(公告)日：2016-12-29

申请号：SG10201604054P

申请日：2016-05-20

Applicant: LAM RES CORP

Inventor： CHANDRASEKHARAN RAMESH ,  SANGPLUNG SAANGRUT ,  SWAMINATHAN SHANKAR ,  PASQUALE FRANK L ,  KANG HU ,  LAVOIE ADRIEN ,  AUGUSTYNIAK EDWARD ,  SAKIYAMA YUKINORI ,  BALDASSERONI CHLOE ,  VARADARAJAN SESHASAYEE ,  SAJJAD BASHA ,  PETRAGLIA JENNIFER L

Abstract: A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers.

公开(公告)号：SG10201606551TA

公开(公告)日：2016-09-29

申请号：SG10201606551T

申请日：2015-02-13

Applicant: LAM RES CORP

Inventor： SWAMINATHAN SHANKAR ,  BANERJI ANANDA ,  SHANKAR NAGRAJ ,  LAVOIE ADRIEN

Abstract: Methods of depositing conformal aluminum nitride films on semiconductor substrates are provided. Disclosed methods involve (a) exposing a substrate to an aluminum-containing precursor, (b) purging the aluminum-containing precursor for a duration insufficient to remove substantially all of the aluminum-containing precursor in gas phase, (c) exposing the substrate to a nitrogen-containing precursor to form aluminum nitride, (d) purging the nitrogen-containing precursor, and (e) repeating (a) through (d). Increased growth rate and 100% step coverage and conformality are attained.