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    시일 표면을 갖는 정전 척
    1.
    发明公开
    시일 표면을 갖는 정전 척 审中-公开

    公开(公告)号：KR20200130743A

    公开(公告)日：2020-11-19

    申请号：KR20207031813

    申请日：2019-04-04

    Applicant: LAM RES CORP

    Inventor： BREILING PATRICK G ,  ROBERTS MICHAEL PHILIP ,  BALDASSERONI CHLOE ,  KARIM ISHTAK ,  LAVOIE ADRIEN ,  CHANDRASEKHARAN RAMESH

    IPC: H01L21/683 ,  B23Q3/15 ,  H01L21/67 ,  H02N13/00

    Abstract: 페데스탈들을위한장치들및 시스템들이제공된다. 예시적인페데스탈은평면형이고, 바디의수직중심축에수직이고, 방사상두께를갖는상부환형시일표면, 상부환형시일표면으로부터오프셋된하부리세스표면, 및하부리세스표면으로부터돌출하는복수의 MCA들 (micro-contact areas) 로서, MCA 각각은하부리세스표면으로부터제 1 거리이하인제 2 거리만큼오프셋된상단표면을갖는, 복수의 MCA들및 바디내 하나이상의전극들을갖는바디를가질수도있다. 상부환형시일표면은반도체기판이페데스탈에의해지지될때 반도체기판의외측에지를지지하도록구성될수도있고, 상부환형시일표면및 MCA들의상단부들은반도체기판이페데스탈에의해지지될때 반도체기판을지지하도록구성될수도있다.

    FILL ON DEMAND AMPOULE REFILL
    2.
    发明专利
    FILL ON DEMAND AMPOULE REFILL 未知

    公开(公告)号：SG10201910926YA

    公开(公告)日：2020-01-30

    申请号：SG10201910926Y

    申请日：2016-05-20

    Applicant: LAM RES CORP

    Inventor： NGUYEN TUAN ,  RANGANATHAN EASHWAR ,  SWAMINATHAN SHANKAR ,  LAVOIE ADRIEN ,  BALDASSERONI CHLOE ,  CHANDRASEKHARAN RAMESH ,  PASQUALE FRANK L ,  PETRAGLIA JENNIFER L

    Abstract: The invention relates to fill on demand ampoule refill. Methods and apparatus for use of a fill on demand ampoule are disclosed. The fill on demand ampoule may refill an ampoule with precursor concurrent with the performance of other deposition processes. The fill on demand may keep the level of precursor within the ampoule at a relatively constant level. The level may be calculated to result in an optimum head volume. The fill on demand may also keep the precursor at a temperature near that of an optimum precursor temperature. The fill on demand may occur during parts of the deposition process where the agitation of the precursor due to the filling of the ampoule with the precursor minimally effects the substrate deposition. Substrate throughput may be increased through the use of fill ondemand.

    FILL ON DEMAND AMPOULE
    7.
    发明专利
    FILL ON DEMAND AMPOULE 未知

    公开(公告)号：SG10201506630VA

    公开(公告)日：2016-03-30

    申请号：SG10201506630V

    申请日：2015-08-21

    Applicant: LAM RES CORP

    Inventor： NGUYEN TUAN ,  RANGANATHAN EASHWAR ,  SWAMINATHAN SHANKAR ,  LAVOIE ADRIEN ,  BALDASSERONI CHLOE ,  PASQUALE FRANK L ,  KUMAR PURUSHOTTAM ,  QIAN JUN ,  KANG HU

    Abstract: Methods and apparatus for use of a fill on demand ampoule are disclosed. The fill on demand ampoule may refill an ampoule with precursor concurrent with the performance of other deposition processes. The fill on demand may keep the level of precursor within the ampoule at a relatively constant level. The level may be calculated to result in an optimum head volume. The fill on demand may also keep the precursor at a temperature near that of an optimum precursor temperature. The fill on demand may occur during parts of the deposition process where the agitation of the precursor due to the filling of the ampoule with the precursor minimally effects the substrate deposition. Substrate throughput may be increased through the use of fill on demand.

    THICKNESS COMPENSATION BY MODULATION OF NUMBER OF DEPOSITION CYCLES AS A FUNCTION OF CHAMBER ACCUMULATION FOR WAFER TO WAFER FILM THICKNESS MATCHING
    8.
    发明专利
    THICKNESS COMPENSATION BY MODULATION OF NUMBER OF DEPOSITION CYCLES AS A FUNCTION OF CHAMBER ACCUMULATION FOR WAFER TO WAFER FILM THICKNESS MATCHING 未知

    公开(公告)号：SG11202002269QA

    公开(公告)日：2020-04-29

    申请号：SG11202002269Q

    申请日：2018-09-07

    Applicant: LAM RES CORP

    Inventor： PHILLIPS RICHARD ,  BALDASSERONI CHLOE ,  MANJUNATH NISHANTH

    IPC: C23C16/455 ,  H01L21/02 ,  H01L21/285 ,  H01L21/67

    Abstract: Methods and apparatuses for performing atomic layer deposition are provided. A method may include determining an amount of accumulated deposition material currently on an interior region of a deposition chamber interior, wherein the amount of accumulated deposition material changes over the course of processing a batch of substrates; applying the determined amount of accumulated deposition material to a relationship between a number of ALD cycles required to achieve a target deposition thickness, and a variable representing an amount of accumulated deposition material, wherein the applying returns a compensated number of ALD cycles for producing the target deposition thickness given the amount of accumulated deposition material currently on the interior region of the deposition chamber interior; and performing the compensated number of ALD cycles on one or more substrates in the batch.

    FILL ON DEMAND AMPOULE REFILL
    9.
    发明专利
    FILL ON DEMAND AMPOULE REFILL 未知

    公开(公告)号：SG10201604041SA

    公开(公告)日：2016-12-29

    申请号：SG10201604041S

    申请日：2016-05-20

    Applicant: LAM RES CORP

    Inventor： NGUYEN TUAN ,  RANGANATHAN EASHWAR ,  SWAMINATHAN SHANKAR ,  LAVOIE ADRIEN ,  BALDASSERONI CHLOE ,  CHANDRASEKHARAN RAMESH ,  PASQUALE FRANK L ,  PETRAGLIA JENNIFER L

    Abstract: The invention relates to fill on demand ampoule refill. Methods and apparatus for use of a fill on demand ampoule are disclosed. The fill on demand ampoule may refill an ampoule with precursor concurrent with the performance of other deposition processes. The fill on demand may keep the level of precursor within the ampoule at a relatively constant level. The level may be calculated to result in an optimum head volume. The fill on demand may also keep the precursor at a temperature near that of an optimum precursor temperature. The fill on demand may occur during parts of the deposition process where the agitation of the precursor due to the filling of the ampoule with the precursor minimally effects the substrate deposition. Substrate throughput may be increased through the use of fill ondemand.

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