公开(公告)号：SG10201705999TA

公开(公告)日：2018-02-27

申请号：SG10201705999T

申请日：2017-07-21

Applicant: LAM RES CORP

Inventor： SWAMINATHAN SHANKAR ,  PHILLIPS RICHARD ,  LAVOIE ADRIEN

Abstract: Methods and apparatuses for patterning substrates using a positive patterning scheme are described herein. Methods involve receiving a substrate having a patterned core material, depositing a doped spacer material conformally over the patterned core material, selectively etching the core material to the doped spacer material to form a spacer mask, and using the spacer mask to etch a target layer on the substrate. Spacer materials may be doped using any of boron, gallium, phosphorus, arsenic, aluminum, and hafnium. Embodiments are suitable for applications in multiple patterning applications.

公开(公告)号：SG10201604054PA

公开(公告)日：2016-12-29

申请号：SG10201604054P

申请日：2016-05-20

Applicant: LAM RES CORP

Inventor： CHANDRASEKHARAN RAMESH ,  SANGPLUNG SAANGRUT ,  SWAMINATHAN SHANKAR ,  PASQUALE FRANK L ,  KANG HU ,  LAVOIE ADRIEN ,  AUGUSTYNIAK EDWARD ,  SAKIYAMA YUKINORI ,  BALDASSERONI CHLOE ,  VARADARAJAN SESHASAYEE ,  SAJJAD BASHA ,  PETRAGLIA JENNIFER L

Abstract: A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers.

公开(公告)号：SG10201606551TA

公开(公告)日：2016-09-29

申请号：SG10201606551T

申请日：2015-02-13

Applicant: LAM RES CORP

Inventor： SWAMINATHAN SHANKAR ,  BANERJI ANANDA ,  SHANKAR NAGRAJ ,  LAVOIE ADRIEN

Abstract: Methods of depositing conformal aluminum nitride films on semiconductor substrates are provided. Disclosed methods involve (a) exposing a substrate to an aluminum-containing precursor, (b) purging the aluminum-containing precursor for a duration insufficient to remove substantially all of the aluminum-containing precursor in gas phase, (c) exposing the substrate to a nitrogen-containing precursor to form aluminum nitride, (d) purging the nitrogen-containing precursor, and (e) repeating (a) through (d). Increased growth rate and 100% step coverage and conformality are attained.

公开(公告)号：SG10201506630VA

公开(公告)日：2016-03-30

申请号：SG10201506630V

申请日：2015-08-21

Applicant: LAM RES CORP

Inventor： NGUYEN TUAN ,  RANGANATHAN EASHWAR ,  SWAMINATHAN SHANKAR ,  LAVOIE ADRIEN ,  BALDASSERONI CHLOE ,  PASQUALE FRANK L ,  KUMAR PURUSHOTTAM ,  QIAN JUN ,  KANG HU

Abstract: Methods and apparatus for use of a fill on demand ampoule are disclosed. The fill on demand ampoule may refill an ampoule with precursor concurrent with the performance of other deposition processes. The fill on demand may keep the level of precursor within the ampoule at a relatively constant level. The level may be calculated to result in an optimum head volume. The fill on demand may also keep the precursor at a temperature near that of an optimum precursor temperature. The fill on demand may occur during parts of the deposition process where the agitation of the precursor due to the filling of the ampoule with the precursor minimally effects the substrate deposition. Substrate throughput may be increased through the use of fill on demand.

公开(公告)号：SG10202102836YA

公开(公告)日：2021-04-29

申请号：SG10202102836Y

申请日：2016-05-20

Applicant: LAM RES CORP

Inventor： CHANDRASEKHARAN RAMESH ,  SANGPLUNG SAANGRUT ,  SWAMINATHAN SHANKAR ,  PASQUALE FRANK L ,  KANG HU ,  LAVOIE ADRIEN ,  AUGUSTYNIAK EDWARD ,  SAKIYAMA YUKINORI ,  BALDASSERONI CHLOE ,  VARADARAJAN SESHASAYEE ,  SAJJAD BASHA ,  PETRAGLIA JENNIFER L

Abstract: A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers.

公开(公告)号：SG10201510078QA

公开(公告)日：2016-07-28

申请号：SG10201510078Q

申请日：2015-12-08

Applicant: LAM RES CORP

Inventor： KUMAR PURUSHOTTAM ,  KANG HU ,  LAVOIE ADRIEN ,  CHIU YI CHUNG ,  PASQUALE FRANK L ,  QIAN JUN ,  BALDASSERONI CHLOE ,  SWAMINATHAN SHANKAR ,  LEESER KARL F ,  SMITH DAVID CHARLES ,  LAI WEI-CHIH

公开(公告)号：SG10201501155QA

公开(公告)日：2015-09-29

申请号：SG10201501155Q

申请日：2015-02-13

Applicant: LAM RES CORP

Inventor： SWAMINATHAN SHANKAR ,  PASQUALE FRANK L ,  LAVOIE ADRIEN

Abstract: The embodiments herein relate to methods and apparatus for depositing an encapsulation layer over memory stacks in MRAM and PCRAM applications. The encapsulation layer is a titanium dioxide (TiO2) layer deposited through an atomic layer deposition reaction. In some embodiments, the encapsulation layer may be deposited as a bilayer, with an electrically favorable layer formed atop a protective layer. In certain implementations, gaps between neighboring memory stacks may be filled with titanium oxide, for example through an atomic layer deposition reaction or a chemical vapor deposition reaction.

公开(公告)号：SG10201604041SA

公开(公告)日：2016-12-29

申请号：SG10201604041S

申请日：2016-05-20

Applicant: LAM RES CORP

Inventor： NGUYEN TUAN ,  RANGANATHAN EASHWAR ,  SWAMINATHAN SHANKAR ,  LAVOIE ADRIEN ,  BALDASSERONI CHLOE ,  CHANDRASEKHARAN RAMESH ,  PASQUALE FRANK L ,  PETRAGLIA JENNIFER L

Abstract: The invention relates to fill on demand ampoule refill. Methods and apparatus for use of a fill on demand ampoule are disclosed. The fill on demand ampoule may refill an ampoule with precursor concurrent with the performance of other deposition processes. The fill on demand may keep the level of precursor within the ampoule at a relatively constant level. The level may be calculated to result in an optimum head volume. The fill on demand may also keep the precursor at a temperature near that of an optimum precursor temperature. The fill on demand may occur during parts of the deposition process where the agitation of the precursor due to the filling of the ampoule with the precursor minimally effects the substrate deposition. Substrate throughput may be increased through the use of fill ondemand.

公开(公告)号：SG10201507987RA

公开(公告)日：2016-04-28

申请号：SG10201507987R

申请日：2015-09-25

Applicant: LAM RES CORP

Inventor： QIAN JUN ,  PASQUALE FRANK L ,  LAVOIE ADRIEN ,  BALDASSERONI CHLOE ,  KANG HU ,  SWAMINATHAN SHANKAR ,  KUMAR PURUSHOTTAM ,  FRANZEN PAUL ,  LE TRUNG T ,  NGUYEN TUAN ,  L PETRAGLIA JENNIFER ,  SMITH DAVID CHARLES ,  VARADARAJAN SESHASAYEE

Abstract: Methods for depositing film on substrates are provided. In these embodiments, the substrates are processed in batches. Due to changing conditions within a reaction chamber as additional substrates in the batch are processed, various film properties may trend over the course of a batch. The methods herein can be used to address the trending of film properties over the course of a batch. More specifically, film property trending is minimized by changing the amount of RF power used to process substrates over the course of the batch. Such methods are sometimes referred to as RF compensation methods.

公开(公告)号：SG10201910926YA

公开(公告)日：2020-01-30

申请号：SG10201910926Y

申请日：2016-05-20

Applicant: LAM RES CORP

Inventor： NGUYEN TUAN ,  RANGANATHAN EASHWAR ,  SWAMINATHAN SHANKAR ,  LAVOIE ADRIEN ,  BALDASSERONI CHLOE ,  CHANDRASEKHARAN RAMESH ,  PASQUALE FRANK L ,  PETRAGLIA JENNIFER L

Abstract: The invention relates to fill on demand ampoule refill. Methods and apparatus for use of a fill on demand ampoule are disclosed. The fill on demand ampoule may refill an ampoule with precursor concurrent with the performance of other deposition processes. The fill on demand may keep the level of precursor within the ampoule at a relatively constant level. The level may be calculated to result in an optimum head volume. The fill on demand may also keep the precursor at a temperature near that of an optimum precursor temperature. The fill on demand may occur during parts of the deposition process where the agitation of the precursor due to the filling of the ampoule with the precursor minimally effects the substrate deposition. Substrate throughput may be increased through the use of fill ondemand.