IN SITU PROTECTIVE COATING OF CHAMBER COMPONENTS FOR SEMICONDUCTOR PROCESSING

    公开(公告)号:SG11202103979UA

    公开(公告)日:2021-05-28

    申请号:SG11202103979U

    申请日:2019-10-08

    Applicant: LAM RES CORP

    Abstract: An in situ protective coating is deposited on surfaces of chamber components of a reaction chamber at high temperatures. The in situ protective coating may be deposited at a temperature greater than about 200° C. to provide a high quality coating that is resistant to certain types of halogen chemistries, such as fluorine-based species, chlorine-based species, bromine-based species, or iodine-based species. Subsequent coatings or layers may be deposited on the in situ protective coating having different etch selectivities than the underlying in situ protective coating. The in situ protective coating may be deposited throughout the reaction chamber to deposit on surfaces of the chamber components, including on chamber walls.

    CLOSED-LOOP MULTIPLE-OUTPUT RADIO FREQUENCY (RF) MATCHING

    公开(公告)号:SG11202111969RA

    公开(公告)日:2021-11-29

    申请号:SG11202111969R

    申请日:2020-04-30

    Applicant: LAM RES CORP

    Abstract: An apparatus and method for performing closed-loop multiple-output control of radio frequency (RF) matching for a semiconductor wafer fabrication process is provided. An apparatus for providing signals to a station of a process chamber performs semiconductor fabrication processes. A plurality of signal generators generates signals having first and second frequencies. A measurement circuit measures a voltage standing wave ratio (VSWR). A match reflection optimizer has a reactive component configured to be adjusted responsive to an output signal from the measurement circuit.

    ANOMALOUS PLASMA EVENT DETECTION AND MITIGATION IN SEMICONDUCTOR PROCESSING

    公开(公告)号:SG11202108726SA

    公开(公告)日:2021-09-29

    申请号:SG11202108726S

    申请日:2020-02-07

    Applicant: LAM RES CORP

    Abstract: In particular embodiments, anomalous plasma events, which may include formation of an electric arc in a semiconductor processing chamber, may be detected and mitigated. In certain embodiments, a method may include detecting an optical signal emitted by a plasma, converting the optical signal to a voltage signal, and forming an adjusted voltage signal. Responsive to determining that the changes associated with the adjusted voltage signal exceed a threshold, an output power of an RF signal coupled to the chamber may be adjusted. Such adjustment may mitigate formation of the anomalous plasma event occurring within the chamber.

    SHOWERHEAD FACEPLATE HAVING FLOW APERTURES CONFIGURED FOR HOLLOW CATHODE DISCHARGE SUPPRESSION

    公开(公告)号:SG11202103542WA

    公开(公告)日:2021-05-28

    申请号:SG11202103542W

    申请日:2019-10-01

    Applicant: LAM RES CORP

    Abstract: A faceplate of a showerhead has a bottom side that faces a plasma generation region and a top side that faces a plenum into which a process gas is supplied during operation of a substrate processing system. The faceplate includes apertures formed through the bottom side and openings formed through the top side. Each of the apertures is formed to extend through a portion of an overall thickness of the faceplate to intersect with at least one of the openings to form a corresponding flow path for process gas through the faceplate. Each of the apertures has a cross-section that has a hollow cathode discharge suppression dimension in at least one direction. Each of the openings has a cross-section that has a smallest cross-sectional dimension that is greater than the hollow cathode discharge suppression dimension.

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