公开(公告)号：SG11202112490QA

公开(公告)日：2021-12-30

申请号：SG11202112490Q

申请日：2020-05-15

Applicant: LAM RES CORP

Inventor： LIANG ANDREW ,  SHAMMA NADER ,  WISE RICH ,  SINGHAL AKHIL ,  MAHOROWALA ARPAN ,  BLACHUT GREGORY ,  AUSTIN DUSTIN

IPC: G03F7/20 ,  G03F7/11 ,  H01L21/027

Abstract: A method for patterning a substrate includes providing a substrate, and depositing a multi-layer stack including N layers on the substrate. N is an integer greater than one. The N layers include N mean free paths for secondary electrons, respectively. The method includes depositing a photoresist layer on the multi-layer stack, wherein the N mean free paths converge in the photoresist layer. Another method for patterning a substrate includes providing a substrate and depositing a layer on the substrate. The layer includes varying mean free paths for secondary electrons. The method includes depositing a photoresist layer on the layer. The varying mean free paths for secondary electrons converge in the photoresist layer.

公开(公告)号：SG11202103979UA

公开(公告)日：2021-05-28

申请号：SG11202103979U

申请日：2019-10-08

Applicant: LAM RES CORP

Inventor： SINGHAL AKHIL ,  SMITH DAVID CHARLES ,  LEESER KARL FREDERICK

IPC: H01L21/02

Abstract: An in situ protective coating is deposited on surfaces of chamber components of a reaction chamber at high temperatures. The in situ protective coating may be deposited at a temperature greater than about 200° C. to provide a high quality coating that is resistant to certain types of halogen chemistries, such as fluorine-based species, chlorine-based species, bromine-based species, or iodine-based species. Subsequent coatings or layers may be deposited on the in situ protective coating having different etch selectivities than the underlying in situ protective coating. The in situ protective coating may be deposited throughout the reaction chamber to deposit on surfaces of the chamber components, including on chamber walls.

公开(公告)号：SG11202013031PA

公开(公告)日：2021-01-28

申请号：SG11202013031P

申请日：2019-06-05

Applicant: LAM RES CORP

Inventor： SINGHAL AKHIL ,  VAN CLEEMPUT PATRICK

IPC: C23C16/455 ,  C23C16/04 ,  C23C16/40 ,  C23C16/458 ,  C23C16/505 ,  H01L21/02

Abstract: An Atomic Layer Deposition (ALD) configured to deposit a metal oxide layer onto an organic photoresist on a substrate using a highly reactive organic metal precursor. By using a highly reactive metal precursor, the rate of growth of the metal oxide layer is very fast, creating a “seal” that effectively protects the organic photoresist from loss and degradation from subsequent exposure to oxygen species during subsequent ALD cycles. The ability to deposit metal oxide layers means metal oxide spacers can be used in multi-patterning, resulting in highly uniform, dense lines, and the elimination of photolithography-etch steps.