公开(公告)号：SG10201507987RA

公开(公告)日：2016-04-28

申请号：SG10201507987R

申请日：2015-09-25

Applicant: LAM RES CORP

Inventor： QIAN JUN ,  PASQUALE FRANK L ,  LAVOIE ADRIEN ,  BALDASSERONI CHLOE ,  KANG HU ,  SWAMINATHAN SHANKAR ,  KUMAR PURUSHOTTAM ,  FRANZEN PAUL ,  LE TRUNG T ,  NGUYEN TUAN ,  L PETRAGLIA JENNIFER ,  SMITH DAVID CHARLES ,  VARADARAJAN SESHASAYEE

Abstract: Methods for depositing film on substrates are provided. In these embodiments, the substrates are processed in batches. Due to changing conditions within a reaction chamber as additional substrates in the batch are processed, various film properties may trend over the course of a batch. The methods herein can be used to address the trending of film properties over the course of a batch. More specifically, film property trending is minimized by changing the amount of RF power used to process substrates over the course of the batch. Such methods are sometimes referred to as RF compensation methods.

公开(公告)号：SG10201802228YA

公开(公告)日：2018-10-30

申请号：SG10201802228Y

申请日：2018-03-19

Applicant: LAM RES CORP

Inventor： SMITH DAVID CHARLES ,  HAUSMANN DENNIS M

Abstract: SELECTIVEGROWTH OF SILICON NITRIDE Methods and apparatuses for selectively depositing silicon nitride on silicon surfaces relative to silicon oxide surfaces and selectively depositing silicon nitride on silicon oxide surfaces relative to silicon surfaces are provided herein. Methods involve exposing the substrate to an alkene which is selectively reactive with the silicon surface to block the silicon surface by forming an organic moiety on the silicon surface prior to depositing silicon nitride selectively on silicon oxide surfaces using thermal atomic layer deposition. Methods involve exposing the substrate to an alkylsilylhalide which is selectively reactive with the silicon oxide surface to block the silicon oxide surface by forming an organic moiety on the silicon oxide surface prior to depositing silicon nitride selectively on silicon surfaces using thermal atomic layer deposition. Fig. 35

公开(公告)号：SG10201801141TA

公开(公告)日：2018-09-27

申请号：SG10201801141T

申请日：2018-02-09

Applicant: LAM RES CORP

Inventor： SMITH DAVID CHARLES ,  HAUSMANN DENNIS M

Abstract: an c·Yl·Hl",....1 o 3 30

公开(公告)号：SG10201510078QA

公开(公告)日：2016-07-28

申请号：SG10201510078Q

申请日：2015-12-08

Applicant: LAM RES CORP

Inventor： KUMAR PURUSHOTTAM ,  KANG HU ,  LAVOIE ADRIEN ,  CHIU YI CHUNG ,  PASQUALE FRANK L ,  QIAN JUN ,  BALDASSERONI CHLOE ,  SWAMINATHAN SHANKAR ,  LEESER KARL F ,  SMITH DAVID CHARLES ,  LAI WEI-CHIH

公开(公告)号：SG11202103979UA

公开(公告)日：2021-05-28

申请号：SG11202103979U

申请日：2019-10-08

Applicant: LAM RES CORP

Inventor： SINGHAL AKHIL ,  SMITH DAVID CHARLES ,  LEESER KARL FREDERICK

IPC: H01L21/02

Abstract: An in situ protective coating is deposited on surfaces of chamber components of a reaction chamber at high temperatures. The in situ protective coating may be deposited at a temperature greater than about 200° C. to provide a high quality coating that is resistant to certain types of halogen chemistries, such as fluorine-based species, chlorine-based species, bromine-based species, or iodine-based species. Subsequent coatings or layers may be deposited on the in situ protective coating having different etch selectivities than the underlying in situ protective coating. The in situ protective coating may be deposited throughout the reaction chamber to deposit on surfaces of the chamber components, including on chamber walls.

公开(公告)号：SG10201801817QA

公开(公告)日：2018-10-30

申请号：SG10201801817Q

申请日：2018-03-06

Applicant: LAM RES CORP

Inventor： SMITH DAVID CHARLES ,  HAUSMANN DENNIS M

Abstract: SELECTIVE DEPOSITION OF SILICON NITRIDE ON SILICON OXIDE USING CATALYTIC CONTROL Methods and apparatuses for selectively depositing silicon nitride on exposed silicon oxide surfaces of a substrate relative to exposed silicon surfaces are provided herein. Techniques involve providing trimethylaluminum to the substrate to form an aluminum-containing moiety on an exposed silicon oxide surface and selectively depositing silicon nitride on the surface using alternating pulses of an aminosilane and a hydrazine by thermal atomic layer deposition catalyzed by the aluminum-containing moiety on the exposed silicon oxide surface relative to an exposed silicon surface. Additional techniques involve providing a transition metal-containing gas to an exposed silicon oxide surface to form a transition metal-containing moiety that acts as a catalyst during thermal atomic layer deposition of silicon nitride using alternating pulses of an aminosilane and a hydrazine. Fig. 38

公开(公告)号：SG10201704783YA

公开(公告)日：2018-01-30

申请号：SG10201704783Y

申请日：2017-06-12

Applicant: LAM RES CORP

Inventor： SMITH DAVID CHARLES ,  WISE RICHARD ,  MAHOROWALA ARPAN ,  VAN CLEEMPUT PATRICK A ,  VAN SCHRAVENDIJK BART J

Abstract: Thin tin oxide films can be used in semiconductor device manufacturing. In one implementation, a method of processing a semiconductor substrate includes: providing a semiconductor substrate having a plurality of protruding features residing on an etch stop layer material, and an exposed tin oxide layer in contact with both the protruding features and the etch stop layer material, where the tin oxide layer covers both sidewalls and horizontal surfaces of the protruding features; and then completely removing the tin oxide layer from horizontal surfaces of the semiconductor substrate without completely removing the tin oxide layer residing at the sidewalls of the protruding features. Next, the protruding features can be removed without completely removing the tin oxide layer that resided at the sidewalls of the protruding features, thereby forming tin oxide spacers.

公开(公告)号：SG10202012976TA

公开(公告)日：2021-01-28

申请号：SG10202012976T

申请日：2017-06-12

Applicant: LAM RES CORP

Inventor： SMITH DAVID CHARLES ,  WISE RICHARD ,  MAHOROWALA ARPAN ,  VAN CLEEMPUT PATRICK A ,  VAN SCHRAVENDIJK BART J

Abstract: Thin tin oxide films can be used in semiconductor device manufacturing. In one implementation, a method of processing a semiconductor substrate includes: providing a semiconductor substrate having a plurality of protruding features residing on an etch stop layer material, and an exposed tin oxide layer in contact with both the protruding features and the etch stop layer material, where the tin oxide layer covers both sidewalls and horizontal surfaces of the protruding features; and then completely removing the tin oxide layer from horizontal surfaces of the semiconductor substrate without completely removing the tin oxide layer residing at the sidewalls of the protruding features. Next, the protruding features can be removed without completely removing the tin oxide layer that resided at the sidewalls of the protruding features, thereby forming tin oxide spacers.

公开(公告)号：SG10201800863VA

公开(公告)日：2018-11-29

申请号：SG10201800863V

申请日：2018-02-01

Applicant: LAM RES CORP

Inventor： REDDY KAPU SIRISH ,  RAINVILLE MELIHA GOZDE ,  SHANKAR NAGRAJ ,  HAUSMANN DENNIS M ,  SMITH DAVID CHARLES ,  SIVARAMAKRISHNAN KARTHIK ,  PORTER DAVID W

Abstract: SELECTIVEDEPOSITION WITH ATOMIC LAYER ETCH RESET Methods are provided for conducting a deposition on a semiconductor substrate by selectively depositing a material on the substrate. The substrate has a plurality of substrate materials, each with a different nucleation delay corresponding to the material deposited thereon. Specifically, the nucleation delay associated with a first substrate material on which deposition is intended is less than the nucleation delay associated with a second substrate material on which deposition is not intended according to a nucleation delay differential, which degrades as deposition proceeds. A portion of the deposited material is etched to reestablish the nucleation delay differential between the first and the second substrate materials. The material is further selectively deposited on the substrate. Fig. 47