PARASITIC PLASMA PREVENTION IN PLASMA PROCESSING CHAMBERS

    公开(公告)号:SG187142A1

    公开(公告)日:2013-02-28

    申请号:SG2013004346

    申请日:2011-07-18

    Applicant: LAM RES CORP

    Abstract: Parasitic plasma in voids in a component of a plasma processing chamber can be eliminated by covering electrically conductive surfaces in an interior of the voids with a sleeve. The voids can be gas holes, lift pin holes, helium passages, conduits and/or plenums in chamber components such as an upper electrode and a substrate support.

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