METHODS AND ARRANGEMENT FOR PLASMA DECHUCK OPTIMIZATION BASED ON COUPLING OF PLASMA SIGNALING TO SUBSTRATE POSITION AND POTENTIAL
    1.
    发明申请
    METHODS AND ARRANGEMENT FOR PLASMA DECHUCK OPTIMIZATION BASED ON COUPLING OF PLASMA SIGNALING TO SUBSTRATE POSITION AND POTENTIAL 审中-公开
    基于等离子体信号耦合到基底位置和潜力的等离子体去离子优化的方法和装置

    公开(公告)号:WO2011031590A3

    公开(公告)日:2011-06-30

    申请号:PCT/US2010047382

    申请日:2010-08-31

    CPC classification number: H01L21/6833 H01J37/32091 H01J37/32935

    Abstract: A method for optimizing a dechuck sequence, which includes removing a substrate from a lower electrode. The method includes performing an initial analysis to determine if a first set of electrical characteristic data of a plasma formed during the dechuck sequence traverses a threshold values. If so, turning off the inert gas. The method also includes raising the lifter pins slightly from the lower electrode to move the substrate in an upward direction. The method further includes performing a mechanical and electrical analysis, which includes comparing a first set of mechanical data, which includes an amount of force exerted by the lifter pins, against a threshold value. The mechanical and electrical analysis also includes comparing a second set of electrical characteristic data against a threshold value. If both traverse the respective threshold value, removes the substrate from the lower electrode since a substrate-released event has occurred.

    Abstract translation: 一种用于优化解扣序列的方法,其包括从下电极去除衬底。 该方法包括执行初始分析以确定在解扣序列期间形成的等离子体的第一组电特性数据是否穿过阈值。 如果是这样,关闭惰性气体。 该方法还包括从下电极稍微升高升降器销,以向上移动基板。 该方法还包括执行机械和电气分析,其包括将包括提升器引脚施加的力的第一组机械数据与阈值进行比较。 机械和电气分析还包括将第二组电特性数据与阈值进行比较。 如果两者都穿过相应的阈值,则由于发生了衬底释放事件而从底部电极去除衬底。

    SYSTEM AND METHOD FOR TESTING AN ELECTROSTATIC CHUCK
    2.
    发明申请
    SYSTEM AND METHOD FOR TESTING AN ELECTROSTATIC CHUCK 审中-公开
    用于测试静电卡盘的系统和方法

    公开(公告)号:WO2010042908A2

    公开(公告)日:2010-04-15

    申请号:PCT/US2009060290

    申请日:2009-10-10

    CPC classification number: H01L21/6833

    Abstract: The present invention provides a reliable, non-invasive, electrical test method for predicting satisfactory performance of electrostatic chucks (ESCs). In accordance with an aspect of the present invention, a parameter, e.g., impedance, of an ESC is measured over a frequency band to generate a parameter functions. This parameter function may be used to establish predetermined acceptable limits of the parameter within the frequency band.

    Abstract translation: 本发明提供了用于预测静电卡盘(ESC)的令人满意的性能的可靠的非侵入式电测试方法。 根据本发明的一个方面,在频带上测量ESC的参数,例如阻抗,以产生参数功能。 该参数功能可用于建立频带内参数的预定可接受极限。

    APPARATUS AND METHOD FOR TEMPERATURE CONTROL OF A SEMICONDUCTOR SUBSTRATE SUPPORT
    4.
    发明申请
    APPARATUS AND METHOD FOR TEMPERATURE CONTROL OF A SEMICONDUCTOR SUBSTRATE SUPPORT 审中-公开
    半导体基板支持温度控制的装置和方法

    公开(公告)号:WO2011149508A3

    公开(公告)日:2012-04-05

    申请号:PCT/US2011000867

    申请日:2011-05-17

    Abstract: A recirculation system of a substrate support on which a semiconductor substrate is subjected to a multistep process in a vacuum chamber, the system comprising a substrate support having at least one liquid flow passage in a base plate thereof, an inlet and an outlet in fluid communication with the flow passage, a supply line in fluid communication with the inlet, and a return line in fluid communication with the outlet; a first recirculator providing liquid at temperature T 1 in fluid communication with the supply line and the return line; a second recirculator providing liquid at temperature T 2 in fluid communication with the supply line and the return line, temperature T 2 being at least 10°C above temperature T 1 ; a pre-cooling unit providing liquid at temperature T pc connected to the inlet and the outlet, temperature T pc being at least 10C below T 1 ; a pre-heating unit providing liquid at temperature T ph connected to the inlet and the outlet, temperature T ph being at least 10°C above T 2 ; a controller operable to selectively operate valves of the recirculation system to recirculate liquid between the flow passage and the first recirculator, the second recirculator, the pre-cooling unit or the pre-heating unit.

    Abstract translation: 一种衬底支撑件的再循环系统,半导体衬底在其上在真空室中进行多步骤处理,所述系统包括衬底支撑件,所述衬底支撑件在其底板中具有至少一个液体流动通道,流体连通的入口和出口 与流路连通,与入口流体连通的供应管线和与出口流体连通的回流管线; 第一再循环器,其在与所述供应管线和所述回流管线流体连通的温度T 1下提供液体; 提供温度T 2的液体与供应管线和返回管线流体连通的第二再循环器,温度T 2高于温度T 1至少10℃; 提供温度T pc连接到入口和出口的液体的预冷单元,温度T pc比T 1低至少10℃; 预热单元,其在与入口和出口连接的温度T ph下提供液体,温度T ph比T 2高至少10℃; 控制器,其可操作以选择性地操作所述再循环系统的阀,以在所述流动通道和所述第一再循环器,所述第二再循环器,所述预冷单元或所述预热单元之间再循环液体。

    LIGHT-UP PREVENTION IN ELECTROSTATIC CHUCKS
    5.
    发明申请
    LIGHT-UP PREVENTION IN ELECTROSTATIC CHUCKS 审中-公开
    防静电保护灯防护

    公开(公告)号:WO2011014328A3

    公开(公告)日:2011-05-05

    申请号:PCT/US2010040284

    申请日:2010-06-29

    Abstract: An electrostatic chuck assembly is provided comprising a ceramic contact layer, a patterned bonding layer, an electrically conductive base plate, and a subterranean arc mitigation layer. The ceramic contact layer and the electrically conductive base plate cooperate to define a plurality of hybrid gas distribution channels formed in a subterranean portion of the electrostatic chuck assembly. Individual ones of the hybrid gas distribution channels comprise surfaces of relatively high electrical conductivity presented by the electrically conductive base plate and relatively low electrical conductivity presented by the ceramic contact layer. The subterranean arc mitigation layer comprises a layer of relatively low electrical conductivity and is formed over the relatively high conductivity surfaces of the hybrid gas distribution channels in the subterranean portion of the electrostatic chuck assembly. Semiconductor wafer processing chambers are also provided.

    Abstract translation: 提供一种静电卡盘组件,其包括陶瓷接触层,图案化结合层,导电基板和地下电弧缓解层。 陶瓷接触层和导电基板协作以形成在静电卡盘组件的地下部分中形成的多个混合气体分配通道。 混合气体分配通道中的各个包括由导电基板呈现的相对高的导电性的表面和由陶瓷接触层呈现的相对低的电导率。 地下电弧缓解层包括相对较低电导率的层,并且形成在静电卡盘组件的地下部分中的混合气体分配通道的较高电导率表面上。 还提供了半导体晶片处理室。

    SHOWERHEAD ELECTRODE ASSEMBLIES FOR PLASMA PROCESSING APPARATUSES
    6.
    发明申请
    SHOWERHEAD ELECTRODE ASSEMBLIES FOR PLASMA PROCESSING APPARATUSES 审中-公开
    用于等离子体加工设备的淋浴电极组件

    公开(公告)号:WO2008156562A2

    公开(公告)日:2008-12-24

    申请号:PCT/US2008007089

    申请日:2008-06-05

    Abstract: Showerhead electrode assemblies are disclosed, which include a showerhead electrode adapted to be mounted in an interior of a vacuum chamber; an optional backing plate attached to the showerhead electrode; a thermal control plate attached to the backing plate or to the showerhead electrode at multiple contact points across the backing plate; and at least one thermally and electrically conductive gasket separating the backing plate and the thermal control plate, or the backing plate and showerhead electrode, at the contact points. Methods of processing semiconductor substrates using the showerhead electrode assemblies are also disclosed.

    Abstract translation: 公开了一种喷头电极组件,其包括适于安装在真空室内部的喷头电极; 连接到喷头电极的可选背板; 热控制板,在穿过背板的多个接触点处附接到背板或喷头电极; 以及在接触点处分离背板和热控制板,或背板和喷头电极的至少一个导热和导电的衬垫。 还公开了使用喷头电极组件处理半导体衬底的方法。

    METHODS AND ARRANGEMENT FOR PLASMA DECHUCK OPTIMIZATION BASED ON COUPLING OF PLASMA SIGNALING TO SUBSTRATE POSITION AND POTENTIAL

    公开(公告)号:SG178372A1

    公开(公告)日:2012-03-29

    申请号:SG2012009627

    申请日:2010-08-31

    Applicant: LAM RES CORP

    Abstract: A method for optimizing a dechuck sequence, which includes removing a substrate from a lower electrode. The method includes performing an initial analysis to determine if a first set of electrical characteristic data of a plasma formed during the dechuck sequence traverses a threshold values. If so, turning off the inert gas. The method also includes raising the lifter pins slightly from the lower electrode to move the substrate in an upward direction. The method further includes performing a mechanical and electrical analysis, which includes comparing a first set of mechanical data, which includes an amount of force exerted by the lifter pins, against a threshold value. The mechanical and electrical analysis also includes comparing a second set of electrical characteristic data against a threshold value. If both traverse the respective threshold value, removes the substrate from the lower electrode since a substrate-released event has occurred.

    LIGHT-UP PREVENTION IN ELECTROSTATIC CHUCKS

    公开(公告)号:SG177584A1

    公开(公告)日:2012-02-28

    申请号:SG2012001616

    申请日:2010-06-29

    Applicant: LAM RES CORP

    Abstract: An electrostatic chuck assembly is provided comprising a ceramic contact layer, a patterned bonding layer, an electrically conductive base plate, and a subterranean arc mitigation layer. The ceramic contact layer and the electrically conductive base plate cooperate to define a plurality of hybrid gas distribution channels formed in a subterranean portion of the electrostatic chuck assembly. Individual ones of the hybrid gas distribution channels comprise surfaces of relatively high electrical conductivity presented by the electrically conductive base plate and relatively low electrical conductivity presented by the ceramic contact layer. The subterranean arc mitigation layer comprises a layer of relatively low electrical conductivity and is formed over the relatively high conductivity surfaces of the hybrid gas distribution channels in the subterranean portion of the electrostatic chuck assembly. Semiconductor wafer processing chambers are also provided.

    SHOWERHEAD ELECTRODE ASSEMBLIES FOR PLASMA PROCESSING APPARATUSES

    公开(公告)号:SG182197A1

    公开(公告)日:2012-07-30

    申请号:SG2012043410

    申请日:2008-06-05

    Applicant: LAM RES CORP

    Abstract: Showerhead electrode assemblies are disclosed, which include a showerhead electrode adapted to be mounted in an interior of a vacuum chamber; an optional backing plate attached to the showerhead electrode; a thermal control plate attached to the backing plate or to the showerhead electrode at multiple contact points across the backing plate; and at least one thermally and electrically conductive gasket separating the backing plate and the thermal control plate, or the backing plate and showerhead electrode, at the contact points. Methods of processing semiconductor substrates using the showerhead electrode assemblies are also disclosed.Figure 3

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