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    APPARATUS AND METHOD FOR TEMPERATURE CONTROL OF A SEMICONDUCTOR SUBSTRATE SUPPORT
    1.
    发明申请
    APPARATUS AND METHOD FOR TEMPERATURE CONTROL OF A SEMICONDUCTOR SUBSTRATE SUPPORT 审中-公开
    半导体基板支持温度控制的装置和方法

    公开(公告)号：WO2011149508A3

    公开(公告)日：2012-04-05

    申请号：PCT/US2011000867

    申请日：2011-05-17

    Applicant: LAM RES CORP ,  RICCI ANTHONY ,  ULLAL SAURABH ,  KANG MICHAEL ,  BUSCHE MATTHEW

    Inventor： RICCI ANTHONY ,  ULLAL SAURABH ,  KANG MICHAEL ,  BUSCHE MATTHEW

    IPC: H01L21/683 ,  H01L21/205 ,  H01L21/3065

    CPC classification number: H01L21/67248 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/67109

    Abstract: A recirculation system of a substrate support on which a semiconductor substrate is subjected to a multistep process in a vacuum chamber, the system comprising a substrate support having at least one liquid flow passage in a base plate thereof, an inlet and an outlet in fluid communication with the flow passage, a supply line in fluid communication with the inlet, and a return line in fluid communication with the outlet; a first recirculator providing liquid at temperature T 1 in fluid communication with the supply line and the return line; a second recirculator providing liquid at temperature T 2 in fluid communication with the supply line and the return line, temperature T 2 being at least 10°C above temperature T 1 ; a pre-cooling unit providing liquid at temperature T pc connected to the inlet and the outlet, temperature T pc being at least 10C below T 1 ; a pre-heating unit providing liquid at temperature T ph connected to the inlet and the outlet, temperature T ph being at least 10°C above T 2 ; a controller operable to selectively operate valves of the recirculation system to recirculate liquid between the flow passage and the first recirculator, the second recirculator, the pre-cooling unit or the pre-heating unit.

    Abstract translation: 一种衬底支撑件的再循环系统，半导体衬底在其上在真空室中进行多步骤处理，所述系统包括衬底支撑件，所述衬底支撑件在其底板中具有至少一个液体流动通道，流体连通的入口和出口 与流路连通，与入口流体连通的供应管线和与出口流体连通的回流管线; 第一再循环器，其在与所述供应管线和所述回流管线流体连通的温度T 1下提供液体; 提供温度T 2的液体与供应管线和返回管线流体连通的第二再循环器，温度T 2高于温度T 1至少10℃; 提供温度T pc连接到入口和出口的液体的预冷单元，温度T pc比T 1低至少10℃; 预热单元，其在与入口和出口连接的温度T ph下提供液体，温度T ph比T 2高至少10℃; 控制器，其可操作以选择性地操作所述再循环系统的阀，以在所述流动通道和所述第一再循环器，所述第二再循环器，所述预冷单元或所述预热单元之间再循环液体。

    THERMAL PLATE WITH PLANAR THERMAL ZONES FOR SEMICONDUCTOR PROCESSING
    3.
    发明申请
    THERMAL PLATE WITH PLANAR THERMAL ZONES FOR SEMICONDUCTOR PROCESSING 审中-公开
    具有用于半导体加工的平面热区的热板

    公开(公告)号：WO2013042027A3

    公开(公告)日：2015-06-25

    申请号：PCT/IB2012054903

    申请日：2012-09-17

    Applicant: LAM RES CORP ,  LAM RES AG ,  GAFF KEITH WILLIAM ,  COMENDANT KEITH ,  RICCI ANTHONY

    Inventor： GAFF KEITH WILLIAM ,  COMENDANT KEITH ,  RICCI ANTHONY

    IPC: H01L21/30 ,  H01C17/02 ,  H05B3/68

    CPC classification number: F25B21/04 ,  H01L21/0201 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L35/34 ,  Y10T29/49083 ,  Y10T29/49165

    Abstract: A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated includes an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias.

    Abstract translation: 一种用于半导体等离子体处理装置中的衬底支撑组件的热板，包括以可伸缩复用布局布置的多个可独立控制的平面热区，以及用于独立地控制和供电平面加热器区的电子装置。 每个平面热区使用至少一个珀耳帖装置作为热电元件。 其中结合热板的基板支撑组件包括静电夹持电极层和温度控制的基板。 用于制造热板的方法包括将具有平面热区域，正，负和公共线路和通孔的陶瓷或聚合物片材结合在一起。

    METHOD OF PROTECTING A BOND LAYER IN A SUBSTRATE SUPPORT ADAPTED FOR USE IN A PLASMA PROCESSING SYSTEM
    5.
    发明申请
    METHOD OF PROTECTING A BOND LAYER IN A SUBSTRATE SUPPORT ADAPTED FOR USE IN A PLASMA PROCESSING SYSTEM 审中-公开
    保护基板中的粘合层的方法，适用于等离子体处理系统

    公开(公告)号：WO2007011613A3

    公开(公告)日：2007-11-01

    申请号：PCT/US2006027090

    申请日：2006-07-13

    Applicant: LAM RES CORP ,  RICCI ANTHONY ,  TAPPAN JIM ,  COMENDANT KEITH

    Inventor： RICCI ANTHONY ,  TAPPAN JIM ,  COMENDANT KEITH

    IPC: B23K31/02 ,  B65B53/00 ,  C23C16/00 ,  F16B4/00 ,  H01L21/306

    CPC classification number: H01L21/76251 ,  H01L21/68757 ,  H01L21/68785

    Abstract: A method of protecting a bond layer in a substrate support adapted for use in a plasma processing system. The method includes the steps of attaching an upper member of a substrate support to a lower member of a substrate support with a bonding material. An adhesive is applied to an outer periphery of the upper member and to an upper periphery of the lower member, and a protective ring is positioned around the outer periphery of the upper member and the upper periphery of the lower member. The protective ring is originally fabricated with dimensions that provide mechanical stability and workability. The protective ring is then machined to an exact set of final dimensions consistent with the design of the substrate support application.

    Abstract translation: 一种保护适合在等离子体处理系统中使用的衬底支撑件中的结合层的方法。 该方法包括以下步骤：用接合材料将衬底支撑件的上部件附接到衬底支撑件的下部件。 在上部件的外周和下部件的上部周边上施加粘合剂，并且在上部件的外周和下部件的上部周边上设置保护环。 保护环最初制造时尺寸能够提供机械稳定性和可操作性。 然后将保护环机械加工成与衬底支撑应用的设计一致的精确的一组最终尺寸。

    PARASITIC PLASMA PREVENTION IN PLASMA PROCESSING CHAMBERS
    10.
    发明专利
    PARASITIC PLASMA PREVENTION IN PLASMA PROCESSING CHAMBERS 未知

    公开(公告)号：SG187142A1

    公开(公告)日：2013-02-28

    申请号：SG2013004346

    申请日：2011-07-18

    Applicant: LAM RES CORP

    Inventor： RICCI ANTHONY ,  ULLAL SAURABH ,  MARTINEZ LARRY

    Abstract: Parasitic plasma in voids in a component of a plasma processing chamber can be eliminated by covering electrically conductive surfaces in an interior of the voids with a sleeve. The voids can be gas holes, lift pin holes, helium passages, conduits and/or plenums in chamber components such as an upper electrode and a substrate support.

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