公开(公告)号：WO0059009A3

公开(公告)日：2001-03-01

申请号：PCT/US0008514

申请日：2000-03-30

Applicant: LAM RES CORP

Inventor： NI TUQUIANG ,  COLLISON WENLI

IPC: H01L21/302 ,  G01B11/00 ,  G02B7/00 ,  H01L21/00 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31

CPC classification number: G01N21/15

Abstract: An apparatus is provided including a semiconductor processing chamber enclosed by a plurality of walls. Also included is a source of process gas that is required for processing a wafer within the processing chamber. Mounted on one of the walls of the processing chamber is a window. An inlet is positioned adjacent to the window and remains in communication with the processing chamber. The inlet is further coupled to the source of process gas to channel the process gas into the chamber for both preventing the deposition of byproducts on the window and further processing the wafer within the processing chamber.

Abstract translation: 提供了包括由多个壁包围的半导体处理室的装置。 还包括处理处理室内的晶片所需的工艺气体源。 安装在处理室的一个壁上的是一个窗口。 入口邻近窗口定位并保持与处理室连通。 入口还进一步耦合到处理气体源，以将工艺气体引导到室中，以防止在窗口上沉积副产物，并进一步处理处理室内的晶片。

公开(公告)号：AU2282301A

公开(公告)日：2001-07-09

申请号：AU2282301

申请日：2000-12-19

Applicant: LAM RES CORP

Inventor： NI TUQUIANG ,  COLLISON WENLI

IPC: G03F7/42 ,  H01L21/00 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/306

公开(公告)号：AU5492800A

公开(公告)日：2001-01-31

申请号：AU5492800

申请日：2000-06-14

Applicant: LAM RES CORP

Inventor： NI TUQUIANG ,  TRAN NANCY

IPC: H01L21/311

Abstract: A method for etching a carbon-doped Organic Silicate Glass (OSG) insulating layer on a semiconductor device, as disclosed herein, includes introducing into a processing chamber a substrate with a carbon-doped OSG insulating layer and an overlying mask layer having an aperture. A plasma is then developed within the chamber from an oxidizing gas and a high selectivity gas. The high selectivity gas is preferably either a bromine containing gases, or a chlorine containing gases, or both. The ratio of oxidizing gas to high selectivity gas is preferably no less than 4:1. In addition, an inert carrier gas may be also provided. The plasma is then used to etch the organic silicate glass insulating layer through the mask layer, thereby forming a via in the organic silicate glass insulating layer wherein an underlying silicon nitride barrier layer remains essentially intact.

公开(公告)号：DE60037805T2

公开(公告)日：2009-01-02

申请号：DE60037805

申请日：2000-03-30

Applicant: LAM RES CORP

Inventor： NI TUQUIANG ,  COLLISON WENLI

IPC: H01L21/00 ,  H01L21/302 ,  G01B11/00 ,  G02B7/00 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31

Abstract: An apparatus is provided including a semiconductor processing chamber enclosed by a plurality of walls. Also included is a source of process gas that is required for processing a wafer within the processing chamber. Mounted on one of the walls of the processing chamber is a window. An inlet is positioned adjacent to the window and remains in communication with the processing chamber. The inlet is further coupled to the source of process gas to channel the process gas into the processing chamber for both preventing the deposition of byproducts on the window and further processing the wafer within the processing chamber. In another embodiment, a source of light, an analysis mechanism, and an optical transmission medium are provided. Such optical transmission medium is coupled between the source of light and the analysis mechanism and is further aligned with the window for directing light into the processing chamber and analyzing the wafer within the processing chamber. The window is configured to reflect the light received from the optical transmission medium at an angle so as to not interfere with light reflected from the wafer within the processing chamber.

公开(公告)号：DE60037805D1

公开(公告)日：2008-03-06

申请号：DE60037805

申请日：2000-03-30

Applicant: LAM RES CORP

Inventor： NI TUQUIANG ,  COLLISON WENLI

IPC: H01L21/00 ,  H01L21/302 ,  G01B11/00 ,  G02B7/00 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31

Abstract: An apparatus is provided including a semiconductor processing chamber enclosed by a plurality of walls. Also included is a source of process gas that is required for processing a wafer within the processing chamber. Mounted on one of the walls of the processing chamber is a window. An inlet is positioned adjacent to the window and remains in communication with the processing chamber. The inlet is further coupled to the source of process gas to channel the process gas into the processing chamber for both preventing the deposition of byproducts on the window and further processing the wafer within the processing chamber. In another embodiment, a source of light, an analysis mechanism, and an optical transmission medium are provided. Such optical transmission medium is coupled between the source of light and the analysis mechanism and is further aligned with the window for directing light into the processing chamber and analyzing the wafer within the processing chamber. The window is configured to reflect the light received from the optical transmission medium at an angle so as to not interfere with light reflected from the wafer within the processing chamber.