公开(公告)号：AU5492800A

公开(公告)日：2001-01-31

申请号：AU5492800

申请日：2000-06-14

Applicant: LAM RES CORP

Inventor： NI TUQUIANG ,  TRAN NANCY

IPC: H01L21/311

Abstract: A method for etching a carbon-doped Organic Silicate Glass (OSG) insulating layer on a semiconductor device, as disclosed herein, includes introducing into a processing chamber a substrate with a carbon-doped OSG insulating layer and an overlying mask layer having an aperture. A plasma is then developed within the chamber from an oxidizing gas and a high selectivity gas. The high selectivity gas is preferably either a bromine containing gases, or a chlorine containing gases, or both. The ratio of oxidizing gas to high selectivity gas is preferably no less than 4:1. In addition, an inert carrier gas may be also provided. The plasma is then used to etch the organic silicate glass insulating layer through the mask layer, thereby forming a via in the organic silicate glass insulating layer wherein an underlying silicon nitride barrier layer remains essentially intact.

公开(公告)号：AU5492900A

公开(公告)日：2001-01-31

申请号：AU5492900

申请日：2000-06-14

Applicant: LAM RES CORP

Inventor： NI TUQIANG ,  TRAN NANCY

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768

Abstract: A robust method for etching an organic low-k insulating layer on a semiconductor device, as disclosed herein, includes introducing into a processing chamber a substrate with an organic insulating layer and an overlying mask layer having an aperture. A plasma is then developed within the chamber from an oxidizing gas and a passivation gas. The passivation gas is preferably either a silicon containing gas or a boron containing gas, or both. The ratio of the oxidizing gas to the passivation gas is preferably at least 10:1. In addition, an inert carrier gas may be provided. The plasma is then used to etch the organic insulating layer through the mask layer, thereby forming a via having essentially vertical sidewalls in the organic low-k insulating layer.